摘要:It is Proved that 2n functional vectors DXmi (m =0, 1, 2, …, n; i =1l, 2,…, Cnm), belonging to the D transformation set{DFn} of the vector space {Fn}of N-ary logical functions, constitute a cpmplete set of orthogonal bases for {DFn}. Some properties of {f(8)} that is the projection of {DFn} onto these orthogonal bases are examined, and the problem of orthogonal expansion of D (Fn⊕CLμ), the D transformation of (Fn⊕CLu) which is the digital modulation of a sequence CLμ with μtimes clock frequency by Fn, was studied as well. Two approachs to obtain {f(s)} have been given in this paper.As oneapplication of the orthogonal expansion of D transformation, much attention also has been given to the derivation of normalized autocorrelation functions and normalized power spectral density functions of DFn and D(Fn⊕CL), where Fn is a combined code with n PN codes being prime each other in period and CL is the code clock. By using the expressions derived in this paper, extremely simple arithmetic operations are sufficient to obtain the above mentioned two types of functions of particular PN combined codes f (s). It’s possible to realize any complicated logical operation by means of the ALU in a general-purpose computer when this method of orthogonal expansion with D transformation is applied.
摘要:Elliptical waveguides find their use in such new kind of equipments as the earth station in satellite communication. The basic theory of elliptical waveguides appeared in 1938. We now supply the formulae for calculating the power carrying capacity of the elliptical waveguides and for matching it to the rectangular Waveguide. We supply also the normalized attenuation of the elliptical waveguides by new corrected formulae, equations (28) and (29), different from those of[2 ].
摘要:In this paper, we present a concise device physics theory for I2L family. The core of the integrated injection logic family which includes I2L, I3L, S2L, SFL, SI2L and 3JL etc., is composed of three mutually interactive PN junctions.By making use of the’Total Number of Excess Minority Carriers"mothod, and starting from the integral form of the continuity equation, we shall relate the terminal current of I2L with the total mumber of excess carriers, which are functions of the junction voltages. The theory can be used to compute the recombination losses of various regions. The culculated results can be used to understand and to design the I2L family, and the parameters are also measurable from the circuit characteristic point of view.Taking the I2L LSI or VLSI as a single device, We can specify and measure the static input and output characteristics.It exhibits various regions of operation.For each of these various modes of operation, we can simplify the analysis, and obtain, with appropriate approximation, simple equivalent circuits, which can be used for CAD.The Eber-Moll and Gummel-Poon models are useful for junction transistors. However, these models are insufficient for three mutually interactive junctions. Especially for the dynamic behavior of I2L, it is necessary to consider the building up or decaying of the "Total Number of Excess Carriers" in the entire I2L. The charging and discharging currents are no more constants as that has been assumed in the "Charge control" theory. Simplified equations will be given for the dynamic analysis of I2L. This analysis provides useful basic principles for the device design theory and the circuit design theory.
摘要:This paper presents two steps for synthesis when transfer zeros are complexes, the firststep——a ladder network with negative elements is formed by expansion in a method generalized fromBrune’s, the second step——an equivalent network without negative element is derived. The theorem ofladder expansion is given, which analyzes a series of properties in the ladder expansion. This theorem has been proved. Three kinds of equivalent sub-network are given: three-element network, a network without magnetic coupling and Darlington D type network. A series of problems associated with synthesis have been discussed. An example is given for this new method.
摘要:Experimental result of microwave Li-Mg ferrites is reported. These ferrites are fabricated by substituting (Mg2+Ti4+)1/2for Fe3+ ions in the Li ferrites and suitably adding some other metallic ions. This Li-Mg ferrite system is characterized by simultaneously high remanence ratios, low coercivity, low microwave loss and high peak power capacity. The saturation magnetization 4π Ms of this system may be adjusted between 200-3000Gs with dielectric loss tgδe = 2-9×10-4 and peak power handling capacity above one megawatt.
摘要:Nonlinearity in automatic gain control (AGO systems is an interesting problem. AGC systems are different from general control systems, for nonlinearity i:, contained in the executors. For first order with constant signal amplitude, we analyze the nonlinear discrete systems by means of a state transition method and present graphically the process of state transition, or the dynamic process. For higher order and in the case of fluctuating signal amplitude, we make the AGC systems equivalent to a "standard" control system, which is easy to analyze. This equivalence is vaiid strictly for both discrete and continuous systems.We present a method of linearizing AGC systems, that is, we transform the AGC systems with serious nonlinearity into a linear system by using a logarithmic amplifier as a nonlinear corrector.At last, based on above analyses, two possible applications are presented. In one, the logarithm of signal amplitude is implemented digitally on the principle of A.GC. In the other, a proposition, with which a logarithmic amplifier is employed for open-loop gain control, is given.
摘要:The non-crystalline stute silicon is used as emitter material for bipolar microwave power transistor. By means of the ballast effect of the vertical resistor of this non-crystalline Si layer, inject current crowding at emitter edge can be overcome. The ratio of effectual emitter area to base area of a FFJ is 2-3 times greater than a usual transistor and the output power-impedance product is 5-10 times greater.The emitter-base junction capacitance of the FFJ is only decided by it’s emitter doping profiles, so that both smaller base resistance rb and higher emitter cutoff frequency can simultaneously be obtained. The value of fmax is 3-5 times greater than the usual transistor.
摘要:The concept of mechanical invention is introduced and its realizability is discussed. It is shown that the framework analysis program can be used as the basis of an alogorithm program in mechanical invention.
摘要:In many signal processing applications the original signals are usually transformed to some other forms which are more appropriate for processing or are otherwise more desirable. Most of them are linear transforms, such as convolution and matched filtering. A transversal filter has the capability of highly parallel operation, as it can perform a large amount of weighted sum operations simultaneously. Therefore, it is especially suitable to perform various linear transforms. Particularly, the transversal filters, implemented by CCD and SAW devices in sample analog and analog forms, have higher speed of transform, higher packing density and lower power consumption. This paper summarizes the various linear transforms which can be implemented by transversal filters, including chirp-z transform, sliding chirp-z transform, prime transform, discrete cosine transform, discrete cosine prime transform and two dimensional chirp-z transform. This paper also makes some predictions about possible trends in this field in the near future.