Single-Event Effects in High-Voltage Diamond Field-Effect Transistors

FU Yu; ZHANG Zhendong; QIAN Peng; WANG Ruochen; REN Zeyang; SU Kai; CHI Yaqing; ZHANG Jincheng; HAO Yue

doi:10.12263/DZXB.20260597

您当前的位置：

首页 >

文章列表页 >

Single-Event Effects in High-Voltage Diamond Field-Effect Transistors

PAPERS | 更新时间：2026-10-16

- Single-Event Effects in High-Voltage Diamond Field-Effect Transistors
- ACTA ELECTRONICA SINICA Vol. 54, Issue 6, Pages: 2649-2656(2026)
- 作者机构：
  
  1.西安电子科技大学集成电路学部宽禁带半导体器件与集成技术国家重点实验室，陕西西安 710071
  2.国防科技大学计算机学院，湖南长沙410073
  3.国防科技大学先进微处理器芯片与系统重点实验室，湖南长沙410073
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62421005;62404172)
- DOI：10.12263/DZXB.20260597
  CLC： TP211+.5;
- Received：20 May 2026，
  
  Accepted：01 June 2026，
  
  Published：25 June 2026
- 稿件说明：
移动端阅览
付裕, 张振东, 钱鹏, 等. 金刚石高压场效应管单粒子效应研究[J]. 电子学报, 2026, 54(06): 2649-2656.

FU Yu, ZHANG Zhendong, QIAN Peng, et al. Single-Event Effects in High-Voltage Diamond Field-Effect Transistors[J]. Acta Electronica Sinica, 2026, 54(06): 2649-2656.
付裕, 张振东, 钱鹏, 等. 金刚石高压场效应管单粒子效应研究[J]. 电子学报, 2026, 54(06): 2649-2656. DOI：10.12263/DZXB.20260597

FU Yu, ZHANG Zhendong, QIAN Peng, et al. Single-Event Effects in High-Voltage Diamond Field-Effect Transistors[J]. Acta Electronica Sinica, 2026, 54(06): 2649-2656. DOI：10.12263/DZXB.20260597

摘要

金刚石凭借其超宽禁带、超高热导率、高击穿场强以及优异的载流子输运和抗辐照潜力等特性，在抗辐照高压功率器件领域具有重要应用前景，尤其适用于空间电源系统、深空探测平台和高能粒子辐射环境下的功率调控单元。然而，针对决定器件在轨可靠性的关键失效模式——单粒子效应，目前国际上尚缺乏关于金刚石场效应管的实验报道，相关失效机制、耐受阈值及瞬态响应特性仍有待系统阐明。本文制备了p沟道氢终端金刚石高压金属-氧化物-半导体场效应晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFET），通过金属化后退火工艺优化了器件的界面质量与电学性能，器件关态击穿电压达-980 V，且漏电水平优于国外同类器件，表明所制备器件具备开展高压偏置辐照验证的基础条件。在此基础上，分别利用Ta离子（LET值为77.6 MeV·cm²/mg）和Kr离子（LET值为37.9 MeV·cm²/mg）开展了重离子单粒子辐照实验，首次从实验上揭示了金刚石FET的单粒子烧毁与单粒子瞬态特性。实验结果表明，器件在200 V工作偏置下，对两种LET值的重离子均未发生单粒子烧毁，抗烧毁LET阈值高于77.6 MeV·cm²/mg，初步验证了金刚石FET在高LET重离子辐照环境下的抗单粒子烧毁潜力；在Ta离子辐照下仅捕获到1次幅值约40 V的瞬态脉冲，在Kr离子辐照下未出现可分辨的瞬态事件，展现出对单粒子效应的强耐受性。本工作为金刚石抗辐照功率器件设计及其空间辐射效应研究提供了关键实验依据，并为后续开展更高偏置、更高LET条件下的器件可靠性评估奠定了基础。

Abstract

Owing to its exceptional properties such as an ultrawide bandgap

ultrahigh thermal conductivity

high breakdown field

as well as excellent carrier transport and radiation resistance potential

diamond holds significant promise for radiation-hardened high-voltage power devices

and is particularly suitable for power regulation units in space power systems

deep space exploration platforms and high-energy particle radiation environments. However

with respect to single-event effects

which represent a critical failure mode governing the on-orbit reliability of devices

experimental reports on diamond field-effect transistors (FETs) remain absent in the international literature

and the relevant failure mechanisms

tolerance thresholds and transient response characteristics still need to be systematically clarified. In this work

p-channel hydrogen-terminated diamond high-voltage metal-oxide-semiconductor FETs (MOSFETs) are fabricated

and a post-metallization annealing process is employed to improve the interface quality and electrical performance. The devices achieve an off-state breakdown voltage of -980 V with a leakage level superior to that of comparable devices reported abroad

indicating that the fabricated devices have the basic conditions for carrying out high-voltage bias irradiation verification. Based on this foundation

heavy-ion single-event irradiation experiments using Ta ions (LET = 77.6 MeV·cm²/mg) and Kr ions (LET = 37.9 MeV·cm²/mg) are carried out

revealing for the first time the single-event burnout and single-event transient characteristics of diamond FETs experimentally. The experimental results demonstrate that under a bias of 200 V

no single-event burnout occurred for either ion species

and the burnout threshold exceeds 77.6 MeV·cm²/mg

preliminarily verifying the single-event burnout resistance potential of diamond FETs in high-LET heavy-ion irradiation environments. Only one transient pulse with an amplitude of approximately 40 V is captured during Ta-ion irradiation

whereas no discernible transient events were observed under Kr-ion irradiation

indicating a strong tolerance to single-event effects. This work provides a key experimental basis for the design of radiation-hardened diamond power devices and the investigation of their space radiation effects

and lays a foundation for subsequent reliability evaluation of devices under higher bias and higher LET conditions.

关键词

Keywords

references

赵元富 , 王亮 , 岳素格 , 等 . 宇航抗辐射加固集成电路技术发展与思考 [J ] . 上海航天(中英文) , 2021 , 38 ( 4 ): 12 - 18 .

Zhao Yuanfu , Wang Liang , Yue Suge , et al . Development and considerations for aerospace radiation-hardened integrated circuit [J ] . Aerospace Shanghai (Chinese & English) , 2021 , 38 ( 4 ): 12 - 18 . (in Chinese)

郝跃 . 宽禁带与超宽禁带半导体器件新进展 [J ] . 科技导报 , 2019 , 37 ( 3 ): 58 - 61 .

Hao Yue . New progress in wide and ultra-wide bandgap semiconductor devices [J ] . Science & Technology Review , 2019 , 37 ( 3 ): 58 - 61 . (in Chinese)

张金风 , 张进成 , 任泽阳 , 等 . 金刚石二维电导和场效应管研究新进展 [J ] . 电子学报 , 2024 , 52 ( 6 ): 2151 - 2160 . DOI: 10.12263/DZXB.20240103 http://dx.doi.org/10.12263/DZXB.20240103

Zhang Jinfeng , Zhang Jincheng , Ren Zeyang , et al . Research progress of two-dimensional electrical conductivity and field effect transistors of diamond [J ] . Acta Electronica Sinica , 2024 , 52 ( 6 ): 2151 - 2160 . (in Chinese) . DOI: 10.12263/DZXB.20240103 http://dx.doi.org/10.12263/DZXB.20240103

马孟宇 , 蔚翠 , 何泽召 , 等 . 氢终端金刚石薄膜生长及其表面结构 [J ] . 物理学报 , 2024 , 73 ( 8 ): 323 - 328 . DOI: 10.7498/aps.73.20240053 http://dx.doi.org/10.7498/aps.73.20240053

Ma Mengyu , Yu Cui , He Zezhao , et al . Growth and surface structrue of hydrogen terminal diamond thin films [J ] . Acta Physica Sinica , 2024 , 73 ( 8 ): 323 - 328 . (in Chinese) . DOI: 10.7498/aps.73.20240053 http://dx.doi.org/10.7498/aps.73.20240053

Yu Xinxin , Qiao Bin , Sun Yan , et al . High- k /diamond RF MOSFETs with record high f T / f max of 90/164 GHz and first demonstration of a diamond MMIC [C ] // Proceedings of 2024 IEEE International Electron Devices Meeting . Piscataway : IEEE , 2024 : 1 - 4 . DOI: 10.1109/iedm50854.2024.10873491 http://dx.doi.org/10.1109/iedm50854.2024.10873491

Zhang Wenchao , Liu Benjian , Chen Ziyi , et al . Ultralow-consumption ferroelectric-like diamond transistors for advancing logic circuits [J ] . Advanced Functional Materials , 2026 , 36 ( 34 ): e23162 . DOI: 10.1002/adfm.202523162 http://dx.doi.org/10.1002/adfm.202523162

Li Chuanlong , Liu Benjian , Liang Bo , et al . High-open-circuit voltage diamond alpha-voltaic battery with interface reconstructed by amorphous gallium oxide [J ] . Carbon , 2026 , 250 : 121251 . DOI: 10.1016/j.carbon.2026.121251 http://dx.doi.org/10.1016/j.carbon.2026.121251

Liu Jiangwei , Teraji T , Da Bo , et al . High output current boron-doped diamond metal-semiconductor field-effect transistors [J ] . IEEE Electron Device Letters , 2019 , 40 ( 11 ): 1748 - 1751 . DOI: 10.1109/led.2019.2942967 http://dx.doi.org/10.1109/led.2019.2942967

Shimaoka T , Liao Meiyong , Koizumi S . N-type diamond metal-semiconductor field-effect transistor with high operation temperature of 300 ℃ [J ] . IEEE Electron Device Letters , 2022 , 43 ( 4 ): 588 - 591 . DOI: 10.1109/led.2022.3156149 http://dx.doi.org/10.1109/led.2022.3156149

Kawarada H , Aoki M , Ito M . Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds [J ] . Applied Physics Letters , 1994 , 65 ( 12 ): 1563 - 1565 . DOI: 10.1063/1.112915 http://dx.doi.org/10.1063/1.112915

付裕 . 氢终端和硅终端金刚石MOSFET研究 [D ] . 成都 : 电子科技大学 , 2022 .

Fu Yu . Research on hydrogen- and silicon-terminated diamond MOSFETs [D ] . Chengdu : University of Electronic Science and Technology of China , 2022 . (in Chinese)

Kawarada H , Yamada T , Xu D , et al . Wide temperature (10 K-700 K) and high voltage (∼1 000 V) operation of C-H diamond MOSFETs for power electronics application [C ] // Proceedings of 2014 IEEE International Electron Devices Meeting . Piscataway : IEEE , 2014 : 11.2.1- 11 . 2 . 4 . DOI: 10.1109/iedm.2014.7047030 http://dx.doi.org/10.1109/iedm.2014.7047030

Kitabayashi Y , Kudo T , Tsuboi H , et al . Normally-off C-H diamond MOSFETs with partial C-O channel achieving 2-kV breakdown voltage [J ] . IEEE Electron Device Letters , 2017 , 38 ( 3 ): 363 - 366 . DOI: 10.1109/led.2017.2661340 http://dx.doi.org/10.1109/led.2017.2661340

Saha N C , Kim S W , Oishi T , et al . 345-MW/cm ² 2608-V NO 2 p-type doped diamond MOSFETs with an Al 2 O 3 passivation overlayer on heteroepitaxial diamond [J ] . IEEE Electron Device Letters , 2021 , 42 ( 6 ): 903 - 906 . DOI: 10.1109/led.2021.3075687 http://dx.doi.org/10.1109/led.2021.3075687

Saha N C , Kim S W , Koyama K , et al . 3659-V NO 2 p-type doped diamond MOSFETs on misoriented heteroepitaxial diamond substrates [J ] . IEEE Electron Device Letters , 2023 , 44 ( 1 ): 112 - 115 . DOI: 10.1109/led.2022.3226426 http://dx.doi.org/10.1109/led.2022.3226426

Saha N C , Eguchi M , Oishi T , et al . High off-state voltage (4 266 V) diamond metal oxide semiconductor field effect transistors [J ] . Journal of Vacuum Science & Technology B , 2025 , 43 ( 4 ): 042201 . DOI: 10.1116/6.0004552 http://dx.doi.org/10.1116/6.0004552

Fu Yu , Ren Zeyang , Su Kai , et al . Integration of oxidized silicon- and hydrogen-terminated diamond p-channels for normally-off high-voltage diamond power devices [J ] . IEEE Electron Device Letters , 2025 , 46 ( 3 ): 330 - 333 . DOI: 10.1109/led.2025.3528120 http://dx.doi.org/10.1109/led.2025.3528120

苏凯 . 高性能CVD金刚石核探测器及相关电子器件研究 [D ] . 西安 : 西安电子科技大学 , 2020 .

Su Kai . Investigation of high performance CVD diamond radiation detectors and related electronic devices [D ] . Xi’an : Xidian University , 2020 . (in Chinese)

Ding Senchuan , Zhang Jinfeng , Su Kai , et al . Single-crystal diamond grown through high-power-density epitaxy used for a high-performance radiation detector [J ] . Science China Materials , 2024 , 67 ( 7 ): 2329 - 2334 . DOI: 10.1007/s40843-024-2955-x http://dx.doi.org/10.1007/s40843-024-2955-x

Verona C , Ciccognani W , Colangeli S , et al . 14.8-MeV neutron irradiation on H-terminated diamond-based MESFETs [J ] . IEEE Electron Device Letters , 2016 , 37 ( 12 ): 1597 - 1600 . DOI: 10.1109/led.2016.2620338 http://dx.doi.org/10.1109/led.2016.2620338

Yamaguchi T , Umezawa H , Ohmagari S , et al . Radiation hardened H-diamond MOSFET (RADDFET) operating after 1 MGy irradiation [J ] . Applied Physics Letters , 2021 , 118 ( 16 ): 162105 . DOI: 10.1063/5.0040645 http://dx.doi.org/10.1063/5.0040645

Pullaiah Y , Bajaj M , Nayak K . Investigation of X-ray irradiance hardness and high temperature operation of H-terminated diamond MOSFET [J ] . IEEE Transactions on Electron Devices , 2025 , 72 ( 2 ): 557 - 563 . DOI: 10.1109/ted.2024.3514813 http://dx.doi.org/10.1109/ted.2024.3514813

Cao Yanhui , Guo Hongxia , Ma Wuying , et al . Study on single event effects of diamond Schottky diodes based on TCAD simulation [J ] . APL Electronic Devices , 2025 , 1 ( 2 ): 026103 . DOI: 10.1063/5.0252685 http://dx.doi.org/10.1063/5.0252685

He Z , Ponomarev I , Chow T P . Single-event burnout evaluation in high voltage lateral and quasi-lateral diamond MOSFETs [J ] . Diamond and Related Materials , 2025 , 155 : 112347 . DOI: 10.1016/j.diamond.2025.112347 http://dx.doi.org/10.1016/j.diamond.2025.112347

Hiraiwa A , Matsumura D , Okubo S , et al . Post-deposition-annealing effect on current conduction in Al 2 O 3 films formed by atomic layer deposition with H 2 O oxidant [J ] . Journal of Applied Physics , 2017 , 121 ( 7 ): 074502 . DOI: 10.1063/1.4976211 http://dx.doi.org/10.1063/1.4976211

Daicho A , Saito T , Kurihara S , et al . High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al 2 O 3 [J ] . Journal of Applied Physics , 2014 , 115 ( 22 ): 223711 . DOI: 10.1063/1.4881524 http://dx.doi.org/10.1063/1.4881524

Views

179

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Key Issue and Research Challenges of Wide Bandgap Semiconductor Detectors for Fusion Neutron Detection

Research Progress of Two-Dimensional Electrical Conductivity and Field Effect Transistors of Diamond

A Study on MPCVD of Thick Diamond Film on TWT Rod to Improve the Heat Dissipation

Knowledge-Augmented Grounded Image Narrative Generation

CloAct: Key Classes Identification Based on Clone Relationships and Motifs

Related Author

HAO Yue

WANG Ruochen

QIAN Peng

FU Yu

REN Zeyang

SU Kai

ZHANG Jincheng

ZHANG Jin-feng

Related Institution

State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Faculty of Integrated Circuit, Xidian University

State Key Laboratory of Wide Band-gap Semiconductor Devices and Integrated Technology, Faculty of Integrated Circuit, Xidian University

National Engineering Research Center of Wide Band-gap Semiconductor, Xidian University

Institute of Semiconductors, Chinese Academy of Sciences

Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics

⁰