Abstract：A linearly-graded drift region-doped LDMOS transistor is evaluated in this paper.The characteristics of the LDMOS with a linearly-graded drift region-doped profile have been demonstrated by the 2D semiconductor simulator MEDICI and verified by our experimental results.It has been shown that the reduction of the on-resistance by 30% from 7.7mΩ·cm2 to 5 mΩ·cm2 in the on-state and increase of the breakdown voltage by a factor of 1.5 from 178V to 234V in the off-state are obtained for the presented LDMOS structure when compared with those of the optimized conventional RESURF device.
何 进;张 兴;黄 如;林晓云;何泽宏. 改进击穿电压和导通电阻折中性能的线性变化掺杂漂移区RESURFLDMOS晶体管[J]. 电子学报, 2002, 30(2): 298-300.
HE Jin;ZHANG Xing;HUANG Ru;LING Xiao-yun;HE Zhe-hong. Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance. Chinese Journal of Electronics, 2002, 30(2): 298-300.
2002, Vol. 30 
