摘要:D. C.and A. C. characteristics of non-ideal operational amplifiers are examined from a general viewpoint, and a set of useful expressions and conclusive results are obtained. The suggested linear approximation model takes into considerations the effects of CMR in a more reasonable manner in comparison with the commonly-used models. The constraints on the linear approximation of OP’s in A.C.case are discussed. Besides the slew rate limitdE/dt|max or the full power bandwidth ωp, there may be otherrestrictions such as d2E/dt3, etc. In some cases, the frequency response of CMR may influences thetransfer characteristics of closed loop OP’s. The useful range over which the previous expressions are valid were given. Finally, the suppression of supply noise, the measurements of high frequency gain and other problems are analysed.
摘要:The realization of dissipative reactance two-port networks is proceeded by combining network system of ZRZLZCT and concept of predistortion of ideal two-port networks. This has presented a clearer physical understanding and has led to some significant results. In addition, new ideas and methods hive been suggested in the formulation of the transfer function and in the solution of open-circuit impedance parameters. With simple termination impedances at two-ports, formula have been obtained for the calculation of parameters of open-circuit impedances.
摘要:The author has expanded the results in reference[1], where the effect of transverse components in the magnetic field of slot was not taken into consideration to simplify the problems. Based on the modified inter-boundary conditions, relevent coupled wave equations have been obtained for the slot-coupled system. At cut-off resonance points, first-order approximate solutions are in agreement with the results as shown in ref. [1]. However, at the slot-resonance points, theoretical analysis and experiments have confirmed that strong coupling would occur in the slot-coupled system owing to slot-resonance. By the use of such phenomenum,it is possible to design microwave devices with very short lengths.
摘要:By the use of (C4H7N2O2) 2Ni as original material and hydrogenation technique, coated powder nickel carbonate has been obtained as a kind of electron emission material. This simple method has led to stable and large production of CPC powder without causing any harm or pollution. Experimental results have been presented.
摘要:New constructions of microwave ferrite latching polarizers with both internal and external return paths are suggested. The switching time of the former is a few microseconds, and that of the latter is tens of microseconds. Detailed theoretical analysis and calculations have been made and methods for improving the performance (broadband and high-power operation, etc)of these polarizers have been conceived. It has been shown that the experimental results are in good agreement with the theoretical analysis.
摘要:By assuming engineering approximation and using theorem[1] for orthogonal expansion of D(Fn⊕CLm), which is the D-transform of Fn⊕CLm, general expressions of normalized autocorrelation function and normalized power spectral density function of Fn⊕CLm have been derived, where Fn⊕CLm is the digital modulation of the combined code by a square wave with a frequency M times that of the clock frequency. Engineering design examples have also been given.
摘要:The surface structure and mass transport of silicon diffused from the boron nitride planar source were examined by means of trasmission infrared spectroscopy, scanning electroscope, eltipsometer and four probe measurements, etc. It was found experimentallythat the prediffused silicon surface wascomposed of unreactive deposited HBO21layer——boron silicon glass layer——Si-B phase layer. This surfacesystem, especially the structure and properties of the Si-B phase, changes with diffusion conditions. For the mechanism of the surface process, an analysis based on the general principles of boron doping was given. The conclusion was that the formation of different surface systems result from diffusion control surface reaction. By means of this, phenomena observed in various experiments can be explained.
摘要:We propose to introduce two new electromagnetic unit systems, in place of the Gauss unit system, to be used in conjunction with the rationalized MKS unit system. They are both CGS systems called CGSE system and CGSM system respectively, and therefore they are both as convenient for dealing with theoretical problems as the Gauss system, and yet, when expressed in them, the Maxwell equations, etc., take on the same form as when the rationalized MKS system is used, if suitable values for ε0 andμ0 are adopted. This is indeed quite an advantage. Derivations are given to clarify the points.
摘要:This paper discusses the linearity of the dual ramp A-D converters. A formula of linearity is obtained, which differs from the conclusion given by D. Wheable.
摘要:CW Nd-YAG laser was used to investigate annealing behavior of <100> Si implanted with Bi ions. The backscattering and channeling measurments indicated that CW Nd-YAG laser annealing is one of nonmelting solid phase epitaxial regrowth process, which optimizes complete recovery of lattice damage and high substitutibility of Bi atoms without impurity redistribution. The experimental results were compared with pulsed Q-switched laser annealing, which induced surface layer melting and impurity redistribution.
摘要:: The source-emitter coupled trigger, which consists of a FET and a bipolar transistor, possesses extremely small triggering current(《1μA). In this paper, an analysis of the circuit was made,a theoretical formula was given to determine the triggering level, and the possibility of achieving triggering level with zero temperature coefficient was confirmed.It was found that the trigger would exhibit a memory property for Ipss >Us/Rs [1 - (Us/ |Ur| )]Z. This feature makes it possible to design a non-reversible triggering circuit.The theoretical analysis agrees with experimental results.
摘要:The design data for coupled microstrip lines on any dielectric substrate material can be determined directly and accurately from those for microstrip lines with known dielectric substrate material with the design data of a single microstrip line being used in an intermediate design stage. The results obtained were presented in the form of simple formulas and compared with computer calculated results.This method can also be used directly to determine the design dimensions from odd and even mode impedances.
摘要:The experimental results on fabricating the bipolar ECL silicon IC by ion implantation are reported. The resistor and transistor base doping has been accomplished by implanted boron, while the emitter doping by implanted phosphorus. The average delay time per gate of the sample circuit is typically 2 ns.Tbe present paper is devoted to describe the effect of the implanted energy, dose, and annealing temperature and time on electrical characteristics of circuit components.