面向K/Ka波段应用的宽带高线性CMOS低噪声放大器设计

罗将; 罗军; 曾新喜

doi:10.12263/DZXB.20260421

您当前的位置：

首页 >

文章列表页 >

面向K/Ka波段应用的宽带高线性CMOS低噪声放大器设计

射频计算 | 更新时间：2026-10-16

- 面向K/Ka波段应用的宽带高线性CMOS低噪声放大器设计
- A Broadband High-Linearity CMOS Low-Noise Amplifier for K/Ka-Band Applications
- 电子学报 2026年54卷第6期页码：2470-2480
- 作者机构：
  
  1.杭州电子科技大学电子信息学院，浙江杭州 310018
  2.北京科技大学机械工程学院，北京 100083
  3.东南大学毫米波全国重点实验室，江苏南京 210096
- 作者简介：
  
  罗将男，1990年8月生，江西赣州人。现为杭州电子科技大学电子信息学院副教授、博士生导师。主要研究方向为毫米波/太赫兹芯片关键技术，以及电磁信息超材料与调控芯片的融合设计。中国电子学会会员编号：E190157506S。E-mail: luojiang@hdu.edu.cn
  罗军男，2003年3月生，安徽安庆人。现为杭州电子科技大学硕士研究生。主要研究方向为射频集成电路设计。E-mail: 1649456847@qq.com
  曾新喜男，1989年6月生，湖南娄底人。现为北京科技大学副教授。主要研究方向为电子信息材料与器件。E-mail: zengxinxi@ustb.edu.cn
- 基金信息：
  
  国家重点研发计划(2023YFB3811503);国家自然科学基金(52302132);毫米波全国重点实验室开放基金(KN202501-01)
- DOI：10.12263/DZXB.20260421
  中图分类号： TN402;TN722.3
- 收稿：2026-03-31，
  
  录用：2026-04-27，
  
  纸质出版：2026-06-25
- 稿件说明：
移动端阅览
罗将, 罗军, 曾新喜. 面向K/Ka波段应用的宽带高线性CMOS低噪声放大器设计[J]. 电子学报, 2026, 54(06): 2470-2480.

LUO Jiang, LUO Jun, ZENG Xinxi. A Broadband High-Linearity CMOS Low-Noise Amplifier for K/Ka-Band Applications[J]. Acta Electronica Sinica, 2026, 54(06): 2470-2480.
罗将, 罗军, 曾新喜. 面向K/Ka波段应用的宽带高线性CMOS低噪声放大器设计[J]. 电子学报, 2026, 54(06): 2470-2480. DOI：10.12263/DZXB.20260421

LUO Jiang, LUO Jun, ZENG Xinxi. A Broadband High-Linearity CMOS Low-Noise Amplifier for K/Ka-Band Applications[J]. Acta Electronica Sinica, 2026, 54(06): 2470-2480. DOI：10.12263/DZXB.20260421

摘要

在毫米波通信技术快速发展的背景下，面向高质量、大容量数据传输的射频前端电路需求不断提升。作为接收机前端的关键模块，低噪声放大器（Low-Noise Amplifier，LNA）不仅需要具备低噪声系数（Noise Figure，NF）以提高系统对微弱信号的检测灵敏度，还需保持较高线性度，以应对强干扰和复杂调制信号环境下的增益压缩与信号失真问题。特别是在宽带工作条件下，如何在低噪声、高增益和高线性度之间实现有效平衡，仍是毫米波集成电路设计中的重要挑战。针对上述需求，本文基于55 nm互补金属氧化物半导体（Complementary Metal-Oxide-Semiconductor，CMOS）工艺，设计并实现了一款面向K/Ka波段的高

线性度宽带低噪声放大器芯片。电路采用两级共源共栅（Cascode）拓扑结构，并在跨导管源极引入电感退化反馈，以拓展输入电压摆幅并改善大信号线性度。同时，本文定量分析了偏置条件对晶体管三阶非线性跨导项的影响，将主放大晶体管偏置在三阶跨导

零点附近，从而有效抑制非线性失真并提升输入1 dB压缩点（Input 1 dB compression Point，IP

1 dB

）。此外，利用栅极电容峰化策略对高频增益响应进行补偿，进一步改善了宽带范围内的增益性能。在版图设计方面，本文采用三维交错布局策略，通过优化晶体管指状结构及金属层间空间排布，降低毫米波频段下敏感的栅极寄生电阻和源极寄生电感，减小关键互连寄生效应对噪声、增益和稳定性的影响，从而提升电路在高频宽带条件下的综合性能。测试结果表明，所提出LNA在21.5~30.3 GHz频段内实现了16.8 dB的峰值增益、8.8 GHz的3 dB带宽和3.26 dB的最低噪声系数；实测IP

1 dB

最高可达

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120459907&type=

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120459906&type=

1.69333339

2.28600001

3.6 dBm，核心面积仅为0.11 mm²。上述结果验证了所提方法在提升毫米波LNA综合性能方面的有效性，可为高动态范围毫米波接收前端中的LNA设计提供一种有潜力的技术方案。

Abstract

With the rapid development of millimeter-wave communication systems

radio-frequency front-end circuits are increasingly required to support high-quality and high-capacity data transmission. As a key building block in the receiver front-end

the low-noise amplifier (LNA) must provide a low noise figure (NF) for high sensitivity while maintaining sufficient linearity to alleviate gain compression and signal distortion under strong interferers and complex modulation scenarios. However

achieving low noise

high gain

and high linearity simultaneously over a wide bandwidth remains challenging for millimeter-wave integrated circuit design. To address these challenges

this paper presents a K/Ka-band high-linearity wideband LNA implemented in a 55 nm complementary metal-oxide-semiconductor (CMOS) process. The proposed LNA adopts a two-stage cascode topology

in which source inductive degeneratio

n is introduced in the common-source transistors to extend the input voltage swing and improve large-signal linearity. The bias-dependent third-order transconductance nonlinearity is quantitatively analyzed

and the main amplifying transistors are biased near the zero-crossing point of

thereby suppressing third-order nonlinear distortion and improving the input 1 dB compression point (IP

1 dB

). In addition

a gate-capacitance peaking strategy is employed to compensate the high-frequency gain response

further improving the gain performance over a broad bandwidth. A three-dimensional interdigitated layout strategy is further developed to optimize the transistor finger structure and metal-layer arrangement. This approach reduces the parasitic gate resistance and source inductance

which are particularly detrimental at millimeter-wave frequencies

thereby mitigating their impact on noise

gain

and stability. Measurement results show that the proposed LNA achieves a peak gain of 16.8 dB

a 3 dB bandwidth of 8.8 GHz over 21.5~30.3 GHz

and a minimum NF of 3.26 dB. The measured IP

1 dB

reaches -3.6 dBm

while the core area is only 0.11 mm². These results demonstrate that the proposed design effectively improves the noise-linearity-gain trade-off and provides a promising solution for high-dynamic-range millimeter-wave receiver front ends.

关键词

Keywords

references

Hong W , Jiang Z H , Yu C , et al . The role of millimeter-wave technologies in 5G/6G wireless communications [J ] . IEEE Journal of Microwaves , 2021 , 1 ( 1 ): 101 - 122 . DOI: 10.1109/jmw.2020.3035541 http://dx.doi.org/10.1109/jmw.2020.3035541

陈喆 , 王品清 , 周培根 , 等 . 基于45 nm CMOS SOI工艺的毫米波双频段低相噪压控振荡器设计 [J ] . 电子学报 , 2024 , 52 ( 7 ): 2161 - 2169 . DOI: 10.12263/DZXB.20230645 http://dx.doi.org/10.12263/DZXB.20230645

Chen Zhe , Wang Pinqing , Zhou Peigen , et al . Design of a millimeter-wave dual-band low phase noise VCO in 45 nm CMOS SOI process [J ] . Acta Electronica Sinica , 2024 , 52 ( 7 ): 2161 - 2169 . (in Chinese) . DOI: 10.12263/DZXB.20230645 http://dx.doi.org/10.12263/DZXB.20230645

Bai X J , Wu Y L , Zhen S C , et al . A 8~10 GHz compact low noise amplifier MMIC with high linearity based on GaAs technology [J ] . Microelectronics Journal , 2025 , 162 : 106742 . DOI: 10.1016/j.mejo.2025.106742 http://dx.doi.org/10.1016/j.mejo.2025.106742

Yang J , Chatterjee B , Abu Khater M , et al . Sub-1-ms instinctual interference adaptive GaN LNA front end with power and linearity tuning [J ] . IEEE Transactions on Microwave Theory and Techniques , 2023 , 71 ( 9 ): 4037 - 4051 . DOI: 10.1109/tmtt.2023.3248957 http://dx.doi.org/10.1109/tmtt.2023.3248957

Elsayed O , Zarate-Roldan J , Abuellil A , et al . Highly linear low-power wireless RF receiver for WSN [J ] . IEEE Transactions on Very Large Scale Integration (VLSI) Systems , 2019 , 27 ( 5 ): 1007 - 1016 . DOI: 10.1109/tvlsi.2018.2890093 http://dx.doi.org/10.1109/tvlsi.2018.2890093

Wan J L , Yi X , Xu S L , et al . Research progress of millimeter-wave bidirectional transceiver circuits and systems [C ] // 2025 IEEE MTT-S International Wireless Symposium . Piscataway : IEEE , 2025 : 1 - 3 . DOI: 10.1109/iws65943.2025.11177922 http://dx.doi.org/10.1109/iws65943.2025.11177922

Vigilante M , Reynaert P . 20.10 A 68.1~96.4 GHz variable-gain low-noise amplifier in 28 nm CMOS [C ] // 2016 IEEE International Solid-State Circuits Conference . Piscataway : IEEE , 2016 : 360 - 362 . DOI: 10.1109/isscc.2016.7418056 http://dx.doi.org/10.1109/isscc.2016.7418056

Hafeez M , Elelimy Abounemra A M , Ghannouchi F M . High gain 0.25 μm GaN HEMT based MMIC LNA for GNSS applications [C ] // 2019 IEEE MTT-S International Wireless Symposium . Piscataway : IEEE , 2019 : 1 - 4 . DOI: 10.1109/IEEE-IWS.2019.8803898 http://dx.doi.org/10.1109/IEEE-IWS.2019.8803898

Wang C T , Hao Y , Zhang H Y , et al . A 60 GHz LNA with 4.7 dB NF and 18 dB gain using interstage impedance matching technique in 90 nm CMOS [C ] // 2011 IEEE International Conference on Microwave Technology & Computational Electromagnetics . Piscataway : IEEE , 2011 : 270 - 273 . DOI: 10.1109/icmtce.2011.5915509 http://dx.doi.org/10.1109/icmtce.2011.5915509

Kawano Y , Suzuki T , Sato M , et al . A 77 GHz transceiver in 90 nm CMOS [C ] // 2009 IEEE International Solid-State Circuits Conference-Digest of Technical Papers . Piscataway : IEEE , 2009 : 310 - 311 . DOI: 10.1109/isscc.2009.4977432 http://dx.doi.org/10.1109/isscc.2009.4977432

Lee J , Li Y A , Hung M H , et al . A fully-integrated 77 GHz FMCW radar transceiver in 65 nm CMOS technology [J ] . IEEE Journal of Solid-State Circuits , 2010 , 45 ( 12 ): 2746 - 2756 . DOI: 10.1109/jssc.2010.2075250 http://dx.doi.org/10.1109/jssc.2010.2075250

Le V H , Duong H T , Huynh A T , et al . A CMOS 77 GHz receiver front-end for automotive radar [J ] . IEEE Transactions on Microwave Theory and Techniques , 2013 , 61 ( 10 ): 3783 - 3793 . DOI: 10.1109/tmtt.2013.2279368 http://dx.doi.org/10.1109/tmtt.2013.2279368

Ciccognani W , Limiti E , Longhi P E , et al . MMIC LNAs for radioastronomy applications using advanced industrial 70 nm metamorphic technology [J ] . IEEE Journal of Solid-State Circuits , 2010 , 45 ( 10 ): 2008 - 2015 . DOI: 10.1109/jssc.2010.2058170 http://dx.doi.org/10.1109/jssc.2010.2058170

Pan D F , Duan Z M , Chakraborty S , et al . A 60~90 GHz CMOS double-neutralized LNA technology with 6.3 dB NF and <math id="M72"><mo>-</mo></math> https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120460601&type= https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120460610&type= 1.69333339 2.28600001 10 dBm IP 1 dB [J ] . IEEE Microwave and Wireless Components Letters , 2019 , 29 ( 7 ): 489 - 491 . DOI: 10.1109/lmwc.2019.2919631 http://dx.doi.org/10.1109/lmwc.2019.2919631

Kong S , Lee H D , Jang S , et al . A 28 GHz CMOS LNA with stability-enhanced <math id="M73"><msub><mrow><mi>G</mi></mrow><mrow><mi mathvariant="normal">m</mi></mrow></msub></math> https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120460639&type= https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120460612&type= 3.72533321 3.21733332 -boosting technique using transformers [C ] // 2019 IEEE Radio Frequency Integrated Circuits Symposium . Piscataway : IEEE , 2019 : 7 - 10 . DOI: 10.1109/rfic.2019.8701753 http://dx.doi.org/10.1109/rfic.2019.8701753

Kobal E , Siriburanon T , Chen X , et al . A <math id="M74"><msub><mrow><mi>G</mi></mrow><mrow><mi mathvariant="normal">m</mi></mrow></msub></math> https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120460625&type= https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120460641&type= 3.72533321 3.21733332 -boosting technique for millimeter-wave low-noise amplifiers in 28 nm triple-well bulk CMOS using floating resistor in body bi asing [J ] . IEEE Transactions on Circuits and Systems I: Regular Papers , 2022 , 69 ( 12 ): 5007 - 5017 . DOI: 10.1109/tcsi.2022.3200161 http://dx.doi.org/10.1109/tcsi.2022.3200161

Liang C L , Tang B J , Zhao Y , et al . High gain and low power K-band LNA with reversed current-reuse topology [J ] . IEEE Microwave and Wireless Technology Letters , 2023 , 33 ( 12 ): 1638 - 1641 . DOI: 10.1109/lmwt.2023.3317781 http://dx.doi.org/10.1109/lmwt.2023.3317781

Ali S N , Aminul Hoque M , Gopal S , et al . A continually-stepped variable-gain LNA in 65 nm CMOS enabled by a tunable-transformer for mm-wave 5G communications [C ] // 2019 IEEE MTT-S International Microwave Symposium . Piscataway : IEEE , 2019 : 926 - 929 . DOI: 10.1109/mwsym.2019.8701023 http://dx.doi.org/10.1109/mwsym.2019.8701023

Chang J F , Lin Y S . 3.8 mW 26~29 GHz CMOS LNA with 21.6 dB gain and 2.49 dB NF avg using dual self-bias and gain boosting [J ] . IEEE Microwave and Wireless Technology Letters , 2024 , 34 ( 1 ): 72 - 75 . DOI: 10.1109/lmwt.2023.3332753 http://dx.doi.org/10.1109/lmwt.2023.3332753

Du Y Q , Song M Y , Hou X P , et al . A 8~22.8 GHz dual feedback wideband CMOS low-noise amplifier including package effects [J ] . Microelectronics Journal , 2025 , 160 : 106660 . DOI: 10.1016/j.mejo.2025.106660 http://dx.doi.org/10.1016/j.mejo.2025.106660

Li S H , Fritsche D , Szilagyi L , et al . A highly linear 79 GHz Low-Noise Amplifier for Civil-Automotive Radars in 22 nm FD-SOI CMOS with <math id="M75"><mo>-</mo></math> https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120460616&type= https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=120460651&type= 1.69333339 2.28600001 6 dBm IP 1 dB and 5 dB NF [C ] // 2021 16th European Microwave Integrated Circuits Conference . Piscataway : IEEE , 2022 : 1 - 4 . DOI: 10.23919/eumic50153.2022.9783227 http://dx.doi.org/10.23919/eumic50153.2022.9783227

Rajaiyan A , Saberi M . A highly-linear wideband differential low-noise amplifier using derivative superposition technique [C ] // 2022 30th International Conference on Electrical Engineering . Piscataway : IEEE , 2022 : 480 - 484 . DOI: 10.1109/icee55646.2022.9827159 http://dx.doi.org/10.1109/icee55646.2022.9827159

Wu Q , Qi G Z . An 18.6~27.6 GHz high-linear wideband low-noise amplifier based on gate-source and gate-drain magnetically coupled resonators [C ] // 2024 9th International Conference on Integrated Circuits and Microsystems . Piscataway : IEEE , 2024 : 166 - 170 . DOI: 10.1109/icicm63644.2024.10814398 http://dx.doi.org/10.1109/icicm63644.2024.10814398

Zhang H , Sánchez-Sinencio E . Linearization techniques for CMOS low noise amplifiers: A tutorial [J ] . IEEE Transactions on Circuits and Systems I: Regular Papers , 2011 , 58 ( 1 ): 22 - 36 . DOI: 10.1109/tcsi.2010.2055353 http://dx.doi.org/10.1109/tcsi.2010.2055353

Luo J , Shen Y , Peng Y , et al . A 18~33 GHz CMOS LNA with 26.7 dB peak gain and 2.8 dB minimum NF for K/Ka-band applications [J ] . AEU-International Journal of Electronics and Communications , 2024 , 177 : 155175 . DOI: 10.1016/j.aeue.2024.155175 http://dx.doi.org/10.1016/j.aeue.2024.155175

Huang X R , Jia H K , Deng W , et al . 28 GHz compact LNAs with 1.9 dB minimum NF using folded three-coil transformer and dual-feedforward techniques for phased array systems [J ] . IEEE Transactions on Circuits and Systems I: Regular Papers , 2024 , 71 ( 8 ): 3573 - 3583 . DOI: 10.1109/tcsi.2024.3402312 http://dx.doi.org/10.1109/tcsi.2024.3402312

浏览量

213

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

基于InP HEMT工艺的低噪声放大器模块气密性封装

6G（B5G）毫米波通信用高选择性低损耗小型化LTCC滤波器设计与测试方法

基于复合左右手理论的双模态低损耗宽带毫米波片上传输线

无蜂窝毫米波大规模MIMO系统基于深度强化学习的节能睡眠策略

低轨卫星网络自适应随机接入研究