Abstract：A model of luminous charge domain to analyze the characteristic of photoconductive switches has been first proposed.The switching procedure of high-gain photoconductive switches can be described with an optically activated luminous charge domain.The formation,radiation transit and accumulations of the charge domain are related with the triggering and sustaining phase of photoconductive switches,respectively.
施卫;梁振宪. 高倍增超快高压GaAs光电导开关触发瞬态特性分析[J]. 电子学报, 2000, 28(2): 20-23.
SHI Wei;LIANG Zhen-xian. Analysis and Characteristic of High-Gain Ultra-Fast GaAs Photoconductive Switches. Chinese Journal of Electronics, 2000, 28(2): 20-23.
2000, Vol. 28 
