最新刊期

    2 1983
    • Analysis and Optimized Circuit Design of Six-Port Re-flectometers

      R.G.BosisioLi Shi-He
      Issue 2, Pages: 1-8(1983)
      摘要:A computer simulation analysis of the uncertainties in complex reflection coefficient measurements of a six-port reflectometer is given in this paper. Because the only error source for a calibrated six-port reflectometer is the microwave power measurement error, the present analysis tries to find the relationship between network parameters of six-ports and the related measurement error based on a given power measurement error level.The optimum six-port network parameters are then found and the maximum tolerances of network parameters to keep acceptable measurement accuracy are obtained.Furthermore, amulti-octave microwave circuit with the optimum network parameters is reported. This circuit is composed of ordinary quadrature directional couplers and 3 dB in-phase power dividers, designed by a computer aided design procedure, and realized by ordinary microwave integrated circuit technology in the laboratory.  
        
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    • 真空电子学专业学会第四届年会在沪召开

      Issue 2, Pages: 8(1983)
      摘要:<正> 中国电子学会真空电子学学会第四届学术年会于1982年12月9日至15日在上海举行。与会代表共240多人。大会由真空电子学学会委员胡敏斋主持,真空电子学学会副主任委员刘盛纲致开幕词。 年会征集并编辑出版的《第四届学术年会论文摘要汇编》汇集了167篇论文的详摘。在会上宣读的论文共130多篇,其中大会报告十篇,其余论文分三组交流并讨论,计总论及超高频组36篇,电子束组30篇,材料工艺组55篇。论文内容从电真空器件的原理到应用,从采样到检测,从国内外现状到本学科的发展以及新型真空器件的开发等,涉及到真空电子学的各个主要领域,回答和提出了不少为该行业共同关心的问题。  
        
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    • An Investigation on Nullor Equivalents -for RC Active Networks

      Li Yuan-wen
      Issue 2, Pages: 9-15(1983)
      摘要:This paper describes a method of designing active networks by using nullor equivalents as models for op-amps and bipolar transistor circuits.As many as 24 types of dual op-amp GIC circuits are derived on the basis of the 8 types developed by Bruton. Of the 16 types of simulated inductance circuits consisting of two transistors and a minimum number of RC elements,only 8 types are found to be capable, of low loss realization of simulated inductance. And the actual performances obtained from such realization are in good agreement with theo-retical calculations.  
        
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    • New Donor in Annealed Silicon (Ⅱ)

      Xu Zhen-jia
      Issue 2, Pages: 16-20(1983)
      摘要:This is the second part of our discussion on the new donor generated in p-type CZ-Si commonly used for LSI manufacture after annealing at 700℃. In n-type CZ-Si, the new donor can also be observed and its properties are the same as in p-type Si,but its gene-ration rate and concentration are both lower than that in p-type Si. The new donor is proved to be closely correlated with the thermal donor.The preannealing in the temperature range from 300℃-800℃ can promote the new donor generation with 450℃ being the most effective temperature.However,the preannealing at the temperature above 800℃ would decrease the new donor generation. The new donor is more stable than the thermal donor. Only 68% of the new donor is eliminated after annealing at 1050℃ for 30 hours in the sample containing the new donor of 1.33 × 1016cm-3. The nature and generation of the new donor are also discussed in detail.  
        
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    • Liu Hsiang-na, He Yu-liang, Shen Zong-yong, Wu Ru-ling
      Issue 2, Pages: 21-25(1983)
      摘要:This paper studies the variation of the characteristics of current transport processes with the grain size in amorphous and polycrystalline silicon films prepared by both CVD and GD methods. The tailing width of the films deposited in a range around the crystallization temperature decreases obviously with the increasing grain size and it tendsto disappear if the grain size increases to about 700-800A. The transport processes of the films (with crystalloid less than 200A)deposited below the crystallization temperature exhibit mainly the amorphous characteristics, and the Mott-Davis localized conducting model is also usable. The low temperature transport process in the films deposited above the crystallization temperature are attributable to the deep trapped levels arising from the polycrystalline grain boundaries  
        
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    • Polycrystalline Properties of Multialkali Antimonide Photocathodes

      Fan Yao-liang, Wu Quan-de
      Issue 2, Pages: 26-32(1983)
      摘要:An improved polycrystalline photoemissive model of multialkali antimonide ph-otocathode is presented and a formula of its photoemissive yield and its computer program are derived. It is concluded that there are two factors in the model: effective grain boundary loss rate and grain boundary barrier height. According to the model, experimental phenomena can be well explained and possible approaches to increase photosensitivity of the photocathodes are discussed.  
        
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    • On the Emission Mechanism of Oxide Cathode

      Zhang En-qiu
      Issue 2, Pages: 33-39(1983)
      摘要:In monocrystals of BaO, SrO and, CaO, data from electrical and optical conductivities, photdemission and absorption spectra are so diverse that an accurate energy diagram can not be depicted. This implies that the surface phenomena are more important than the bulk ones. The internal and external work functions obtained from BaO monocrystal film on Ir(lOO), being single valued, are not consistent with the wide distribution of work functions of tricarbonate cathodes measured by scanning low energy electron probe, indicating that the semiconductor model is not a correct description of commercial oxide cathode. AES measurements show that, the coatings are rich in oxygen, which negates that the oxygen vacancy acts as electron donor. But the fact that the excess bariums are responsible for electron emission may be reconciled with the deficiency of alkaline earth metals during life by the dynamical surface emission center model. This model suggests that an aggregate of atoms with excess barium absorbed on alkaline earth oxides can emit electrons efficiently, which can explain many phenomena observed by modern surface analysis techniques.  
        
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    • “数字技术在广播、电视中应用”学术交流会在天津举行

      Issue 2, Pages: 39(1983)
      摘要:<正> 中国电子学会广播电视专业学会于1983年1月6~10日在天津市召开了关于数字技术在广播电视中应用的学术讨论会。参加会议的约80名代表。会上交流了39篇论文。会议由广播电视专业学会主任委员隋经义高级工程师主持。副主任委员俞斯乐副教授向与会人员介绍了他对第9届国际广播会议的观感和这方面的进展情况;委员官知节高级工程师根据他对国外开发电视唱片的考察作  
        
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    • A Bayesian Approach to Determining MTBF Growth for Electronic Products

      Zhou Yuan-quan
      Issue 2, Pages: 40-44(1983)
      摘要:The Problem of estimating the failure rate (or MTBF) of an electronic product under development testing is considered from a Bayesian approach, m sets of life trials are performed under conditions which lead to an ordering of failure rates λ1>λ2>…> λm. The parameter of interest is Am. the final underlying failure rate of the product. The marginal posterior probability density function for Am is obtained when the conjugated type prior distribution without prior knowledge is assumed. An approximate solution is derived to meet the practical engineering needs, and the method is illustrated.  
        
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    • Zhou Ping, Wu Bo-yu, Zhang Ke-qian
      Issue 2, Pages: 45-51(1983)
      摘要:A physical model and related formulas describing the drift process of a density modulated electron beam through the sever and the build up of RF field on the slow wave system beyond the sever are presented in this paper. Computed results show that the difference of output power between theoretical and experimental values is around 7-20%, which varies from tube to tube. Systematic study reveals the effects of the length, location and the drift process in the severs on the output power.The technique and program used in this work can be applied, for CAD of IBCFA.  
        
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    • Lu Ding-qing
      Issue 2, Pages: 52-57(1983)
      摘要:This paper investigates the statistical distribution law for the DFT spectrum of the clutter processed by a quadrature two-channel system with the canceller. In the case of Rayleigh clutter, the spectrum probability distribution is derived by means of the characteristic function method. In the deriving process, it is discovered that spectrum lines are different not only in variance but also in the form of distribution under the given parameters N, p and q. These results are proved by Monte Carlo Simulation. The analysis of the data from simulation reveals the statistical law of amplitude for the spectrum in which the real part or imaginary part does not converge to normal distribution.  
        
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    • Lock-Semantic Resolution Using Reduction

      Liu Xu-hua
      Issue 2, Pages: 58-61(1983)
      摘要:Instead of factoring in the usual resolution principle, this paper uses reduction in the lock-semantic resolution proposed by the author before.It is proved that the lock-semantic resolution using reduction (RLI-resolution) is complete. An algorithm for performing RLI-resolution is also given.  
        
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    • 全国可靠性数学第一届年会在无锡市召开

      Issue 2, Pages: 61(1983)
      摘要:<正> 全国可靠性数学第一届学术年会于1982年11月1日至7日在无锡市举行。这次会议是由运筹学会可靠性数学专业委员会发起召开的。参加会议的有来自全国各地的代表93名。在会上共宣读论文60篇。会议期间,代表们就可靠性数学会后的发展方向,如何更好地为国民经济服务等问题进行了讨论。这次会议是历次可靠性数学学术会议中人数最多的。青年代表所占的比例大大增加。从会议上交流的论文反映出:可靠性数学在我国应用的领域不断扩大,已经涉及到国民经济的绝大多数部门,可靠性数学中一些比较深  
        
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    • Electronically-Tuned Small Conical Helix Antenna

      Liu Mao-heng, Yang Chang-han
      Issue 2, Pages: 62-65(1983)
      摘要:A small conical helix antenna with electronic tuning by varactors is presented. Its resonance frequency, polarization and radiation pattern are discussed. Experimental results are also given.  
        
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    • Feng Gui-liang
      Issue 2, Pages: 66-72(1983)
      摘要:The problem of finding the minimum distance and the number of parity check digits for a given Goppa code has not been solved as yet. It is well known that the Goppa code over GF(q) with G(z) and L GF (qm) has its minimum distance d≥deg G(z) + 1 and its number of parity check digits n-k≤m deg G(z), and in the binary case, let G(z) be the lowest degree perfect square which is divisible by G(z), then d≥-deg G(z) +1. In this paper, these results are generalized, and it is pointed out that the minimum distance and the number of parity check digits for a given Goppa code are related not only with G(z) but also with L.  
        
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    • Issue 2, Pages: 72-15(1983)
      摘要:<正> 【本刊记者报道】如何使电子科学技术,特别是计算机和集成电路技术在2000年前,为我国国民经济年产值翻两番作贡献,是我国电子学界自十二大以来至为关心并广为议论的问題。1983年1月19日,李强、李兆吉、郭平欣、王守觉、李传信、吴畿康、邓国军、林兰英、江泽民、陈克恭、欧阳轵能、力一、顾德欢、陈力为、黎东汉、钱文极等在京电子学家、学会理事、电子工业领导干部,在中国电子学会主持的一次新春学术座谈会上,又一次围绕这个主题,献计献策,发表了很好意见。其中最为集中且引人深思的,约有如下几点。  
        
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    • High Performance Air-Gap Coupled SAW Convolvers

      Feng Suo-chun, Zong Jian, Li Li-yan
      Issue 2, Pages: 73-77(1983)
      摘要:This paper presents the development and experimental results of the real-time air-gap coupled SAW convolvers, and discusses some of the problems associated with such a convolver.The main performance of our device features an external convolution efficiency of -48dBm,a dynamic range larger than 70dB and a convolution output power larger than-15dBm (load 50*).Some signal processing experiments (including chirp signal, 7 bit Barker code, uniform and non-uniform pulse sequencies, and rectangular pulse) using our convolver have been carried out, and the experimental results are in good agreement with the theories.  
        
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    • Admittance Matrix Analysis of Linear Active Networks

      Yi Ming-guang
      Issue 2, Pages: 78-84(1983)
      摘要:Explicit formulas for the constraint admittance matrix and the nodal short-circuit current source vector of networks containing ideal voltage sources are derived by nodal approach. Also, having made use of reverse transmission to describe an operational amplifier, a unified rule of the constraint admittance matrix of networks containing operational amplifiers is obtained.  
        
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    • Cathode Research Lab., Institute of Electronics, Academia Sinica
      Issue 2, Pages: 84(1983)
      摘要:<正> 中国科学院电子学研究所已经研制出了一种浸渍钪酸盐钡钨阴极。中国科学院已于1982年7月通过了对该项成果的鉴定。该阴极的突出优点是工作温度范围宽,在较低工作温度下,具有小的蒸发;制造工艺简单,容易掌握。其性能已达国际先进水平,并已在国产回旋管、磁控管、速调管及行波管等十几种器件中获得应用,效果良好。 该阴极的主要性能为:(1)热发射脉冲宽定为100μs;重复频率100Hz下的拐点发射电流密度j拐在阴极温度达800℃时为10A/Cm2,850℃,900℃时为30A/cm2(15只钼阳极管的平均值);直流3/2次方曲线  
        
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    • A Study of Low Drift in High Precision IC Operational Amplifier

      Chen Jin-song
      Issue 2, Pages: 85-89(1983)
      摘要:The calculations of the offset voltage drift of integrated circuit operational amplifier using super-* transistor as the input stage are made. In addition to the offset voltage drift of the first stage, the drift contributions of the second stage should also be taken into consideration when designing the high precision low drift IC operational amplifer. Based on this recognition, KD207 is developed.The circuit achieves open loop voltage gains of over 130 dB, common mode rejection ratio of about 120 dB, and offset voltage drift of less than 0.5uuuV/CCC (optimum).  
        
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    • Five-Electrode X-Y Matrix Fluorescent Display Panel and TV Image Display

      Ge Shi-chao, Liu Hua-bin
      Issue 2, Pages: 89-94(1983)
      摘要:The structure and luminance characteristics of the five-electrode fluorescent display panel and its driving method when it is used as a real-time TV image display are discussed. The relationships between the luminance and the display panel structure parameters and its operating conditions are presented. The vertical scanning is finished by grids decode, and there is only one anode driver in it. In the experimental TV set, a luminance of 82 nit and a contrast ratio of 40:1 and a gray level of 6 were obtained with a total power consumption of 13.5W.  
        
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    • Zhou Quang-di
      Issue 2, Pages: 95-98(1983)
      摘要:Based on Smithers’ graphical method for derivatives, a second-order differential circuit has been introduced for the electric probe to record at the same time the curve of current versus voltage, and its first and second derivative curves. this method can be used to measure the electron energy distrubution in low pressure gas lasers and other weakly ionized plasmas. With simple contruction and reliable performance, it is suitable for general experimental conditions.  
        
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    • A Study of Liquid Crystal Light Valve for Large Screen Projecting TV

      Zhao Jing-an, Tung Shou-sheng, Ruan Liang
      Issue 2, Pages: 99-100(1983)
      摘要:By coupling the field-induced cholesteristic-nematic transition liquid crystals with electron beam light valve, quick pictures meeting TV requirements are obtained. The picture resolution is over 300 lines, and the ratio of contrast is about 15:1.  
        
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    • Yao Shi-lin
      Issue 2, Pages: 101-102(1983)
      摘要:This paper has proved that there is very good property of crosscorrelation between the L-sequence and its antisequence, and that they are especially suited to be used as "the carrier of data communication"with a profound practical value.  
        
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    • Solution of Discrete State Equations in the Sequence Domain

      Peng Wen-qiang
      Issue 2, Pages: 103-105(1983)
      摘要:This paper attempts to apply Walsh transforms to the state-space analysis of linear discrete-time systems. A cyclic shift-theorem of Wal’sh transforms presented by Cheng and Liu is first extended, and with the aid of Walsh transforms of the discrete state equations, a simple numerical formula for solving the state equations in the sequence domain is derived, from which a group of cyclic solutions of zero-state,response of a system can be obtained. An illustrative example is given.  
        
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    • 《数字信号处理程序》及程序库磁盘将于年内发行

      Issue 2, Pages: 105(1983)
      摘要:<正> 中国电子学会信号处理专业学会和中国仪器仪表学会信号处理专业学会,针对国内有关科研、教学、生产单位对数字信号处理的迫切需要,在电子工业部技术司的有力支持下,在北方交通大学、清华大学、中国科学院声学研究所、北京市自动技术研究所、南京工学院等有关部门的共同努力下,经过一年多的努力,编译了涉及快速付里叶变换、功率谱估计、快速卷积、语音信号的线性预测分析、有限和无限冲激响应数字滤波器设计与综合、倒谱分析、内插和抽取等20多个程序的技术资料。书名取为《数字信号处理程  
        
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    • Wu Jian-gen, Shen Jin-xuan, Qu Feng-yuan, Yong Heng-qing, Zhao You-yuan, Gao Ru-fang
      Issue 2, Pages: 106-109(1983)
      摘要:The implanted silicon wafer is annealed by the scanning CW CO2 laser. The square resistance. Hall coefficient, elliptic’ally polarized parameters and diffusion length of minority carriers are measured after laser annealing. There is a critical scanning speed for given laser power, diameter of beam and preheated temperature of wafer. Blow the scanning speed, the electrical and optical parameter are as same as that after furnace annealing, but the diffusion length of substrate is several times as long as that after furnace annealing.  
        
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    • Zheng Cheng-en, Huo Yun-sheng, Bao Zhi-xiang, Wei Yun-rong
      Issue 2, Pages: 110-112(1983)
      摘要:Laser output energy and discharge performances of an electron-avalanche discharge XeCl* 3080A laser at high gas pressures are investigated in this paper.  
        
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