金刚石高压场效应管单粒子效应研究

付裕; 张振东; 钱鹏; 王若琛; 任泽阳; 苏凯; 池雅庆; 张进成; 郝跃

doi:10.12263/DZXB.20260597

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金刚石高压场效应管单粒子效应研究

学术论文 | 更新时间：2026-10-16

- 金刚石高压场效应管单粒子效应研究
- Single-Event Effects in High-Voltage Diamond Field-Effect Transistors
- 电子学报 2026年54卷第6期页码：2649-2656
- 作者机构：
  
  1.西安电子科技大学集成电路学部宽禁带半导体器件与集成技术国家重点实验室，陕西西安 710071
  2.国防科技大学计算机学院，湖南长沙410073
  3.国防科技大学先进微处理器芯片与系统重点实验室，湖南长沙410073
- 作者简介：
  
  付裕男，1993年3月生，重庆人。西安电子科技大学集成电路学部副教授、硕士生导师。主要研究方向为超宽禁带半导体金刚石材料和器件。中国电子学会会员编号：E190157301M。E-mail: fuyu@xidian.edu.cn
  张振东男，1994年6月生，湖南邵东人。国防科技大学计算机学院博士后。主要研究方向为碳基材料及器件可靠性技术。E-mail: zhangzhendong1994@nudt.edu.cn
  钱鹏男，2002年3月生，黑龙江哈尔滨人。西安电子科技大学集成电路学部硕士研究生。主要研究方向为超宽禁带半导体金刚石器件。E-mail: 23111213513 @stu.xidian.edu.cn
  王若琛男，2002年9月生，山东烟台人。西安电子科技大学集成电路学部硕士研究生。主要研究方向为超宽禁带半导体金刚石器件。E-mail: 1209275577@qq.com
  任泽阳男，1991年8月生，山东枣庄人。西安电子科技大学集成电路学部教授、硕士生导师。主要研究方向为超宽禁带半导体金刚石材料和器件。E-mail: zeyangren@xidian.edu.cn
  苏凯男，1988年10月生，陕西铜川人。西安电子科技大学集成电路学部副教授、硕士生导师。主要研究方向为超宽禁带半导体金刚石材料及器件。E-mail: ksu@xidian.edu.cn
  池雅庆男，1982年2月生，重庆人。国防科技大学计算机学院研究员，湖南省宇航学会理事，教育部“高性能微处理器技术”创新团队骨干。主要研究方向为先进集成电路辐射效应与高性能抗辐射微处理器设计。E-mail: yqchi@nudt.edu.cn
  张进成男，1976年7月生，陕西富平人。西安电子科技大学二级教授、博士生导师，西安电子科技大学党委常委、副校长，国家级人才。主要研究方向为宽禁带与超宽禁带半导体器件与集成电路。中国电子学会会员编号：E190008613M。E-mail: jchzhang@xidian.edu.cn
  郝跃男，1958年3月生，安徽阜阳人。中国科学院院士，西安电子科技大学集成电路学部教授、博士生导师。主要研究方向为宽禁带和超宽禁带半导体材料与器件、微纳半导体新器件及可靠性、SoC设计与设计方法学。中国电子学会会员编号：E190008304F。E-mail: yhao@xidian.edu.cn
- 基金信息：
  
  国家自然科学基金(62421005;62404172);National University of Defense Technology Independent Innovation Science Foundation(24-ZZCX-ZXGC-10)
- DOI：10.12263/DZXB.20260597
  中图分类号： TP211+.5;
- 收稿：2026-05-20，
  
  录用：2026-06-01，
  
  纸质出版：2026-06-25
- 稿件说明：
移动端阅览
付裕, 张振东, 钱鹏, 等. 金刚石高压场效应管单粒子效应研究[J]. 电子学报, 2026, 54(06): 2649-2656.

FU Yu, ZHANG Zhendong, QIAN Peng, et al. Single-Event Effects in High-Voltage Diamond Field-Effect Transistors[J]. Acta Electronica Sinica, 2026, 54(06): 2649-2656.
付裕, 张振东, 钱鹏, 等. 金刚石高压场效应管单粒子效应研究[J]. 电子学报, 2026, 54(06): 2649-2656. DOI：10.12263/DZXB.20260597

FU Yu, ZHANG Zhendong, QIAN Peng, et al. Single-Event Effects in High-Voltage Diamond Field-Effect Transistors[J]. Acta Electronica Sinica, 2026, 54(06): 2649-2656. DOI：10.12263/DZXB.20260597

摘要

金刚石凭借其超宽禁带、超高热导率、高击穿场强以及优异的载流子输运和抗辐照潜力等特性，在抗辐照高压功率器件领域具有重要应用前景，尤其适用于空间电源系统、深空探测平台和高能粒子辐射环境下的功率调控单元。然而，针对决定器件在轨可靠性的关键失效模式——单粒子效应，目前国际上尚缺乏关于金刚石场效应管的实验报道，相关失效机制、耐受阈值及瞬态响应特性仍有待系统阐明。本文制备了p沟道氢终端金刚石高压金属-氧化物-半导体场效应晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFET），通过金属化后退火工艺优化了器件的界面质量与电学性能，器件关态击穿电压达-980 V，且漏电水平优于国外同类器件，表明所制备器件具备开展高压偏置辐照验证的基础条件。在此基础上，分别利用Ta离子（LET值为77.6 MeV·cm²/mg）和Kr离子（LET值为37.9 MeV·cm²/mg）开展了重离子单粒子辐照实验，首次从实验上揭示了金刚石FET的单粒子烧毁与单粒子瞬态特性。实验结果表明，器件在200 V工作偏置下，对两种LET值的重离子均未发生单粒子烧毁，抗烧毁LET阈值高于77.6 MeV·cm²/mg，初步验证了金刚石FET在高LET重离子辐照环境下的抗单粒子烧毁潜力；在Ta离子辐照下仅捕获到1次幅值约40 V的瞬态脉冲，在Kr离子辐照下未出现可分辨的瞬态事件，展现出对单粒子效应的强耐受性。本工作为金刚石抗辐照功率器件设计及其空间辐射效应研究提供了关键实验依据，并为后续开展更高偏置、更高LET条件下的器件可靠性评估奠定了基础。

Abstract

Owing to its exceptional properties such as an ultrawide bandgap

ultrahigh thermal conductivity

high breakdown field

as well as excellent carrier transport and radiation resistance potential

diamond holds significant promise for radiation-hardened high-voltage power devices

and is particularly suitable for power regulation units in space power systems

deep space exploration platforms and high-energy particle radiation environments. However

with respect to single-event effects

which represent a critical failure mode governing the on-orbit reliability of devices

experimental reports on diamond field-effect transistors (FETs) remain absent in the international literature

and the relevant failure mechanisms

tolerance thresholds and transient response characteristics still need to be systematically clarified. In this work

p-channel hydrogen-terminated diamond high-voltage metal-oxide-semiconductor FETs (MOSFETs) are fabricated

and a post-metallization annealing process is employed to improve the interface quality and electrical performance. The devices achieve an off-state breakdown voltage of -980 V with a leakage level superior to that of comparable devices reported abroad

indicating that the fabricated devices have the basic conditions for carrying out high-voltage bias irradiation verification. Based on this foundation

heavy-ion single-event irradiation experiments using Ta ions (LET = 77.6 MeV·cm²/mg) and Kr ions (LET = 37.9 MeV·cm²/mg) are carried out

revealing for the first time the single-event burnout and single-event transient characteristics of diamond FETs experimentally. The experimental results demonstrate that under a bias of 200 V

no single-event burnout occurred for either ion species

and the burnout threshold exceeds 77.6 MeV·cm²/mg

preliminarily verifying the single-event burnout resistance potential of diamond FETs in high-LET heavy-ion irradiation environments. Only one transient pulse with an amplitude of approximately 40 V is captured during Ta-ion irradiation

whereas no discernible transient events were observed under Kr-ion irradiation

indicating a strong tolerance to single-event effects. This work provides a key experimental basis for the design of radiation-hardened diamond power devices and the investigation of their space radiation effects

and lays a foundation for subsequent reliability evaluation of devices under higher bias and higher LET conditions.

关键词

Keywords

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