Recent Advances in Modulation Mechanisms of Polarity and Chirality of Magnetic Vortices and Magnetization Dynamic Properties

GUO Baojun; CUI Huanqing; YANG Xiaokuo

doi:10.12263/DZXB.20260080

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Recent Advances in Modulation Mechanisms of Polarity and Chirality of Magnetic Vortices and Magnetization Dynamic Properties

SURVEY AND REVIEW | 更新时间：2026-07-30

- Recent Advances in Modulation Mechanisms of Polarity and Chirality of Magnetic Vortices and Magnetization Dynamic Properties
- ACTA ELECTRONICA SINICA Vol. 54, Issue 4, Pages: 1900-1930(2026)
- 作者机构：
  
  空军工程大学基础部，陕西西安 710051
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62301595;62274183)
- DOI：10.12263/DZXB.20260080
  CLC： TN3;O469;O482.5
- Received：24 March 2026，
  
  Accepted：01 April 2026，
  
  Online First：20 May 2026，
  
  Published：25 April 2026
- 稿件说明：
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郭宝军, 崔焕卿, 杨晓阔. 磁涡旋极性-旋性调控机制及磁化动力学特性研究进展[J]. 电子学报, 2026, 54(04): 1900-1930.

GUO Baojun, CUI Huanqing, YANG Xiaokuo. Recent Advances in Modulation Mechanisms of Polarity and Chirality of Magnetic Vortices and Magnetization Dynamic Properties[J]. Acta Electronica Sinica, 2026, 54(04): 1900-1930.
郭宝军, 崔焕卿, 杨晓阔. 磁涡旋极性-旋性调控机制及磁化动力学特性研究进展[J]. 电子学报, 2026, 54(04): 1900-1930. DOI：10.12263/DZXB.20260080

GUO Baojun, CUI Huanqing, YANG Xiaokuo. Recent Advances in Modulation Mechanisms of Polarity and Chirality of Magnetic Vortices and Magnetization Dynamic Properties[J]. Acta Electronica Sinica, 2026, 54(04): 1900-1930. DOI：10.12263/DZXB.20260080

摘要

随着硅基互补金属氧化物半导体（Complementary Metal Oxide Semiconductor，CMOS）集成电路逐渐逼近物理极限，传统硅基器件面临量子隧穿、焦耳热损耗等难以逾越的技术瓶颈，开发兼具低功耗、高速度、高密度特性的新型信息存储与逻辑器件，已成为后摩尔时代微电子技术发展的核心需求。自旋电子器件以电子自旋为信息载体，凭借非易失性、低功耗、高抗辐射等显著优势，成为突破传统半导体技术壁垒的核心研究方向。其中，磁涡旋作为典型的拓扑磁结构，拥有极性与旋性（手性）两个完全解耦的内禀自由度，二者共同构成四重简并态，可天然实现四态多值存储，同时其具备丰富的自旋波激发模式、无需依赖含Dzyaloshinskii-Moriya相互作用（DMI）的复杂材料体系、输运过程无斯格明子霍尔效应导致的位移偏差等天然优势，在高密度存储、GHz频段高频器件、低功耗逻辑运算等领域展现出广阔的应用前景。本文系统综述了磁涡旋极性-旋性的多维度调控机制，梳理形成了主流调控手段的完整研究逻辑框架，重点剖析了自旋转移矩（Spin Transfer Torque，STT）、自旋轨道矩（Spin Orbit Torque，SOT）、应变调控、表面声波（Surface Acoustic Wave，SAW）等调控方式的物理机制、研究进展与性能局限：STT与SOT调控响应速度快，能通过电流密度的精准控制实现极性-旋性的选择性切换，但存在高电流密度引发的热损耗、界面损伤等问题；应变调控凭借逆磁致伸缩效应实现了零焦耳热的超低功耗操控，已从早期机械扭力驱动发展为适配片上集成的压电异质结方案，可实现纳秒级极性与旋性的确定性翻转；SAW调控通过磁声耦合效应实现了磁涡旋的非接触式长程操控，其高次谐波驱动为极性和旋性翻转提供了全新低功耗路径。同时，本文以磁涡旋调控逻辑为参照，与同源拓扑磁结构斯格明子的拓扑态调控开展横向对比，厘清了两类结构在拓扑本质、自由度耦合特性、调控窗口与器件适配性上的核心差异，为磁涡旋调控机制优化提供了新的思路与借鉴。在此基础上，本文深入探讨了磁涡旋磁化动力学特性的研究演进历程，围绕涡旋核回旋运动调控、高频自旋波激发、非线性倍频效应等重要方向，分析了其在GHz频段器件中的应用潜力。针对当前应变调控存在的频率失配、激发效率低等核心瓶颈，提出了基于非线性倍频效应的高频自旋波共振激发路径，以及可重构磁电异质结器件的设计思路。本文系统整合了磁涡旋从基础物理机制到器件化应用的全链条研究脉络，为下一代低功耗、高频化自旋电子器件的开发提供了系统的理论依据与技术参考。

Abstract

As silicon-based complementary metal oxide semiconductor (CMOS) integrated circuits gradually approach their physical limits

traditional silicon-based devices are facing insurmountable technical bottlenecks such as quantum tunneling and Joule heating loss. The development of novel information storage and logic devices with the combined characteristics of low power consumption

high speed and high integration density has become the core demand for the advancement of microelectronics technology in the post-Moore’s Law era. Spintronic devices

which take electron spin as the information carrier

have emerged as a pivotal research direction to break through the technical barriers of traditional semiconductor technology

by virtue of their prominent advantages including non-volatility

low power consumption and high radiation resistance. Among them

magnetic vortex

as a typical topological magnetic structure

possesses two fully decoupled intrinsic degrees of freedom

namely polarity and chirality. These two degrees of freedom together form a four-fold degenerate state

which can inherently realize four-state multivalue storage. Meanwhile

it has inherent advantages such as abundant spin wave excitation modes

no requirement for complex material systems containing Dzyaloshinskii-Moriya interaction (DMI)

and no displacement deviation caused by the skyrmion Hall effect during transport

thus exhibiting broad application prospects in the fields of high-density storage

GHz-band high-frequency devices

and low-power logic operation. This paper systematically reviews the multi-dimensional modulation mechanisms of magnetic vortex polarity and chirality

combs through and constructs a complete research logic framework of mainstream modulation methods

and focuses on analyzing the physical mechanisms

research progress and performance limitations of typical modulation methods including spin transfer torque (STT)

spin-orbit torque (SOT)

strain-mediated modulation

and surface acoustic wave (SAW). STT and SOT modulation have fast responses

and can realize selective switching of polarity and chirality through precise control of current density

but suffer from problems such as thermal loss and interface damage caused by high current density. Strain-mediated modulation achieves ultra-low power manipulation without Joule heating via the inverse magnetostrictive effect

which has evolved from early mechanical torsion drive to a piezoelectric heterojunction scheme suitable for on-chip integration

and can realize nanosecond-scale deterministic switching of polarity and chirality. SAW modulation realizes non-contact long-range manipulation of magnetic vortices through the magnetoacoustic coupling effect

and its high-order harmonic drive provides a novel low-power path for the switching of both polarity and chirality. Meanwhile

taking the modulation logic of magnetic vortices as a reference

this paper conducts a horizontal comparative analysis on the topological state modulation of skyrmions

a homologous topological magnetic structure

and clarifies the core differences between the two types of structures in terms of topological essence

coupling characteristics of degrees of freedom

modulation window and device applicability

which provides new ideas and references for the optimization of magnetic vortex modulation mechanisms. On this basis

this paper thoroughly discusses the research evolution process of the magnetization dynamic properties of magnetic vortices

and analyzes their application potential in GHz-band devices around key directions including the regulation of vortex core gyrotropic motion

high-frequency spin wave excitation

and nonlinear frequency multiplication effect. Aiming at the core bottlenecks of frequency mismatch and low excitation efficiency existing in current strain-mediated modulation

this paper proposes a resonance excitation path of high-frequency spin waves based on the nonlinear frequency multiplication effect

as well as the design idea of reconfigurable magnetoelectric heterojunction devices. This paper systematically integrates the full-chain research context of magnetic vortices from basic physical mechanisms to device-oriented applications

and provides a systematic theoretical basis and technical reference for the development of next-generation low-power

high-frequency spintronic devices.

关键词

Keywords

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