SiC JFET与SiC MOSFET失效模型及其短路特性对比

doi:10.3969/j.issn.0372-2112.2019.03.030

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电子学报 ›› 2019, Vol. 47 ›› Issue (3) : 726-733. DOI: 10.3969/j.issn.0372-2112.2019.03.030

学术论文

SiC JFET与SiC MOSFET失效模型及其短路特性对比

周郁明, 刘航志, 杨婷婷, 陈兆权

作者信息 +

Failure Models and Comparison on Short-Circuit Performances for SiC JFET and SiC MOSFET

ZHOU Yu-ming, LIU Hang-zhi, YANG Ting-ting, CHEN Zhao-quan

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文章历史 +

摘要

建立了两种碳化硅（SiC）器件JFET和MOSFET的失效模型.失效模型是在传统的电路模型的基础上引入了额外附加的泄漏电流，其中，SiC JFET是在漏源极引入了泄漏电流，SiC MOSFET是在漏源极和栅极引入了泄漏电流；同时，为了体现温度和电场强度与失效的关系，用与温度和电场强度相关的沟道载流子迁移率代替了传统电路模型所采用的常数迁移率.有关文献的实验结果和半导体器件的计算机模拟（Technology Computer Aided Design，TCAD）验证了两种SiC器件失效模型的准确性.所建立的失效模型能够对比SiC JFET和SiC MOSFET的短路特性.

Abstract

The failure models of SiC JFET and SiC MOSFET have been developed.Based on the conventional circuit models of SiC JFET and SiC MOSFET,the additional leakage currents between the electrodes are introduced.For SiC JFET,the leakage current between the drain and the source is considered.For SiC MOSFET,two leakage currents are considered,one is the current between the drain and the source,another is the additional leakage current of the gate.Furthermore,the mobility dependent on the temperature and the electric-field strength replaces the constant mobility in conventional circuit models.The results from other experimental works and TCAD simulations verify the failure models of SiC JFET and SiC MOSFET.The developed failure models can be used to compare the short-circuit performances of SiC JFET and SiC MOSFET.

导出引用

周郁明, 刘航志, 杨婷婷, 陈兆权. SiC JFET与SiC MOSFET失效模型及其短路特性对比[J]. 电子学报, 2019, 47(3): 726-733. https://doi.org/10.3969/j.issn.0372-2112.2019.03.030

ZHOU Yu-ming, LIU Hang-zhi, YANG Ting-ting, CHEN Zhao-quan. Failure Models and Comparison on Short-Circuit Performances for SiC JFET and SiC MOSFET[J]. Acta Electronica Sinica, 2019, 47(3): 726-733. https://doi.org/10.3969/j.issn.0372-2112.2019.03.030

中图分类号： TN386.1

参考文献

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