Abstract：For efficient yield prediction and inductive fault analysis of integrated circuits,it is usually assumed that defects related to the photolithographic in the wafer surface have the shape of circular discs,ellipse or squares.Real defects,however,exhibit a great variety of different shapes,their shapes usually play an extremely important role in the yield prediction.The fractal characterizations of real defect outlines are discussed,and the fractal dimension is estimated by wavelet transform,the result is in agree with the actual feature.So it provides new feature parameters for the characterization and computer simulation of defect outline.
孙晓丽;郝跃;宋国乡. IC缺陷轮廓分形维估计的小波方法[J]. 电子学报, 2006, 34(8): 1485-1487.
SUN Xiao-li;HAO Yue;SONG Guo-xiang. Estimating the Fractal Dimension of IC Defect Outline by Wavelet. Chinese Journal of Electronics, 2006, 34(8): 1485-1487.
2006, Vol. 34 
