Homoepitaxial Growth of <italic style="font-style: italic">β</italic>-Ga<sub>2</sub>O<sub>3</sub> Single Crystal: Recent Progress

SUN Xuan; LIU Jiyuan; JIN Zhu; XIA Ning; ZHANG Hui; YANG Deren

doi:10.12263/DZXB.20250922

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Homoepitaxial Growth of β-Ga₂O₃ Single Crystal: Recent Progress

更新时间：2026-03-26

- Homoepitaxial Growth of β-Ga₂O₃ Single Crystal: Recent Progress
- ACTA ELECTRONICA SINICA Pages: 1-22(2026)
- 作者机构：
  
  1.浙江大学材料科学与工程学院硅材料国家重点实验室，浙江杭州 310027
  2.浙江大学杭州国际科创中心，浙江杭州 311200
  3.杭州镓仁半导体有限公司，浙江杭州 311200
- 作者简介：
- 基金信息：
  
  National Key Research and Development Program of China(2024YFE0205300);National Natural Science Foundation of China(22205203);Zhejiang Provincial Postdoctoral Research Project Excellence Funding(ZJ2024079);Natural Science Foundation of Zhejiang(LZ25E070001);Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(TD2022012)
- DOI：10.12263/DZXB.20250922
  CLC： TN304;
- Received：14 November 2025，
  
  Accepted：05 December 2025，
  
  Online First：09 March 2026，
- 稿件说明：
移动端阅览
SUN Xuan, LIU Jiyuan, JIN Zhu, et al. Homoepitaxial Growth of β-Ga₂O₃ Single Crystal: Recent Progress[J/OL]. ACTA ELECTRONICA SINICA, 2026, 1-22.
DOI：

SUN Xuan, LIU Jiyuan, JIN Zhu, et al. Homoepitaxial Growth of β-Ga₂O₃ Single Crystal: Recent Progress[J/OL]. ACTA ELECTRONICA SINICA, 2026, 1-22. DOI： 10.12263/DZXB.20250922.

摘要

超宽禁带半导体因其带隙宽度大、击穿场强高、物理化学稳定性强等优势，在消费电子、新能源、航空航天、国防军工等领域展现出了巨大的发展潜力，正日益成为全球半导体产业的研究热点和战略发展方向。在众多超宽禁带半导体材料中，氧化镓（Ga₂O₃），特别是其热力学稳定的

相（

-Ga

），凭借4.8~5.3 eV的超宽禁带宽度，8 MV/cm的超高临界击穿电场强度，以及超过3 400的巴利加优值，在10 kV以上的超高压功率器件和高响应度光电器件领域中优势显著。这些卓越的物理性能赋予了

-Ga

在电力转换、射频系统、深紫外探测等应用中的独特地位，被视为推动能源效率提升和电子设备小型化的关键材料之一。本文聚焦

-Ga

材料体系，系统介绍了其同质外延生长技术的研究进展。高质量单晶衬底的制备是

-Ga

走向应用的基础，目前主流的生长技术包括导模法、铸造法、垂直布里奇曼法以及直拉法等，本文对此进行了介绍。在获得高质量衬底后，外延生长技术成为调控材料性质与器件功能的核心环节。分子束外延（Molecular Beam Epitaxy， MBE）、卤化物气相外延（Hydride Vapor Phase Epitaxy， HVPE）、金属有机化学气相沉积（Metal Organic Chemical Vapor Deposition， MOCVD）、脉冲激光沉积（Pulsed Laser Deposition， PLD）、雾化化学气相沉积（Mist Chemical Vapor Deposition， Mist-CVD）和氧化物气相外延（Oxide Vapor Phase Epitaxy， OVPE）是目前同质外延

-Ga

的主要技术路径。本文对这些外延技术的特征差异与发展现状进行了阐述，并特别针对（100）、（010）和（001）等

典型晶向的同质外延生长特性进行了介绍，晶向选择对外延层的表面形貌、缺陷类型及电学性能具有决定性影响。通过深入探讨不同晶面外延层的晶体质量、缺陷形成机制与器件性能的关联性，揭示了点缺陷、线位错以及面缺陷如何影响器件的性能。本文不仅为

-Ga

功率器件的材料制备提供理论指导，更为超宽禁带半导体材料的产业化应用提供了技术参考与发展思路。随着全球对高效能源转换和先进电子系统的需求不断增长，

-Ga

的研究正从实验室走向实际应用，其在智能电网、电动汽车、通信基站等领域的潜力日益凸显，推动半导体技术向更高功率、更高频率和更恶劣环境适应性的方向迈进，为全球科技进步与产业升级注入新动力。

Abstract

Ultra-wide bandgap (UWBG) semiconductors

due to their advantages such as wide bandgap

high breakdown field strength

and strong physicochemical stability

have demonstrated enormous development potential in fields like consumer electronics

new energy

aerospace

and national defense

and are increasingly becoming a research hotspot and strategic development direction in the global semiconductor industry. Among the many UWBG semiconductor materials

gallium oxide

particularly its thermodynamically stable

phase (

-Ga

)

with its ultra-wide bandgap width of 4.8~5.3 eV

ultra-high critical breakdown electric field strength of 8 MV/cm

and Baliga’s figure of merit exceeding 3 400

shows significant advantages in the fields of ultra-high-voltage power devices above 10 kV and high-responsivity photoelectric devices. These outstanding physical properties endow

-Ga

with a unique position in applications such as power conversion

radio frequency systems

and deep ultraviolet detection

making it regarded as a key material for promoting energy efficiency improvement and miniaturization of electronic devices. This article focuses on the

-Ga

material system and systematically introduces the research progress in its homoepitaxial growth technology. The preparation of high-quality single-crystal substrates is the foundation for the application of

-Ga

. Currently

mainstream growth technologies include

the edge-defined film-fed growth method

the casting method

the vertical bridgman method and the czochralski method

which are introduced in this article. After obtaining high-quality substrates

epitaxial growth technology becomes the core link in regulating material properties and device functions. Molecular beam epitaxy (MBE)

halide vapor phase epitaxy (HVPE)

metal organic chemical vapor deposition (MOCVD)

pulsed laser deposition (PLD)

mist chemical vapor deposition (Mist-CVD)

and oxide vapor phase epitaxy (OVPE) are currently the main technological paths for

-Ga

homoepitaxy. This article elaborates on the characteristic differences and development status of these epitaxial technologies. This article specifically introduces the homoepitaxial growth characteristics of typical crystal orientations such as (100)

(010)

and (001). The choice of crystal orientation has a decisive influence on the surface morphology

defect types

and electrical properties of the epitaxial layer. In-depth exploration of the correlation between the crystal quality

defect formation mechanisms

and device performance of epitaxial layers on different crystal planes reveals how point defects

line dislocations

and planar defects affect device performance. This review not only provides theoretical guidance for the material preparation of

-Ga

power devices but also offers technical references and development ideas for the industrial application of ultra-wide bandgap semiconductor materials. With the growing global demand for efficient energy conversion and advanced electronic systems

research on

-Ga

is moving from the laboratory to practical applications. Its potential in fields such as smart grids

electric vehicles

and communication base stations is becoming increasingly prominent

driving semiconductor technology toward higher power

higher frequency

and greater adaptability to harsher environments

thereby injecting new momentum into global technological progress and industrial upgrading.

关键词

Keywords

references

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Homoepitaxial Growth of β-Ga2O3 Single Crystal: Recent Progress

DOI：10.12263/DZXB.20250922

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Homoepitaxial Growth of β-Ga₂O₃ Single Crystal: Recent Progress