最新刊期

    3 1980
    • Average Mobility of Carriers in the Nonhomogeneous Doped Layers

      Xu Ju-yan Wang Li-mo
      Issue 3, Pages: 1-13(1980)
      摘要:The general relationship between average mobility of carries and average conductivity in a doped layer with an arbitrary impurity distribution has been established.Assuming that all impurities have been ionized, the formulas of the relationship between average mobility of carriers and parameters of doping in the sub-diffused layers have been derived for complementary error and Gaussian impurity concentration distribution. The formulas can be extensively used to any semiconductor materials. The average mobility value of carriers in the Si sub-diffused layers as a function oE surface concentration have been calculated by means of Irvin’s curves. The results are shown graphically for engineering application. The expressions for sheet resistivity of sub-diffused layers in terms of average mobility of carriers are analysed and discussed. It is found that, if the surface concentration is one order of magnitude larger than the background concentration, the average mobility of carriers in all-diffused layers depends only on the surface concentration, and it can be approximately represented byThe curves which are directly used to determine surface concentration from measured sheet resistivity-value are achieved. Considering the nonhomogeneous diffused layers, the design formulas for squeezed resistance in integrated circuits and base resistance in transistors are represented by average mobility of carriers.  
        
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      更新时间:2025-12-08
    • Design and Implementation of the PASCAL-655 Self-Compiling System

      王义诚, 陈涵生, 王家增, 邵臻浩
      Issue 3, Pages: 14-24(1980)
      摘要:This paper describes the procedure in which the PASCAL-655 self-compiling system is established, and explains some important problems about this system, such as the principles for determining its programming language, the implementation of compilation and the process of self-compiling. The design of its object program and translation of its expression are especially discussed. This system is all written in its own language and has been successfully implemented in the 655 computer.  
        
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      更新时间:2025-12-08
    • Electron-optical Transfer Function of the Cathode Lens

      Zhu Ke-zheng
      Issue 3, Pages: 25-36(1980)
      摘要:According to the theory of the cathode lens, the formulas of monochromatic electron-optical transfer function(ETF) and of multichromatic ETF under Beta and Maxwell distributions are derived from the formula of first order lateral aberration. Considering the effects of spectral distributions of incident light and photocathode response, the ETF’s formula for multicolour light is also given, if the system’s object surface is a photocathode. These formulas including off-focus parameters can be used to study the ETF’s off-focus properties in the image space of the cathode lens. For sharp-focusing system, the expressions for the position of optimum image plane and its corresponding ETF are also given. It has been proved that by substituting the corresponding off-focus parameter the above formulas can be-used to describe the ETF of proximity system. And still simpler approximate formulas of ETF are obtained. Furthermore, the expressions for rms values of first order lateral aberration and the relationship-between the low frequency ETF and the current density distribution function of a point image are derived s o as to make the ETF organically related with other parameters of image quality.  
        
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      更新时间:2025-12-08
    • An Analysis of Phased Circular Array Antenna of Crossed-Loop Elements

      Liu Zhen-wei
      Issue 3, Pages: 37-49(1980)
      摘要:The phased circular array antenna of crossed-loop elements is a small-sized transportable high frequency wide band multibeam receiving antenna with operation band at 3 to 30MHz. Its reception performance is equivalent to twenty or thirty rhombic antennas, as a number of independent directional wave beams can be introduced by Phasing networks. Moreover, it only requires just one tenth of the space for rhombic antenna, because vertical loop element used will not require great installation height, thus reducing first Fresnel region to form a low-elevation main lobe.The paper discusses following theoretical aspects of the said antenna: far-zone radiation field, a direction-controlled weighting factor for crossed-loop element radiation pattern, the dual-direction properties, space radiation patterns, structure of central phasing networks to form multi-directional beams and the mutual coupling problem between array elements.  
        
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      更新时间:2025-12-08
    • Xu Yan-sheng Chen Jing-xiong
      Issue 3, Pages: 50-54(1980)
      摘要:In this paper the dominant modes (quasi TE11mode) in circular waveguides filled completely or partially with tangentially magnetized ferrite are studied for the general case-the diagonal components of permeability tensor μr =μz≠μθ. It is found that the characteristic equations for right hand and left hand circularly polarized waves are identical. Consequently, there exists no difference between the propagation constants of these waves, the rotation of plane of polarization is absent when a linearly polarized wave travels through the waveguides. We conclude that these waveguides can be used as polarization insensitive phase shifters and the results of the reference[3, 7](the propagation constants for right hand and left hand circularly polarized waves in these waveguides are different and when a linearly polarized wave travels through the waveguides the plane of polarization is rotated) are questionable.  
        
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      更新时间:2025-12-08
    • Theory of Sectoral,Elliptical and Semi-Elliptical Waveguides

      林为干, 刘仁厚, 邬琳若
      Issue 3, Pages: 55-72(1980)
      摘要:Such non-circular waveguides as sectoral, elliptical and semi-ellptical waveguides have been widely used in satellite communication applications in the microwave and in millimeter wave ranges. However they are not fully studied yet. Here we give the data on the attenuation constant of the TE01 wave of the semi-circular waveguides and show that, the TE11 wave of the semi-circular waveguide is the more efficient transmission mode than the TE01 of the same guide. Given also are the characteristic im-pedances of the TE01 wave of the semi-circular waveguide and of the TE20 wave of the rectangular waveguides. These two kinds of waveguides together may build up a multiple branch waveguide coupler. Such coupler might as well be constructed by employing TE11 wave in the semi-circular waveguide and TE10 wave in the rectangular waveguide.We have calculated the attenuation constants of the TEC1l in an elliptical waveguide by a corrected formula other than that of Chu corrected by Lewin. Given also are data on the normalized guide wavelengths of the elliptical waveguide, needed in designing a phase shifter for generating circularly polarized  
        
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      更新时间:2025-12-08
    • 2400 Bits per Second Digital Vocoder

      Li Chang-li Mo Fu-yuan
      Issue 3, Pages: 73-84(1980)
      摘要:A real time digital vocoder which has 2400 b/s data transmission rate, has been developed The speech quality of the vocoder is excellent,and it can be used in low bit rate speech communications. Based upon the acoustics of speech and information theory of chinese characters, we have designed a 2400 b/s digital channel vocoder by means of the simulation in a general-purpose computer and implemented this vocoder hardware by TTL small and medium scale integrated circuits. The listening tests have proved that synthetic speech intelligibility and naturalness are both satisfactory. Moreover, hardware is. simple. Thus it can be adapted for communication engineering.  
        
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      更新时间:2025-12-08
    • Base Doped Profile for Manufacture of Super Gain Device

      Xu Jian-shi
      Issue 3, Pages: 85-88(1980)
      摘要:The preferable performance of the super gain device can be acquired through adequately controlling base doped profile. By this method, these super gain devices were mass-produced. Under test condition for Ic = 10MμA, VCB = 6V,. for NPN type device hFE may be greater than 2000, BVCEO than 30V. For PNP type device, hFE May be greater than 800, BVcEO than 20V, ICEO smaller than l0pA.This technology combined with silicon nitride-high nitrogen hydrogen baking will make high reliability and high precision linear integrated circuits available.  
        
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      更新时间:2025-12-08
    • Asymptotic Performance of a Rank Binary Integration Nonparametric Detector

      Zhu Zhao-da
      Issue 3, Pages: 89-98(1980)
      摘要:In this paper the formulas of asymptotic relative efficiency and asymptotic loss are derived for a rank binary integration detector after checking Capon’s regularity conditions. The results of calculation show that there exists an optimal rank quantization threshold which minimizes the asymptotic-loss. It is demonstrated that the optimal threshold is approximately equal to .8(N +1l), where N is the number of reference cells. As N increases, the minimal asymptotic loss decreases and approaches to 0.94dB. Although the rank binary integration detector has a slighly higher asymptotic loss than that of a rank sum detector, it can be implemented more economically.  
        
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      更新时间:2025-12-08
    • CHASRE/30 Software of Recognition of Chinese Characters

      Zhu De-quan
      Issue 3, Pages: 99-101(1980)
      摘要:The CHASRE/30 software has been developed for recognizing the printed, typewritten and handwritten Chinese characters automatically. The automatic recognition of the letters and numerals is also available with this recognizing logic. This article introduces the recognizing principle of this system in general terms, and presents the results of the computer simulation that has been done for the purpose of verifying this software logic.  
        
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      更新时间:2025-12-08
    • A New Method of Measuring Gunn Device Thermal Resistance

      郑一阳, 金秀雯, 张进昌
      Issue 3, Pages: 102-104(1980)
      摘要:In order to measure the thermal resistance of Gunn devices under the working state, we have studied the dependence of domain avalanche threshold value on the temperature in Gunn devices, and observed that domain avlanche threshold value increases with the temperature. The measurment of the thermal resistance in general Gunn devices with this method is shown. We have found that the thermal resistance at the working point is much higher than in the low field. This result can be used to advantage in device design and reliability study.  
        
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      更新时间:2025-12-08
    • Gu Xue-min
      Issue 3, Pages: 105-110(1980)
      摘要:The paper gives a theoretical analysis of a multi-stage logarithmic amplifier in which each stage is driven sequentially and in which the parameters of each stage are. not consistent, the slope of a single stage is discontinuous and the base of the logarithm of a single stage is arbitrary. It also discusses how to apply the theory to the design of highly accurate logarithmic amplifiers In addition, the last part of the paper presents an example for designing a logarithmic amplifier with 80dB dynamic range and an error of 1%.  
        
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      更新时间:2025-12-08
    • Preparation of 500 Grams InP Single Crystal

      Issue 3, Pages: 111-112(1980)
      摘要:<正> 河北半导体研究所使用本所设计的高压单晶炉,采用炉内合成的液封直拉技术,于1980年初成功地制备出锭重500g质量良好的InP单晶(如图1所示)。  
        
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      更新时间:2025-12-08
    • 4GHz Uncooled Parametric Amplifier with Noise Temperature of 50K

      Issue 3, Pages: 112(1980)
      摘要:<正> 南京固体器件研究所研制的供卫星通信地面站用的W205型4GHz非冷参放系统(如图所示),已于1979年底通过定型考核。该系统采用了截止频率fc≥600GHz的变容二极管、5mm的耿氏泵源和高性能的四端环行器。在设计腔体时已照顾到防止空闲和频泄露问题。小心地把信号频率和这两个频率分隔开是获得低噪声的关键之一。整机采用热电致冷恒温,所有部件工作在20℃。  
        
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      更新时间:2025-12-08
    • Issue 3, Pages: 114(1980)
      摘要:<正> 中国电子学会于今年7月12~19日在北戴河召开了第一次工作会议。如何使电子科学技术转化为生产力、从而为四化建设多作贡献,是贯串于这次会议的中心议题。 出席会议的28个省、市、自治区电子学会和26个专业学会主持日常会务的负责工作人员,在听取了关于中国科协二大精神的传达后,各据1978年恢复学会活动以来的成就,交流了许多值得互相借鉴的好经验:科技力量相对地强的地方学会关于提高与普及并举的经验;基础比较薄弱的地方学会关于普及与  
        
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