Abstract：A dual-material-gate single-halo SOI MOSFET was proposed to suppress the short channel effect and increase the current driving capacity of deep submicron SOI MOSFETs.The gate consists of two materials contacting laterally and with different work functions,and halo doping is used in the channel near the source.Using the multi-region parabola potential distribution and the universal boundary conditions,the two-dimensional analytical models of surface potential and threshold voltage for the novel device were derived by solving the two-dimensional Poisson's equation under the fully depleted condition.The characteristics of the novel device were studied as compared with the conventional SOI MOSFET.It was shown that the novel device could suppress threshold voltage roll-off,hot carrier and drain-induced barrier lowering effects efficiently,and increase carrier transport speed through the channel considerably.The analytical models are in very good agreement with two-dimensional device simulator MEDICI.
李尊朝;蒋耀林;吴建民. 全耗尽异质栅单Halo SOI MOSFET二维模型[J]. 电子学报, 2007, 35(2): 212-215.
LI Zun-chao;JIANG Yao-lin;WU Jian-min. Two-Dimensional Model of Fully Depleted Dual-Material-Gate Single-Halo SOI MOSFET. Chinese Journal of Electronics, 2007, 35(2): 212-215.
2007, Vol. 35 
