柔直换流阀用4.5 kV IGBT器件大气中子辐射失效率物理建模

杨柳; 梁世维; 周月宾; 饶宏; 涂欣易; 姚茗瀚; 徐启扬; 黄守道; 彭超

doi:10.12263/DZXB.20260930

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柔直换流阀用4.5 kV IGBT器件大气中子辐射失效率物理建模

更新时间：2026-10-13

- 柔直换流阀用4.5 kV IGBT器件大气中子辐射失效率物理建模
- Physical Modeling of Atmospheric Neutron Radiation-Induced Failure Rate in 4.5 kV-Rated IGBT for Converter Valves in VSC-HVDC System
- 电子学报 2026年页码：1-11
- 作者机构：
  
  1.湖南大学国家卓越工程师学院，湖南长沙 410082
  2.湖南大学电气与信息工程学院，湖南长沙 410082
  3.直流输电技术全国重点实验室（南方电网科学研究院有限责任公司），广东广州 510663
  4.海上风力发电装备与风能高效利用全国重点实验室，湖南长沙 410082
  5.工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室，广东广州 511370
- 作者简介：
  
  杨柳女，1989年出生于河南省驻马店市。现为南方电网科学研究院有限责任公司教授级高级工程师，湖南大学在读博士研究生。主要研究方向为大功率电力电子、柔性直流输电及功率器件可靠性。兼任全国电工电子产品可靠性与维修性标准化技术委员会委员。E-mail: yangliu3@csg.cn
  梁世维男，1993年出生于湖南省泸溪县。现为湖南大学电气与信息工程学院副教授、博士生导师。主要研究方向为宽禁带功率芯片设计与制备，功率器件测试分析、建模、可靠性，空间电源等。IEEE Member，担任多个电力电子与功率半导体领域国际期刊审稿人。E-mail: swliang@hnu.edu.cn
  周月宾男，1987年出生于陕西省渭南市。现为南方电网科学研究院有限责任公司高级工程师，博士。主要研究方向为直流输电与电力电子技术。兼任全国电工术语标准化技术委员会委员，长期从事高压直流输电及柔性直流输电技术与工程应用研究。E-mail: zhouyb@csg.cn
  饶宏男，1961年出生于湖北省武汉市。现为中国工程院院士、教授级高级工程师。主要研究方向为高压直流输电、柔性直流输电及交直流电网安全运行技术。长期从事直流输电重大工程及交直流电网运行领域的系统研究、设计和建设工作，2021年当选中国工程院院士。E-mail: raohong@csg.cn
  涂欣易女，2003年出生于湖北省宜昌市。现为湖南大学硕士研究生。主要研究方向为功率半导体器件可靠性及辐射效应。E-mail: tuxinyi0321@163.com
  姚茗瀚男，2000年出生于辽宁省本溪市。现为南方电网科学研究院有限责任公司助理工程师。主要研究方向为功率半导体器件设计、测试及可靠性。E-mail: yaominghan@csg.cn
  徐启扬男，2003年出生于安徽省池州市。现为湖南大学硕士研究生。主要研究方向为功率半导体器件可靠性及辐射效应。E-mail: m15715664985@163.com
  黄守道男，1962年出生于郴湖南省州市。现为湖南大学二级教授、博士生导师，海上风力发电装备与风能高效利用全国重点实验室主任。主要研究大型风力发电技术、特种永磁电机及电力电子系统。获国家技术发明二等奖1项、国家科技进步一/二等奖5项。E-mail: hsd1962@hnu.edu.cn
  彭超男，1994年出生于湖南省常德市。现为工业和信息化部电子第五研究所正高级工程师。主要研究方向为半导体器件辐射可靠性、辐射效应试验测试及失效机理。长期从事SOI器件、功率半导体器件中子辐照及辐射诱导失效研究。E-mail: pengchao@ceprei.com
- 基金信息：
  
  国家自然科学基金(U25B6015)
- DOI：10.12263/DZXB.20260930
  中图分类号： TN302;TM46
- 收稿：2026-08-12，
  
  录用：2026-08-30，
  
  网络首发：2026-10-13，
- 稿件说明：
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杨柳, 梁世维, 周月宾, 等. 柔直换流阀用4.5 kV IGBT器件大气中子辐射失效率物理建模[J/OL]. 电子学报, 2026,1-11.

YANG Liu, LIANG Shiwei, ZHOU Yuebin, et al. Physical Modeling of Atmospheric Neutron Radiation-Induced Failure Rate in 4.5 kV-Rated IGBT for Converter Valves in VSC-HVDC System[J/OL]. ACTA ELECTRONICA SINICA, 2026, 1-11.
杨柳, 梁世维, 周月宾, 等. 柔直换流阀用4.5 kV IGBT器件大气中子辐射失效率物理建模[J/OL]. 电子学报, 2026,1-11. DOI： 10.12263/DZXB.20260930.

YANG Liu, LIANG Shiwei, ZHOU Yuebin, et al. Physical Modeling of Atmospheric Neutron Radiation-Induced Failure Rate in 4.5 kV-Rated IGBT for Converter Valves in VSC-HVDC System[J/OL]. ACTA ELECTRONICA SINICA, 2026, 1-11. DOI： 10.12263/DZXB.20260930.

摘要

高海拔地区柔性直流输电系统中的绝缘栅双极晶体管（Insulated Gate Bipolar Transistors，IGBT）长期承受较高阻断电压，易受到大气中子辐射诱发的单粒子烧毁（Single-event Burnout，SEB）威胁，其失效率的准确评估直接关系到换流阀器件选型、运行降额和安全裕度设计。现有失效率模型多依赖经验拟合或单一修正因子，难以同时描述海拔环境与偏置电压对器件辐射失效的耦合作用。本文依托中国散裂中子源（China Spallation Neutron Source，CSNS）大气中子辐照谱仪（Atmospheric Neutron Irradiation Spectrometer，ANIS），对两类4.5 kV IGBT在多组偏置电压和等效海拔条件下开展大气中子加速辐照试验，以漏电流达到10 mA作为失效判据，并依据JEDEC JESD89A和GB/T 4937.44-2025/IEC 60749-44.2016计算自然环境失效率及95%置信区间。在此基础上，首先依据国际标准大气模型建立“海拔高度—大气密度—中子通量”关系；随后结合高压阻断状态下中子诱发二次带电粒子的电荷沉积、载流子漂移、局部电场重构、碰撞电离、雪崩倍增及电热反馈过程，采用局部电场失效概率描述高场敏感区的主导作用，并以二次泰勒展开表征重构峰值电场随偏置电压的非线性增强，最终构建海拔环境项与电压器件响应项耦合的大气中子辐射失效率物理模型，利用试验数据完成关键参数提取。试验结果表明，两类IGBT的失效率均随海拔升高和偏置电压增加显著上升，且不同器件表现出明显的结构敏感性。模型验证结果显示，IGBT-A预测绝对误差不超过0.01 FIT、相对误差不超过0.90%；IGBT-B预测绝对误差不超过0.01 FIT、相对误差不超过0.51%。进一步基于模型获得了不同海拔和偏置电压共同作用下的失效率分布及1 FIT安全工作边界，可为高海拔柔直换流阀中IGBT的可靠性评估、电压降额和运行安全设计提供定量依据。

Abstract

Insulated gate bipolar transistors (IGBTs) employed in high-altitude voltage-source-converter high-voltage direct-current (VSC-HVDC) transmission systems are continuously subjected to high blocking voltages and are therefore particularly vulnerable to atmospheric-neutron-induced single-event burnout (SEB). Accurate evaluation of the corresponding radiation-induced failure rate is essential for device selection

voltage derating

reliability assessment

and safety-margin design of converter valves. However

most existing failure-rate models are based on empirical fitting

manufacturer-specific correction factors

or simplified single-variable scaling relations

and consequently have limited capability to simultaneously describe the coupled effects of altitude-dependent atmospheric neutron exposure and bias-voltage-dependent device response. To address this limitation

accelerated atmospheric-neutron irradiation experiments were carried out on two types of 4.5 kV IGBTs using the Atmospheric Neutron Irradiation Spectrometer (ANIS) at the China Spallation Neutron Source (CSNS). The devices were tested under multiple blocking-voltage and equivalent-altitude conditions

with a leakage current of 10 mA adopted as the failure criterion. According to JEDEC JESD89A and GB/T 4937.44-2025/IEC 60749-44.2016

the accumulated neutron fluence and number of failed samples were converted into failure rates under the natural atmospheric environment

and 95% confidence intervals were further calculated to quantify the statistical uncertainty of the experimental results. Based on the irradiation data and the underlying radiation-response physics

a physics-based atmospheric-neutron-induced failure-rate model was established. First

the relationship among altitude

atmospheric density

and neutron flux was derived from the International Standard Atmosphere

thereby representing the variation in the external neutron environment caused by the reduction in atmospheric shielding with increasing altitude. Second

the voltage-dependent device response was formulated by considering the physical sequence following the generation of neutron-induced secondary charged particles under high-voltage blocking conditions

including localized charge deposition

carrier drift

electric-field reconstruction

impact ionization

avalanche multiplication

and electrothermal feedback. Because the probability of SEB is predominantly governed by localized high-field regions rather than by the relatively weak field in the central region of the device

a local-electric-field-dependent failure probability was introduced to describe the contribution of the sensitive high-field region. In addition

the nonlinear enhancement of the reconstructed peak electric field with increasing bias voltage was represented using a second-order Taylor expansion

from which a voltage-dependent device failure cross section was derived. Finally

the altitude-dependent neutron-flux term was coupled with the voltage-dependent device-response term to construct a unified altitude–voltage-dependent failure-rate model

and the key model parameters were extracted from the experimental data. This formulation explicitly separates the external radiation exposure from the intrinsic susceptibility of the device while retaining their coupled contribution to the overall failure rate

thereby establishing a direct physical correspondence among altitude-induced neutron-flux enhancement

voltage-induced electric-field intensification

and the resulting increase in SEB probability. The experimental results show that the atmospheric-neutron-induced failure rates of both IGBT types increase markedly with increasing altitude and blocking voltage

while the two devices exhibit clear structure-dependent radiation sensitivities. Model validation shows excellent agreement between the predicted and measured failure rates over the investigated operating range. For IGBT-A

the absolute prediction error is below 0.01 FIT and the relative error does not exceed 0.90%; for IGBT-B

the absolute prediction error is also below 0.01 FIT and the relative error does not exceed 0.51%. On the basis of the validated model

failure-rate distributions under the combined effects of altitude and bias voltage were further obtained

and the corresponding 1-FIT safe-operating boundaries were determined. The proposed model provides a physically interpretable and quantitatively accurate framework for extrapolating accelerated irradiation results to practical high-altitude operating conditions and offers a theoretical basis for reliability assessment

voltage derating

and operational safety-margin design of 4.5 kV IGBTs in VSC-HVDC converter valves.

关键词

Keywords

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