电子学报 ›› 2021, Vol. 49 ›› Issue (2): 394-400.DOI: 10.12263/DZXB.20200530

• 科研通信 • 上一篇    下一篇

32nm CMOS工艺三点翻转自恢复锁存器设计

黄正峰1, 潘尚杰1, 曹剑飞1, 宋钛1, 欧阳一鸣2, 梁华国1, 倪天明3, 鲁迎春1   

  1. 1. 合肥工业大学电子科学与应用物理学院, 安徽合肥 230601;
    2. 合肥工业大学计算机与信息学院, 安徽合肥 230601;
    3. 安徽工程大学电气工程学院, 安徽芜湖 241000
  • 收稿日期:2020-06-02 修回日期:2020-09-27 出版日期:2021-02-25 发布日期:2020-10-22
  • 通讯作者: 鲁迎春
  • 作者简介:黄正峰 男,1978年2月出生,安徽无为人.2009年获合肥工业大学计算机应用技术专业工学博士学位,现为合肥工业大学微电子学院教授、博士生导师,主要研究方向为数字集成电路的硬件容错、星载SoC芯片的抗辐射加固等.E-mail:huangzhengfeng@139.com;潘尚杰 男,1997年4月出生,安徽繁昌人.硕士研究生,主要研究方向为数字集成电路的硬件容错.E-mail:psjhfut@163.com
  • 基金资助:
    国家自然科学基金(No.61874156,No.61874157,No.61904001);安徽省自然科学基金(No.1908085QF272)

Design of Triple-Node-Upset Self-Recovery Latch in 32nm CMOS Technology

HUANG Zheng-feng1, PAN Shang-jie1, CAO Jian-fei1, SONG Tai1, OUYANG Yi-ming2, LIANG Hua-guo1, NI Tian-ming3, LU Ying-chun1   

  1. 1. School of Electronic Science&Applied Physics, Hefei University of Technology, Hefei, Anhui 230601, China;
    2. School of Computer and Information, Hefei University of Technology, Hefei, Anhui 230601, China;
    3. College of Electrical Engineering, Anhui Polytechnic University, Wuhu, Anhui 241000, China
  • Received:2020-06-02 Revised:2020-09-27 Online:2021-02-25 Published:2020-10-22

摘要: CMOS工艺的特征尺寸不断缩减,电荷共享效应诱发的单粒子三点翻转成为研究热点.本文提出了一种单粒子三点翻转自恢复的抗辐射加固锁存器:Hydra-DICE(Dual Interlocked Storage Cell).该锁存器基于24个同构的交叉耦合单元(Cross-Coupled Elements,CCE)排列成阵列结构.当内部任意三个节点同时发生单粒子翻转时,该锁存器都可以自行恢复到正确的逻辑值.与具有等效三点自恢复能力的TNURL(Triple Node Upset Self-Recoverable Latch)锁存器相比,该Hydra-DICE锁存器面积开销降低50%,延迟降低48.28%,功耗降低25%,功耗延迟积降低61.21%.仿真结果表明,该加固锁存器在容错性能、面积开销、延迟和功耗方面取得了很好的折中.

 

关键词: 锁存器, 单粒子翻转, 双模互锁存储单元, 抗辐射加固, 自恢复

Abstract: The feature size of CMOS technology is continuously shrinking,and the single event triple-node-upset induced by the charge sharing effect has become a research hotspot.This paper proposed a single event triple-node-upset self-recovery radiation-hardened latch:Hydra-DICE.The latch is arranged in an array structure based on 24 homogeneous cross-coupled elements (CCE).When a single event upset occurs at any three internal nodes concurrently,Hydra-DICE can realize the function of self-recovery to the correct logical value.Compared with the TNURL latch which has the equivalent triple-node-upset self-recovery capability,the Hydra-DICE latch has a 50% reduction in area overhead,a 48.28% reduction in delay,a 25.00% reduction in power consumption,and a 61.21% reduction in power consumption delay product.The simulation results show that the hardened latch has made a good compromise in fault tolerance performance,area overhead,delay and power.

Key words: latch, single event upset, dual interlocked storage cell, radiation-hardened, self-recovery

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