最新刊期

    5 1994
    • 吴佑寿, 徐宁, 丁晓青
      Issue 5, (1994)
      摘要:This paper proposes a new clustering method for Chinese character recognition system using ANN. By use of this clustering technique,the large Chinese character set of 3755 characters can be divided into many small subsets with accuracy higher than 98%.  
      关键词:Clustering;neural networks;Chinese character recognition   
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    • 鄢勇, 金灿明
      Issue 5, (1994)
      摘要:The algorithm for finding the supporting line of two planar ploygons is a kernal algorithm in many computation geometry problems and has found wider applications in computer graphics and robotics.So far,the computation complexity of the best algorithm for this problem is O(n+m). In this paper, with the help of the properties of the convex ploygons, a fast algorithm with time complexity O(log (n+m ) )is presented and is proved to be optimal in the range of constant factors.  
      关键词:computational geometry;Planar convex ploygons;Supporting lines;Optimal algorithm   
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    • A Software Debugging Technique for Supercomputer

      钟志新, 杨学军, 黎勇
      Issue 5, (1994)
      摘要:A powerful debugging tool is needed for the software development on supercomputers.However,it’s difficult to use traditional debugging methods due to characteristics of supercomputer architecture.A software debugging technique based on debug-line is presented in this paper. This technique is not only creative in principle , but also effective in practice.  
      关键词:Supercomputer;software;Debug-line;action   
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    • A Parallel Algorithm for Labeling Image

      张德富, 陈燕平, 沈平
      Issue 5, (1994)
      摘要:In this paper, a parallel algorithm for labeling a n×n image is presented. It simplifies the previous local operation by combining parallel-shrinking and label-propogating into one phase and decreases room complexities, takes O(n) time on a linear systolic array with n PEs and gets the optimal value of the running time-number of processors product.  
      关键词:Local operation;Labeling image;systolic array   
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    • Revisiting Loop Skewing

      金国华, 陈福接
      Issue 5, (1994)
      摘要:We revisit,in this paper,the loop skewing transformation technique which was previously proposed by M. Wolfe in 1986. By means of dependence distance matrix and dependence direction matrix, we first present a generalized method of skewing multiple level perfectly nested loops.Then we analyze the effect of loop skewing on parallelism and data locality. Finally, we discuss its relation with other transformation techniques.  
      关键词:Loop skewing;Dependence distance matrix;Dependence direction matrix;parallelism;Date locality;Compiler;FORTRAN   
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    • Design of a New Type of FFT Address Generator IC

      罗文哲, 徐葭生
      Issue 5, (1994)
      摘要:Through the study of FFT signal flow graph the rules were found in the binary addresses of the data and triangle factors(WNK) while calculating FFT,and the boolean expressions were synthesized.Therefore,a new type of FFT address generator was devised. Compared with the traditional ones,it has advantages of smaller number of transistors and higher speed. The design was verified through logical simulation. By using SPICE it was proved that this circuit is able to work at 50MHz fabricated by Zμm CMOS technology.  
      关键词:FFT;Address generator;Pass-transitor logic;Barrel shifter   
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    • 李肇基, 张旻
      Issue 5, (1994)
      摘要:An analytical model tailored for analyzing the fast turn-off transient characteristics of LIGBT/LDMOS,accounting for the transient charge-distribution in the wide quasi-neutral base (QNB) of the pnp bipolar-junction transistor (BJT) and the back-injection effect. is proposed in the paper. The charge-control equation including the extraction of the excess carrier out of the QNB of the pnp BJT by the LDMOS transistor is solved and the normalized turn-off transient current is then obtained. The results give the relationships of the turn-off time from the analytical modeling with the device parameters of LIGBT/LDMOS,e.g. the ratio of width between p+ of LIGBT and n+ of LDMOS, high-injection carrier lifetime, back-injection current density and width of drift region. The modeling methodology is also applicable to the mixed CIGBT (Complementary IGBT) and others.  
      关键词:insulated-gate bipolar transistor;double diffusion MOS transistor;Transient characteristics;Charge-based model   
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    • 刘晓卫, 许铭真, 谭长华, 王阳元
      Issue 5, (1994)
      摘要:The image force effects and quantized level effects in MOS structures under high electric field stressing will cause the variations of emitting potential barrier and Fowler-Nordheim tunneling current. In this paper,this kind of potential barrier modulation and its effects on tunneling of electrons and measurement of traps in MOS structures at high electric field have been studied. Furthermore,some corrected methods with the potential barrier modulation considered are also presented in order to get more accurate results.  
      关键词:高场势垒调制效应;镜像力;表面量子化;陷阱;氧化层电流弛豫谱   
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    • 中国电子学会1994~1995年重点国际学术会议

      Issue 5, (1994)
      摘要:中国电子学会1994~1995年重点国际学术会议中国电子学会1994~1995年重点国际学术会议...  
        
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    • Development of 500A,1200V Light Triggered Triacs

      赵善麒, 高鼎三, 王正元
      Issue 5, (1994)
      摘要:A 500A, 1200V, 40mm dia. light triggered triac has been developed ,This device has the characteristics of minimum light triggering power of less than 15mW,on-state voltage of less than 1. 6V ,commutating dv/dt capability of more than 100V/μs and commutating di/dt capability of more than 50A/μs.The structure features,theoretical studies on the light trigger characteristic and key manufacturing technologies of the device are presented in this paper.  
      关键词:Light triggered triac;Light sensitive gate;Ligh triggering sensitivity;Commutating dv/dt capability;Commutating di/dt capability   
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    • Silicon Bipolar Transistors with Low-Temperature─Coefficient Current Gain

      郑茳, 吴金, 肖志雄, 魏同立
      Issue 5, (1994)
      摘要:With the development of high reliability electronic techniques,it is needed that current gain HFE of the silicon bipolar transistors has very low positive temperature coefficient.The bandgap narrowing effect resulted from the emitter heavy doping is the main reason of the high positive temperature cofficient of current gain in the common silicon bipolar transistors. In order to reduce this positive temperature cofficient,some novel structures such as polysilicon emitter contact,polysilicon emitter and amorphous silicon emitter are adopted. The experimental results indicate that the high temperature rising rate and the low temperature falling rate of HFE in these novel transistors are all less than 20% ,and some are even less than 10%.  
      关键词:Silicon bipolar transistors;current gain;Low temperature cofficient   
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    • An Oscillating Limiter Demodulator for Satellite Video Reception

      Diao Ming
      Issue 5, (1994)
      摘要:This paper describes the fundamental principle of the oscillating Iimiter and the operating condition,and introduces an oscillating Iimiter demodulator for satellite video reception,which is used to receive USSR714 MHz satellite broadcasting TV signals.Experimental result shows that its feature is good and threschold level improvement is above 3dB.  
      关键词:Threshold extension;Oscillating limiter;Tracking filter   
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    • A Survey on Multi-Sensor Information Fusion

      Shao Yuan, He Fachang, Luo Zhizeng
      Issue 5, (1994)
      摘要:Owing to the limits of a single sensor and uncertainties of sensor data,information fusion of multi-sensor system is frequently used to acquire a representation of environment and objects. In this paper,three main research topics of multi-sensor information fusion ,i. e. representation of information, framework and means of fusion, and control off fusion, are discussed. Also, several typical results are introduced to describe the advances in those fields. Finally,our research strategies on multi-sensor information fusion are presented according to international research trends.  
      关键词:robot;multi-sensor;Information fusion   
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    • 周洁, 王永康, 孙景兰, 卢励吾, 吴汲安
      Issue 5, (1994)
      摘要:The interaction between hydrogen and centers in silicon introduced by 4d trasition impurities was investigated ,and the order of sensitivity of these deep centers to hydrogen passivation was obtained. From the point of view of hydrogen passivation ,we have got evidences to support the identical center suggestion for the levels related in p-Si: Pd and n-Si : Rh ,and we suggest that E(0.53)and H(0. 36) in Si : Mo have this kind of property. The mechanism of hydrogen passivation is also discussed through the charge states of atomic hydrogen in silicon.  
      关键词:Silicon;Hydrogen passivation;4d Tran-sition impurity;Deep level transient spectroscopy   
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    • 张鹏飞, 侯东彦, 杨景铭, 钱佩信, 罗台秦
      Issue 5, (1994)
      摘要:The melting and solidifying behaviors of a thin Si film have been studied. The morphological imperfections can be inhibited by a higher thermal gradient at the melting front and the density of constitutional defects (as grainboundaries and dislocations)can be decreased by a lower thermal gradient at the solidifying front.A novel structure of graphite heater has been invented to meet the different demands on radiative heating. Successful fabrication of high quality SOI has been carried out.  
      关键词:SOI;ZMR;Semiconductor material .   
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    • TFSOI/CMOS ICs Simulation Using SPICE

      王阳元, 奚雪梅, 甘学温, 程玉华, 李映雪
      Issue 5, (1994)
      摘要:A charge-based model for dc and transient circuit simulation has been implemented in SPICE,thereby enabling proper simulation and CAD of SOI/CMOS integrated circuits to be realized. The utility and computing efficiency of the SOIMOSFET model implementation are demonstrated by simulating several representative SOI/CMOS circuits. It has been shown that the shorter channel-length and the thinner Si-film thickness,the faster SOI/CMOS circuit speed,which can compensate low speed caused by decreased power voltage.  
      关键词:SPICE circuit simulation;Thin-film SOI/CMOS circuits;Implementation of device models   
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    • Some Results of Two Dimensional Deep Submicron MOSFET Simulation

      Yu Shan
      Issue 5, (1994)
      摘要:When device size being scaled down to deep submicron,it is requred to re-determine the position of LDD and conventional MOSFET in deep submicron VLSI because of the supply power scaling down.Based upon the principal device mathematic equations,two dimensional stable numerical simulation has been conducted to depict the device characteristics,hot carriers effect and short channel effect of LDD and conventional MOSFET in deep submicron region. The restrictions of deep submicron LDD in deep submicron VLSI fabrication has also been assured.  
      关键词:Deep submicron devices;device simulation   
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    • 李智勇, 沈振康, 刘鲁勤
      Issue 5, (1994)
      摘要:A new centroid tracking method with high accuracy for small and slowly moving target is presented It is based on measurements of target image centroid position and offset from image sequenccs. An improved filtering model is proposed for real time processing of the measurement data to reduce the effect of image intensity and discretization noise. Subpixel tracking accuracy is achieved.  
      关键词:target tracking;Image sepuence;filtering   
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    • Analysis of a Polling Model with Exhaustive Service

      赵东风, 郑苏民
      Issue 5, (1994)
      摘要:This paper analyzes the polling model with exhaustive service. By the imbedded Markov chain theory and the probability generating function method,the mean message waiting time and the parameter values are explicitly obtained. Finally,the simulation results are given. The results indicate that minor errors are introduced by the established system.  
      关键词:polling system;Discrite time;Messge;Queuig model   
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    • Wang Guangyi
      Issue 5, (1994)
      摘要:This paper presents a topological method for analysing RC- nullor networks. In this method, the direct generation for inedfinite admittance matrix is studied emphatically.  
      关键词:RC-nullor metworks;Topological analysis;Indefinite admittance matrix   
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    • 中国电子学会1994年─1995年重点国内学术会议

      Issue 5, (1994)
      摘要:中国电子学会1994年─1995年重点国内学术会议中国电子学会1994年─1995年重点国内学术会议...  
        
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    • HARBIN INSTITUTE OF TECHNOLOGY

      Issue 5, (1994)
      摘要:哈尔滨工业大学HARBININSTITUTEOFTECHNOLOGY哈尔滨工业大学(以下简称哈工大)位于北方名城哈尔滨市,创建于1920年,建国后,1951年由政府确定为我国高等教育学习苏联的两所试点院校之一,1954年作为国家首次确定的6所重点大学...  
        
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