最新刊期
      卷 ， 期 2 ， 1994

      • The Monte Carlo Particle Simulation for Submicron Si MESFET

        赵鸿麟, 战长青, 潘姬
        Issue 2, (1994)
        摘要：Following the work of the simulation for GaAs submicron device with Monte Carlo particle method,this paper uses the same way to simulate silicon submicron MESFET.In addition to deal with different scattering mechanisms in silicon,advanced concepts and methods,such as FFT（Fast Fouier Transfomation） and fast self-scattering,have been used.It to some extent overcomes the disadvantage of Monte Carlo method.Much computer time has been saved.The results of the simulation demonstrate the performance of silicon MESFET.  
        关键词：Devices modelling;Monte Carlo method;Si submicron devices   
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      • Hao Yue
        Issue 2, (1994)
        摘要：Based on the sequential quadratic approximation medel of circuit characteristics functions,a new statistical optimization technology is given in which the random fluctuation of circuit performance is considered.Because of the specialities during IC design and manufacture,the method solves parameter optimal problem,of which design space and fluctuation space are different.In this paper,the theoretic framework of this model is obtained.The feasibility and utility of the method are demonstrated satisfactorily by an example of CMOS design at last.  
        关键词：integrated circuit;Statistical optimization;Parameter design   
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      • A Novel structure for a-SiN∶H/a-Si∶H Multilayer Avalanche Photodiodes

        Jiao Lihong
        Issue 2, (1994)
        摘要：In this paper,we propose a novel structure for a-SiN:H/a-Si:H multilayer photodiode──reach-through-valley APD,analyze two important parameters multiplication factor M and excess noise factor Fe which mark APD’S characteristics ,give the quantized formulas for M and Fe theoretically,and discuss in detail the micromechanism of the carrier transport in this structure.The reach-through-valley APD was fabricated successfully in our Lab. By measuring and analyzing,we propose a new model──tunnelling to calculate M and Fe experimentally which are 5.8 and 1.48 respectively.when VR=-13V.  
        关键词：Reach-through-valley;APD;Multiplication factor;Excess noise factor   
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      • Niu Wencheng
        Issue 2, (1994)
        摘要：This paper studies PVC membrane’s K￣+ -ISFET sensor taking diphenyl-l30-corwn 10 as sensitive materials.Ingredient proportion Changing in the membrane between sensitive material and plasticizer has an effect on response character of K￣+ -ISFET.Response mechanism of K+ sensitive membrane has been discussed.The experimental results correspond to the theoretical analysis.  
        关键词：Sensitive materials;Plasticizer;Ingredient proportion;K￣+-ISFET   
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      • Parameter Extraction of Large Signal Circuit Model of Semiconductor Laser

        任新根, 徐国萍, 董天临
        Issue 2, (1994)
        摘要：A new method which extracts parameters of large signal circuit model for laser Diode（LD） from its external performances,such as terminal electrical Characteristics and small signal frequency response,is presented and used in an InGaAsP ridge waveguild LD and a buried heterostructure laser in this paper.No knowledge of internal data of LD is needed and the results are shown to be consistent with reported theoretical and experimental data.  
        关键词：Large signal circuit model;Small signal circuit model;Semiconductor laser;parameter extraction   
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      • 电子工业部第13研究所70项科研成果通过鉴定

        Issue 2, (1994)
        摘要：电子工业部第１３研究所７０项科研成果通过鉴定电子工业部第１３研究所第２９次科研成果鉴定会于１９９３年１２月２３—２５日在石家在１３所召开。本次会议鉴定项目为历年来最多的一次，提交专家评议的鉴定项目共计７０项，这次科研成果鉴定会在技术上有以下特点：１．...  
          
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      • Liang Ruilin
        Issue 2, (1994)
        摘要：The influence of physicochemical characteristics of raw materials on properties and microstructures in porous PTC ceramics has been studied.By analysing the properties and microstructures in porous PTC ceramic prepared from the two different compounds containing crystal water,it is shown that two different compounds have two different effects on properties in one block of porous PTC ceramics.  
        关键词：有机酸盐;物理化学特性;结晶水;多孔性陶瓷   
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      • Zhou Liuding
        Issue 2, (1994)
        摘要：First,We demonstrate a new algorithm for polynomial product modulo（Z￣N +1）implemented by the W transforms.Next,we combine this new algorithm with polynomial transforms to calculate N×N（N=2￣t）complex-valued convolutions.This combining approach only needs 2N￣2·（log2N +3/2） real multiplication counts and 10N￣2·log2N+10 real addition counts to calculate above convolutions.  
        关键词：卷积;多项式变换;W变换;算法   
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      • 全国第五届CAD／CAM学术会议召开

        程景云
        Issue 2, (1994)
        摘要：全国第五届ＣＡＤ／ＣＡＭ学术会议召开中国电子学会全国第五届ＣＡＤ／ＣＡＭ学术会议于１９９３年１２月７日至１１日在“重钢天山”号轮船上举行。会议由上海海运学院主办，交通部公路科学研究所、浙江大学ＣＡＤ＆ＣＧ国家重点实验室、华东计算技术研究所、《计算机辅...  
          
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      • A Fast High Resolution Technique Based on the Subspace lteration

        李有明, 保铮
        Issue 2, (1994)
        摘要：In this paper.we present a subspace iteration method which can fast obtain the signal or noisesubepace without eigendecomposition.Theoretical analyses and computer simulations verify that the performance of this method is similar to that of music meth<xl,but the reduction in computational complexity is substantial.  
        关键词：array;spectral estimation;Multiple source location;Matrix method   
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      • Two Approaches of Modifying Neural-Based A/D Converter Circuits

        樊社民, 邱关源
        Issue 2, (1994)
        摘要：A/D converter circuits based on Hopfield neural network are studied in this paper.The besic operation mode of A/D conversion and the stable state solution of the circuit are compared.Then the relation between the output state and the reference input of the neurons is discussed.The reference input conditions for correct output states are derived.Two approaches of modifying A/D converter circuits are presented:1.Appropriate selection of reference inputs in the original circuit,2.A new circuit based on the concept of the Hopfield linear programming circuit.PSPICE computer simulation results are also given,and in accord with the theoretical analyses.  
        关键词：Hopfield neural network;Linear programming network;A/D converter   
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      • 太阳电池测试中心站

        孔凡建, 于培诺
        Issue 2, (1994)
        摘要：太阳电池测试中心站电子部天津第１８研究所的太阳电池测试中心站，是国家商检局认定的中国物理电源进出口产品认可实验室；是电子工业物理电源产品质量监督检测中心；国际标准化组织等全国性专业技术组织的挂靠单位。该中心站从七十年代初期开始研究并探索太阳电池的计量...  
          
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      • The Maximum Rate of Circu1ar Pipelined Digital Systems

        陈书明, 陈福接
        Issue 2, (1994)
        摘要：The determination of the maximum rate for a pipelined system is a well known conclusion from the references[1～3].But in the opinion of this paper.such a conclusion is only suitable for linear pipelines,and a more pessimistic one is encountered when circular pipelining is considered. Using both edge flip-flope and latchea as synchronizing elements,we prove that the determination of the rate upper limit is equiualent to a LP problem.A number of example circuits are used to demonstrate the solution of their minimum clock cycles by running our program PIPE-LP.  
        关键词：环路流水线;时钟周期;行波;定时规则;设计优化   
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      • The Posterior Mean Method of Image Restoring and Edge Extracting

        王勇, 吴立德
        Issue 2, (1994)
        摘要：In this paper,it is proposed to use the posterior mean instead of MAP￣[4],i.e.,to use square loss instead of 0-1 loss.The advantages are multiple:（1）much faster convergent speed.roughly 1/√ n versus 1/logn;（2）high precision in location of edges.especially for important corners,crossings and Y-shaped edges etc.;（3）more noise-resisting as indicated in[7].Both theoretical and experimental results are presented.  
        关键词：图象恢复;边缘提取;后验均值方法;Markov随机场;中心极限定理;均方损失   
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      • Potential and Developing Trends of Silicon Ultrafast Bipolar Technology

        魏同立, 郑茳
        Issue 2, (1994)
        摘要：The research status and limitation of silicon ultrafast bipolar technology are reviewed in this paper.It is indicated that the SiGe heterostructure improves evidently the electrical performance of the pure silicon devices,which provides a new technical way for the development of silicon ultrahigh speed devices and circuits.  
        关键词：Si;SiGe;Bipolar transistor;Ultranigh speed   
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      • The Analysis and Simulation of CMOS Continuous-Time Curren-Mode Filter

        凌燮亭, 董国杰
        Issue 2, (1994)
        摘要：In this paper the current mirror integrator and two-and high-order current mode filters are analyzed and simulated by SPICE.The results show that with the 3μm standard process.these circuits can work well to 10MHz.  
        关键词：电流积分器;开关电流滤波器;电路模拟   
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      • Qiu Kun
        Issue 2, (1994)
        摘要：The theoretical analysis and experimental study on ultrashort optical pulse amplification in semiconductor laser amplifiers are presented.The experimental result is in good agreement with that of the numerical solution.  
        关键词：Semiconductor laser amplifier;Ultrashort optical pulse   
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      • Properties of Sensitivity of GaAs MESFET to Stress

        孙金坛, 陈军宁
        Issue 2, (1994)
        摘要：Properties of sensitivity of GaAs MESFET to stress were investigated.The sensitive principle was analysed.The possibility of fabricating force sensor using GaAs MESFET was discussed.  
        关键词：GaAs MESFET;Piezoelectric effcect;sensor   
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      • Approximate Method of Optical Waveguide with Exponential Models

        石邦任, 刘骥
        Issue 2, (1994)
        摘要：For the planar optical wavesuide with exponential index profile.the wave equation is solved by means of first order perturbational mathod and analytical solution of mode field and mode dispersion equations are obtained in terms of Airy function.The propagation constants are calculated by the first order approximation.Compared to exact values of Conwell,the resuts are rather satisfactory.  
        关键词：光波导;传播常数;模场   
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      • Development of 0.50μm LDD PMOS Technology

        YuShan
        Issue 2, (1994)
        摘要：In order to develpo high reliatrility submicron VLSI,it is necessary to suppress the serious PMOS hot carriers effect effectively.The investigation of 0.50μm LDD PMOS process indicates that LDD can suppress the hot carriers effect and short channel effect of PMOS greatly.The optimum LDD PMOS process,which has been applied to submicron ICs fabrication,has been devloped finally.  
        关键词：热载流子效应;器件工艺   
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      • 胡谋, 徐申生
        Issue 2, (1994)
        摘要：The application of multiple-valued logic to model capacitors in MOS circuits is discussed in this paper.Based on this model,new methods for MOS dynamic circuit analysis,delay analysis and charge sharing analysis are proposed.  
        关键词：多值逻辑;电容模型;MOS电路   
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      • An Investigation of Fully Balanced OTA-C Continuous-Time Filter

        王萍, 赵玉山
        Issue 2, (1994)
        摘要：In this paper the performances of Fully Balanced OTA-C Filter are discussed.the analyses show that such OTA-C filter structure provides higher power supply rejection ratio,higher signal-to-noise ratio and better high frequency performance compared with single ended OTA-C filter structure.The theoretical analyses have been verified by the SPICE simulation results.  
        关键词：Operational Transconductance Amplifier（OTA）;filter;Fully balanced filter   
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      • Study of a Reversible Ternary Logic Cellular Array

        Han Shu
        Issue 2, (1994)
        摘要：This paper proposes a reversible ternary cellular array.Its properties are studied and its applications in various digital systems are also discussed.  
        关键词：Cellular array;Ternary valued logic;data encryption   
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      • 殷明玉, 张波, 段东元
        Issue 2, (1994)
        摘要：A new analytical approach for solution to the overdetermined equations of the quasi-continuous potential and field profiles of the reverse-biased p-n junctions with the elliptical cylindric coordinates is proposed in the paper.The dimensional transformation and the searching algorithm for two-interpolation and standing point are used in least-squares for increasing in calculation precision and ameliorating nonsingularity and ill-condition of the symmetric positively semidefinite matrix caused by nonlinearity of the potential and electrical field.  
        关键词：数值解法;超定方程组;电势函数分布   
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      • Institute of Microelectronics,Peking University

        Issue 2, (1994)
        摘要：北京大学微电子学研究所ＩｎｓｔｉｔｕｔｅｏｆＭｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ，ＰｅｋｉｎｇＵｎｉｖｅｒｓｉｔｙ￥／／北京大学微电子学研究所成立于１９８５年，其前身为北大物理系半导体物理专业（建立于１９５６年）和计算机系微电子学专业，它是国家集成电路应...  
          
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