Ku Band Power Amplifier MMIC Based on GaN HEMT Technology
YU Xu-ming1,2, HONG Wei1, WANG Wei-bo2, ZHANG Bin2
1. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, Jiangsu 210096, China;
2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, Jiangsu 210016, China
A three stage Ku band GaN power amplifier MMIC was developed with 0.25 μm GaN HEMT technology.The MMIC was designed in micro-strip technology.Based on the large signal model,the amplifier adopted reactance matching network to reduce the insertion loss of the output stage,which improved its associated efficiency.The measurement results exhibited that this amplifier provided a flat small signal gain of 30dB and a pulsed saturated output power of 15W at the drain voltage of 28V over the 14.6~18GHz frequency range.At 14.8 GHz,a peak output power of 19.5W with power added efficiency of 39% was achieved.
余旭明, 洪伟, 王维波, 张斌. Ku波段宽带氮化镓功率放大器MMIC[J]. 电子学报, 2015, 43(9): 1859-1863.
YU Xu-ming, HONG Wei, WANG Wei-bo, ZHANG Bin. Ku Band Power Amplifier MMIC Based on GaN HEMT Technology. Chinese Journal of Electronics, 2015, 43(9): 1859-1863.
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2015, Vol. 43 
