最新刊期

    2 1995
    • The Fuzzy Adaptive Algorithm for Feed-Forward Multilayered Neural Network

      李松银, 郑君里
      Issue 2, (1995)
      摘要:A fuzzy adaptive BP algorithm is proposed by means of combining fuzzy set theory with artificial neural network.The speed of convergence and the network performance of this algorithm are better than other known modified BP algorithms.A new way combining neural networks and fuzzy systems is explored by means of this work.  
      关键词:artificial neural networks;Feed-forward multilayered neural network;BP algorithm;Fuzzy systems.   
      2
      |
      142
      |
      24
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34261751 false
      更新时间:2025-12-08
    • Issue 2, (1995)
      摘要:机载合成孔径雷达实时数字成像处理器通过鉴定AirborneSyntheticApertureRadaeReal-TimeProcessorProvedtobeAutheuotic¥//(中科院电子所二室,北京100080)我国合成孔径雷达系统研究又向...  
        
      2
      |
      66
      |
      14
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34258962 false
      更新时间:2025-12-08
    • SORTER:A Sorting Engine Based on"Negative Memory"Concept

      杨利, 吴涛, 周兴铭
      Issue 2, (1995)
      摘要:This paper describes the design and analysis of the architecture and the algorithms of a novel sorting engine-SORTER based on so called"Negative Memory"concept.Without performing any comparison,this SORTER avoids the O(n log n) lower bound constraint on ordinary sorting algorithms.SORTER uses only read and write ,the two basic operations,to perform elements sorting.In terms of the number of memory access,SORTER achieves the complexity of O(n).In addition,using the fundamental sorting algorithm with slight modifications,SORTER can also be used for majority of database operations with complexity O(n).  
      关键词:Negative memory;Quick sorting;SORTER;RDBMS(Relational Data Base Management System)   
      2
      |
      18
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34258985 false
      更新时间:2025-12-08
    • Semantics of Integrated Language FOPL

      Mei Hong
      Issue 2, (1995)
      摘要:Functional object-oriented programming language FOPL is an intelligent integrated language which supports both functional programming style and object-oriented programming style.Its denotational semantics is described on a universal abstract space.Moreover,a call-by-value operational semantics to which the denotational semantics is computationally correspondent is discussed.  
      关键词:Functional programming;Object-oriented programming;Integrated language;Denotational semantics;Operational semantics   
      2
      |
      35
      |
      1
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34259096 false
      更新时间:2025-12-08
    • FTSIM-A Switch Level Fast Timing Simulator

      何磊, 章开和, 唐璞山
      Issue 2, (1995)
      摘要:This paper presents a switch level fast timing simulator FTSIM to verify the logical behaviour and timing performance for MOS digital circuits of both prelayout and post-layout.Circuits are first partitioned into DCCs(DC-Connected Component),then the charging and discharging of each output node of a DCC is modeled by a macromodel retaining the nonlinearity of transistors and its characteristic equation is computed by a voltage incremental technique.Besides,a heuristic eventdriven self-adaptive window algorithm is proposed to speed up waveform convergence when feedbacks present at DCC level.Testing results with benchmark circuits from industry show a speedup of 2 to 3 orders of magnitude over SPICE for medium scale circuits with typical 5% timing accuracy loss,and the speedup is nearly linear up with the circuit size.  
      关键词:VLSI CAD;Switch level simulation and verification;Fast timing simulator   
      2
      |
      40
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34259357 false
      更新时间:2025-12-08
    • Silicon-Based Micro Electrostatic Motors

      孙夕庆, 李志坚, 刘理天
      Issue 2, (1995)
      摘要:Some design considerations,fabrication issues and structure improvements of siliconbased micro electrostatic motors are described.On-chip detection of micromotor rotational speed,which is significant for studying micromotor dynamics and constituting MEMS,is realized by integrating photovoltaic devices on silicon substrate beneath the rotors.A cone bearing structure,which reduces the friction,is obtained by use of SiO2/PSG composite sacrificial layer technology.The preliminary measurement results show that the mininum starting voltage of micromotors is 93V and the maximum rotational speed is more than 239 rps at 180V driving voltage.  
      关键词:Micro electrostatic motor;Micro electromechanical system   
      2
      |
      628
      |
      8
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260152 false
      更新时间:2025-12-08
    • Light-Emission Mechanism of MIM Tunneling Junctions

      蔡益民, 孙承休, 高中林, 魏同立
      Issue 2, (1995)
      摘要:MIM junction’s basic structure and its light-emission mechanism are introduced.We compare the experimental result with the power distribution of SPP slow mode wich is obtained by the current fluctuation theory,and get a conclusion that the slow mode plays the most important role in the light-emission process.At last,we explain the negative resistance phenomenon in MIM junction’s I-V curve with above conclusion.  
      关键词:MIM junction;Surface plasmon polariton(SPP) wave;Surface roughness   
      2
      |
      91
      |
      1
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260268 false
      更新时间:2025-12-08
    • Computer Simulation of I-V Characteristics of SOI MOSFET

      王煜, 张鹏飞, 侯东彦, 钱佩信, 罗台秦
      Issue 2, (1995)
      摘要:The I-V characteristics of SOI MOSFET are studied and an analytic model for SOI MOS devices is established.The model,which is valid for any SOI film thickness and each kind of front/back-gate bias conditions,has such advantages as analytic expression,clear physical meaning,simple and quick calculation,and easy extraction of used parameters.For each SOI film thickness or back gate bias,the suitable expression will be adopted automatically by the computer.The simulation results are well consistent with the experimental data.  
      关键词:Computer simulation;SOI/MOSFET   
      2
      |
      68
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34259511 false
      更新时间:2025-12-08
    • A Rule-Based Neural Network System

      王继成, 吕维雪
      Issue 2, (1995)
      摘要:A rule-based neural network structure is presented.This structure uses both rule and neural network technology that makes the knowledge included in neural network structure can be expressed in rule form and increases the interpretation ability of neural network.In order to prove the advantage of the rule-based neural network structure,a rule-based neural network ECG analysis system is realized.The experiment results have shown that this system has better quality than the customary ECG analysis methods in both the analysis efficiency and the system adaptive ability.  
      关键词:neural network;Rule-based system;ECG analysis;Pattern classification   
      2
      |
      174
      |
      8
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260942 false
      更新时间:2025-12-08
    • The Transporting Characteristics of RCJL Superconducting Logical Gate

      汤玉生, 余兴, 蒋建飞
      Issue 2, (1995)
      摘要:RCJL is a kind of typical superconducting logical gate,whose state is controlled by injection current.The transporting characteristics of RCJL is simulated by Runge-Cutta method.Effects of edge-excitation, damping action and separatory resistors between gates on the transport are analysed in detail.  
      关键词:Superconducting gate;Edge-excitation;Separatory resistors   
      2
      |
      15
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260531 false
      更新时间:2025-12-08
    • Study on Properties of Au-Doped Silicon by Photovoltaic Method

      Zhu Wenzhang
      Issue 2, (1995)
      摘要:The minority carrier lifetime of Au-doped silicon has been measured by photovoltaic method.The Au-doped concentrations are between 10 ̄(12) ̄ 6.62×10 ̄(15)cm ̄(-3),covering four orders of magnitude.On the basis of the systematic measurement and the statistical calculation of minority carier lifetime of two kinds of N-type Au-doped sihcon with different resistance,the views on the properties of Au in silicon are presented.The degeneracy factors and the interrelation between Au donor and acceptor are taken into account in statistical calculation. Both experimental and calculated results show that Au doping at high concentration can change N-type high-resistance silicon into P-type.  
      关键词:掺金硅;少子寿命;光伏;深能级   
      2
      |
      75
      |
      1
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34259640 false
      更新时间:2025-12-08
    • 吴训威, 沈继忠
      Issue 2, (1995)
      摘要:Modulo subtraction and modulo division,the inverse operations of modulo addition and modulo multiplication,are proposed and discussed.These two new operations extend the domain to negative and numeric for modulo-algebra,by which the symmetric modulo-algebra system and the numeric modulo-algebra system are esblished.By discussing the function expression of quinary logic,it is shown that these two new operations are necessary for founding a modulo-algebra system with complete functions.  
      关键词:Modulo-algebra;Modulo subtraction;Modulo division;Multivalued logic   
      2
      |
      67
      |
      12
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34261190 false
      更新时间:2025-12-08
    • A Unified Approach to Mode DC-DC Switching Converters

      Gao Chao
      Issue 2, (1995)
      摘要:Pulse-waveform integral approach-a unified approach to model switching converters for the types of PWM,quasi-resonance and series(parallel) resonance is put forward in the paper.With the approach,the speciality of a converter can be embodied,and a unified standard may be set up for the analyses and comparisons among the converters.As examples,PWM and quasi-resonant converters are used to discuss the principle of the approach.The results are compared with those in the relative paper.Computer aided andyses ae made confirm the correctness.  
      关键词:DC-DC;Converter;Unified topology;Sampling;Integral   
      2
      |
      305
      |
      23
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34262245 false
      更新时间:2025-12-08
    • Progress in Nanoelectronics

      Lin Hongyi
      Issue 2, (1995)
      摘要:In the last decade of the century,a brand-new field of nano scale science and technology has emerged in the world which includes nanoelectronics,nanometer scale materials,nanobilogy,nanomechanics,nanomicroscopy and nanofabrication etc.In this paper,the origination,present state and prospect of nanoelectronics have been discussed.The final goal of nano scale science and technologyis to manufacture products that possess special functions from atoms or molecules directly.This will strikingly change human models of production and living conditions.  
      关键词:Nano scale science and technology;Nanoelectronics;Nanometer scale materials   
      2
      |
      379
      |
      24
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34262306 false
      更新时间:2025-12-08
    • Standard of Mini-Low Laser Power

      Issue 2, (1995)
      摘要:微小激光功率标准StandardofMini-LowLaserPower¥//(电子工业部第四十一研究所,蚌埠233006)微小激光功率标准是利用QED-200硅光电二极管自校准技术而建立的,这是一种新的测量激光功率的方法,它完全不同于统统的以黑体热...  
        
      2
      |
      41
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260441 false
      更新时间:2025-12-08
    • Analysis and Experiment of A-LOC GaAlAs/GaAs Laser

      康晓黎, 李锡华, 朱丽津, 宋南辛
      Issue 2, (1995)
      摘要:The advantages of asymmetric large optical cavity(LOC) structure to raise the output ooptical power of GaAlAs/GaAs laser are analysed.The parameters of A-LOC,which are used to get the maximum output optical power and fundamental transverse mode,are calculated,We fabricated the A-LOC GaAlAs/GaAs laser based on the above analysis.The output optical power(cw) without coating is above 85mW.This resultis agrees with the theoretical calculation.  
      关键词:Laser;Large optical cavity(LOC);asymmetry   
      2
      |
      32
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260381 false
      更新时间:2025-12-08
    • A Noval InGaAsP/InP Frequency Divider Using Electronic Tuning

      蔡伯荣, 刘永智, 庞涛, 叶玉堂
      Issue 2, (1995)
      摘要:A noval frequency divider with four frequencies using electronic tuning is proposed.The device structure is composed of an InGaAsP/InP double hetero-structure ridge waveguide,a distributed Bragg reflector configuration and a pair of electrodes.The freqency division has been demonstrated by the waveguide refractive index change induced by electro-optical effect.The research result shows:At 1.55μm wavelength,when the frequency division gap is 8GHz,the external bias voltages for four frequencyes are about 0,4,8 and 12 volts respectively.  
      关键词:Frequency divider;Electronic tuning;DH-RWG-DBR structure   
      2
      |
      26
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34259968 false
      更新时间:2025-12-08
    • Issue 2, (1995)
      摘要:多模渐变光纤数值孔径测试系统TheMeasurementSystemofNumericalApertureforGraded-IndexMultimodeFiber¥//(电子工业部第四十一研究所,蚌埠233006)数值孔径是多模光纤的一个重要参数,...  
        
      2
      |
      109
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260464 false
      更新时间:2025-12-08
    • 阙端麟, 陈修治, 徐冬良
      Issue 2, (1995)
      摘要:Based on both numerial analysis and experimental data,a surface correction formula for minority lifetime measurement of silicon crystals is proposed using high frequency photoconductive decay stimulated by monochomatic light.  
      关键词:silicon;Minority carrier lifetime;Photoconductive decay   
      2
      |
      141
      |
      3
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34262144 false
      更新时间:2025-12-08
    • Study of Duo-Transistor Negative Resistance Device

      魏希文, 王美田, 李建军, 李雪梅, 李凤银, 王化雨, 曹体伦
      Issue 2, (1995)
      摘要:The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.Based on this,a Two-terminal Bidirectional Negative Resistance Device(TBNRD) is fabricated and the theory of the negative resistance is studied.  
      关键词:Negative resistance device;Two-terminal device   
      2
      |
      42
      |
      7
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34261296 false
      更新时间:2025-12-08
    • The Analysis and Design of the Multi-Valued CMOS Current Multiplier

      杨洪利, 靳东明, 李志坚
      Issue 2, (1995)
      摘要:By using the current-mode CMOS circuit,the multi-valued multiplier of high speed and high density is proposed.A 3×3 bit 8-valued multiplier is designed and the ideal regult is obtained.  
      关键词:multi-valued logic;multiplier;Full adders;Current-mode CMOS circuits   
      2
      |
      73
      |
      4
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260484 false
      更新时间:2025-12-08
    • 18×18 Parallel and Pipeline Multiplier Chip Design

      徐加全, 候朝焕, 张骥
      Issue 2, (1995)
      摘要:The full custom chip design of 18×18 Modified Booth algorithm and Wallace Tree multiplier is introduced.The chip adopts 1.2μm CMOS technology.After the fabrication of our multiplier, one chip has passed through all tests and the maximum frequency is 36 MHz according to the tests.  
      关键词:Full custom design;Booth decoder;Wallace Tree   
      2
      |
      193
      |
      13
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260754 false
      更新时间:2025-12-08
    • Huang Qingan
      Issue 2, (1995)
      摘要:Scaled down rules for Spindt-type vacuum microtriodes are presented with the constant electric(CE) field principle.It has been pointed out that the performances of the Spindt devices are improved and the operating voltages are lowered with the CE scaled down rules.  
      关键词:Vacuum microelectronics;Field emission array;Scaled down   
      2
      |
      53
      |
      3
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260569 false
      更新时间:2025-12-08
    • 电子部13所1994年科研成果简介

      Issue 2, (1995)
      摘要:电子部13所1994年科研成果简介在1994年12月电子部13所第34次科研成果鉴定会上,专家们评审出具有国际先进水平的成果1项,达到九十年代初期国际同类产品水平的7项,国际八十年代中后期水平的15项,国内领先水平23项,国内先进水平18项。·多层陶...  
        
      2
      |
      15
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260617 false
      更新时间:2025-12-08
    • γ Radiation Effects on BF2 ̄+ Implanted Si-Gate PMOSFET

      张廷庆, 刘家璐, 张正选, 赵元富
      Issue 2, (1995)
      摘要:The relation between threshold voltage shift of BF2 ̄+ implanted Si-Gate PMOSFET and total γ-radiation dose has been systematically studied,and the mechanism of γ-radiation hardness for BF2 ̄+ implantation has also been analysed in detail.The study shows that BF2 ̄+ implantation is one of the new methods on γ-radiation hardness.  
      关键词:BF2 ̄+;Ion implantation;γ-radiation;Si-gate PMOSFET   
      2
      |
      35
      |
      5
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260687 false
      更新时间:2025-12-08
    • HCE:A Hierarchical Circuit Extractor For VLSI

      张顺茂, 唐璞山
      Issue 2, (1995)
      摘要:The hierarchical circuit extractor(HCE) is developed on the basis of edge-based scanline algorithm.The HCE is much faster(for actual designs) than the methods that ignore hierarchy.And the HCE can process non-manhaton pattern.The system is implemented on HP9000/834 graphic workstation under the industrial standard software development environment such as UNIX operation system,X windows.C language and Ethernet network for the system portability,maintenance and redevelopment.  
      关键词:Graphical boolean opeation;Scanline algorithm;Circuit extractor   
      2
      |
      35
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34261667 false
      更新时间:2025-12-08
    • VLSI Parallel Computation of 2-D Orthonormal Wavelet Transform

      Chen Leng
      Issue 2, (1995)
      摘要:A VLSI architecture for 2-D discrete orthonormal wavelet transform is presented.The 2-D signal array is partitioned into nonoverlapping groups of rows.All rows in a partition are processed in parallel,and consecutive partitions,multiple levels and even multiple wavelet transform problems are computed in pipeline.  
      关键词:wavelet transform;VLSI parallel architecture   
      2
      |
      59
      |
      7
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34261399 false
      更新时间:2025-12-08
    • Design of a Fast Multiplier Used in 32kb/s ADPCM

      韩雁, 宋杭宾, 姚庆栋, 戴文琪
      Issue 2, (1995)
      摘要:We present the logic design of a high speed multiplier used in the ASIC for the 60 channel 32kb/s ADPCM converter.We also discuss the ways to promote the operation speed.Through optimum design,the multiplier features a high speed,the circuits are not complicated,and the techniques to preduce the chip are simple.  
      关键词:Float point multiply;Pipeline structure;CCITT G.721 Recommendation   
      2
      |
      53
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260128 false
      更新时间:2025-12-08
    • On the Fuzzy Synthetic Judgement to the Performance of Electronic Products

      丁瑾, 胡健栋
      Issue 2, (1995)
      摘要:Fuzzy theory is used to judge synthetically on the performance of electronic products so that the performance-price ratio is explained at quantity.  
      关键词:Fuzzy judgement;Performance-price ratio;reliability   
      2
      |
      64
      |
      16
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34261710 false
      更新时间:2025-12-08
    • Timing Driven Floorplanning

      戚肖宁, 冯之雁, 严晓浪
      Issue 2, (1995)
      摘要:In this paper,we present the idea of timing driven floorplanning.While optimizing the interconnection delay between cells using improved GFDR,We use nonlinear programming method to reduce the cell delays and interconnection delays in critical paths.The result shows that it is an effective method for optimizing layout delay of VLSI.  
      关键词:VLSI;Timing driven layout;floorplanning   
      2
      |
      33
      |
      5
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34261539 false
      更新时间:2025-12-08
    • Raman Spectra Study of Strained SiGe Alloys

      顾书林, 张荣, 韩平, 王荣华, 郑有斗
      Issue 2, (1995)
      摘要:Spectra has been employed to investigate the features of strained SiGe alloys deposited by Rapid Thermal Process and Very Low Pressure Chemical Vapor Deposition(RTP/VLPCVD) method.Auger Electron Spectroscopy has been used to determine Ge composition in SiGe layer.The Ge atom in high Ge composition SiGe alloy distributes more homogeneously and randomly than low Ge composition one.The hydrogen dilution of reaction gases and the full relaxed strain make Ge atom distribute homogeneously in SiGe alloy.These results have been explained by the influence of strain effect,atom migration and hydrogen coverage.  
      关键词:aman spectra;SiGe alloy;Ge oomposition   
      2
      |
      57
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34261094 false
      更新时间:2025-12-08
    • 朱晓维, 陈忆元, 李嗣范
      Issue 2, (1995)
      摘要:In this paper,the W-Band Optically Controlled Subharmonic Gunn diode oscillator is presented.The semiconductor Si piece is loaded in the fundamental cavity of the optically controlled oscillator.The Si piece in the oscillator is illmninated by GaAs/GaAlAs laser emitting at a wavelength of 0.863μm through optical fiber.The optical turning frequency shift of 7MHz is observed in experiment.  
      关键词:Optically controlled oscillator;Millimeter wave oscillator;Photosensitive semiconductors.   
      2
      |
      61
      |
      0
      <HTML>
      <Meta-XML>
      <引用本文> <批量引用> 34260893 false
      更新时间:2025-12-08
    0