Abstract：A novel lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure,using an effective concept of dual Polysilicon material gate,is proposed.The conventional polysilicon gate applied in LDMOSFET is divided into S-gate and D-gate by gate engineering.The special gate structure can improve driveability,suppress SCEs(short channel effects) and screen DIBL(drain-induced barrier lowering).The threshold voltage model is solved by two dimensional (2D) Poisson’s equation.The difference of workfunction and doping concentration distribution are also taken into account in the surface potential function.The results predicted by the model are compared with those obtained by 2D simulating to verify the accuracy of the proposed analytical model.
代月花;高 珊;柯导明;陈军宁. 基于二维电势分布的一种新型复合多晶硅栅 LDMOS阈值电压模型[J]. 电子学报, 2007, 35(5): 844-848.
DAI Yue-hua;GAO Shan;KE Dao-ming;CHEN Jun-ning. Threshold Voltage Model of a Novel Dual Polysilicon Material Gate LDMOS Based on Two Dimensional Potential Distribution. Chinese Journal of Electronics, 2007, 35(5): 844-848.
2007, Vol. 35 
