摘要:Theory and algorithm of the homotopy BP neural network are proposed in the paper,the error minimization problem in a BP neural network is transfered to the solving system of an associated nonlinear equation,and the globally minimum error and the faster convergence speeds can be obtained by the homotopy BP algorithm.It is checked by results obtained with theoretical analysis and computer simulation.
摘要:Performance evaluation is very important for improving the performance of parallel systems.In this paper,firstly,the primary factors that affect the parallel execution efficiency of programs are briefly discussed.Then an analysis method of average parallel degree μave is presented.Furthermore,the performance of PAM/TGR machine on a transputer array is tested and evaluated,and over/lower acceleration phenomena are also exploited and discussed.The results show that good acceleration effects and high utiliza-ton ratio of processors have been obtained,the lower speedup can also be avoided with PAM/TGR machine effectively.The PAM/TGR machine has higher performance compared with related parallel systems abroad.
摘要:Fuzzy general AND/OR graphs of a new type are defined on triangle norm and its extension.The backward heuristic search algorithm BFAO" for fuzzy general AND/OR graphs is presented,in terms of newly-defined heuristic function h(n,x) and the principle that all subtrees of the optimum solution tree for fuzzy general AND/OR graph are also optimum subtrees.The admissibliry of algorithm BFAO is proved.In this paper,two new monotone restrictions for heuristic function h(n,x) are also defined.Based on these,the characteristic of monotone restrictions for algorithm BFAO is investigated,and the comparison between two BFAO algorithm is discussed.
关键词:Fuzzy general AND/OR graph;heuristic search;Heuristic function;Monotone restriction;algorithm
摘要:A pseudo-two-dimensional model,which can simulate the characteristics of thin film fully depleted SOI short channel MOSFET’s in saturation region is developed based on a detailed analysis of special physical effects in thin film fully depleted SOI devices.The model not only physically takes account of second order effects such as carrier mobility degradation,velocity saturation and short channel effects and describes the unique film thickness and back gate effects in the SOI devices,but also guarantees the continuity of the current,output conductance and its derivative with respect to the drain voltage at the transition point from the linear to the saturation region.The computed results of the proposed model show good agreement with those obtained with two dimensional device numerical simulation.
关键词:SOI technology;Thin film SOI device;Short channel device modeling;VLSI circuit CAD
摘要:This paper gives high temperature equivalent circuit of CMOS inverters.The high temperature DC transfer characteristics and transient performance of CMOS inverters have been analysed.It has discussed the analysis methods of high temperature electrical characteristics of static CMOS digital integrated circuits.The experimental results are in basic agreement with models which the paper has given.
关键词:high temperature;CMOS inverter;CMOS digital integrated circuits;DC transfer characteristics;Transient characteristics
摘要:Based on the theoretical analysis and experimental studies,a 1300V and a 1600V IGBT were realized by making use of n-/n+/p+ epitaxial layers and bulk silicon material,respectively.Furthermore,the related key techniques of obtaining a high voltage IGBT have been identified,which are accurate design and optimization of the device longitudinal and lattitudinal structure and electrical parameters,technological preparation of high quality thick Si layers with low defect levels,and formation of the composite junction-termination by both superposition and combination.
摘要:The test scheduling problem is proved to be polynomially solvable.According to this result,and optimal test scheduling scheme is offered.Finally,a control scheme during test scheduling is presented,which minimizes the number of extra controllable inputs.
关键词:Parallel processing in test generation;Test scheduling;Test length;Polynomial algorithm;Optimal algorithm
摘要:A novel unified 2-D program with the boundary element method(BEM) for MZ-JTE is developed.The distributions of electric field and potential and the effect of-surface charge on high-voltage MZ-JTE are simulated.The BEM results are in agreement with ones obtained by the finite difference method (FDM) and the finite element method (FEM).The presentation of BEM and the successful development of the program have opened a new way for analyses and designs of junction terminations.
Chen Guangju, Li Weimin, Gu Yapin, Kuang Shi, Wang Houjun, Yang Hongmo, Tan Jun, Tian Shulin, Xu Jiannan
Issue 11, Pages: 57-60(1993)
摘要:The Computer Aided Test (CAT) workstation is a new type of CAT system.Our research group has made some important improvement on it.The configurating fashion and working mode of the CAT workstation,as well as the state of progress are also discussed.This achivement passed the technical detemina-tion in Peking in Jan.1992.Some of it have produced quite good economic benefit.
摘要:In this paper,we propose and investigate a new method,the Interval Management Method (IMM) ,to manage disk storage space,The new method,in which disk storage space is treated as a set of continuous blocks’ intervals,allocates continuous disk free blocks in physical location to each write-request,which supports high-speed access to disks.We have designed the allocating and recollecting algorithms for IMM.We also verify IMM through simulation.The simulative results show that IMM is an efficient management method for disk storage space.
摘要:In this paper,(p+q)-port gyrator that is a kind of multiport resistor element is presented.The set GIT(p+q)of all (p+q)-port gyrators and transformers is studied by the method of group theory.The results show that the GIT(2n) forms a group when p=q=n.Finally,the decomposition,circuit synthesis and application of (p+q)-port gyrator are discussed.
关键词:(p+q)-port;Gyrator;transformer;Decomposition;Method of circuit synthesis
摘要:The interfacial traps of P-InP MIS structure samples grown by PECVD have been studied using C-V and DLTS techniques.The insulating layers were grown under special conditions.Experimental results show that the interfacial traps are located in the interface between the insulator and InP,and near the interface in the InP.We obtain the deep level parameters associated with the interfacial traps.The origin of these traps might be due to irradiation damage induced by plasma during insulating layer growth process.
摘要:The direction-distinguishing circuits of the shifting of Mach-Zehnder interference stripes and signal processing with a single-chip computer are reported.
Wang Yafei, Yuan Jinghong, Chen Ruizheng, Mo Huade
Issue 11, Pages: 80-82(1993)
摘要:The harmonic technigue is used to increase the operating frequency of the transducer of the SLAM.The increase of the operating frequency from 100 MHz to 300 MHz is realized through experiments.Some samples are successfully imaged on TV Screen.
摘要:The insufficiency of Boolean algebra in guiding the design of digital circuits is pointed out,and the switch-signal theory which can reflect the interaction between switching element and signal in digital circuits is established by distincting two kinds of variables describing switching state and signal.This theory is concretely applied to the research of nMOS circuits.The result confirms that the theory can efficiently guide the de-sign of nMOS digital circuits at element level.
摘要:Main part of low-frequency noise in bipolar transistor is the 1/f noise,and its important parameters fL and y are difficult to obtain.In this paper,the method of measurement and extraction for 1/f noise parameters fL and y of bipolar transistors is presented.It’s based on the low-frequency noise voltage spectra measurement and applying weighed least square method.The examples of bipolar transistor 3DX7 are also given.
摘要:This study reveals that the mechanism of leakage current in the oxynitride is deviating from that in conventional grown silicon oxide in the electric field ranging trom 6MV/cm to 14MV/cm and suggests that the electronic conduction is governed by three different mechanisms.The current conduction at electric field lower than 8MV/cm is due to the tunneling of electrons into the shallow traps in the insulator.In high-field region (>10MV/cm),Fowler-Nordheim(FN)effect becomes dominant but depends on the dielectrics preparation conditions.In moderate field region,traps can be filled by both FN current and direct tunneling of electron into the traps.It results in a quasi-saturation in the leakage current.On the other hand,as the nitrida-tion proceeds,turnaround behaviors are found in leakage current level,ledge in current-voltage characteristics,and fied-dependency of the current.
摘要:This paper deals with the versatile method for designing ternary Flip-Flops on the basis of state diagram,which is applicable to symmetrical and unsymmetrical ternary logics.One state diagram can be used for deriving Master-Slave Flip-Flop,Hazaed-Free Flip-Flop and other effective one.In this paper a double-pole cp Flip-Flop has been designed.Finally,RSR and JK Flip-Flops are improved.
摘要:The improved type of multi-star LAN is reported in this paper,which greatly improves the performance of the multistar LAN presented by Saito’s Research Institute at Tokyo University.