Research on Coarse/Fine Read Algorithm Based on a NAND Flash Page Buffer Design
CHEN Ke1,2, DU Zhi-chao2,3, YE Song1, WANG Qi2,3, HUO Zong-liang2,3
1. College of Communication Engineering, Chengdu University of Information Technology, Sichuan, chengdu 610225, China;
2. Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
3. School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China
Abstract：To reduce the effect of the common source line noise in read operation of NAND Flash Memory,a page buffer circuit which can realize the coarse/fine read operation is proposed and a C/F read algorithm suitable for the page buffer circuit is introduced and implemented which can reduce the common source line noise significantly.There are two sub-read operations in the algorithm,the purpose of the first sub-read operation is to distinguish the cells with lower threshold voltage and mark them in page buffer circuit.These cells are no longer sensed in the second sub-read operation.As a result,the threshold voltage shift caused by the common source line noise is suppressed.The circuit simulation results show that the page buffer structure which supports the C/F read algorithm can reduce the shift of the threshold distribution more than 495.6mV and the read accuracy of NAND Flash Memory is greatly improved.
陈珂, 杜智超, 叶松, 王颀, 霍宗亮. 基于一种NAND闪存页缓存器设计的C/F读取算法研究[J]. 电子学报, 2018, 46(11): 2619-2625.
CHEN Ke, DU Zhi-chao, YE Song, WANG Qi, HUO Zong-liang. Research on Coarse/Fine Read Algorithm Based on a NAND Flash Page Buffer Design. Acta Electronica Sinica, 2018, 46(11): 2619-2625.
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2018, Vol. 46 
