最新刊期
卷 ， 期 2 ， 1996
- 摘要：In this paper,an object-oriented language,called BDOL,is introduced.BDOL,which is a hybrid language supporting programming in different languages such as C+ +,Smalltalk and CLOS,can be used as specification language,design language and programming language.It is flexible for use,powerful for expression and efficient for software reuse.关键词：Object-oriented language;Hybrid language;software reuse;Object model2|40|1更新时间：2025-12-08
- 摘要：In high-level synthesis,trade-off of speed and cost is decided by scheduling,which is an NP-complete problem,In this paper,it is regarded as a multi criteria problem,An algorithm based on the maximum utility-ratio of the function units is put forword,Using this algorithm,optimal or near optimal solution can be gained with lower computing complexity,It can solve not only the problem under the time constraints,but also that under the cost contraints.关键词：scheduling;Multi criteria optimization;Utility ratio of the function units2|32|3更新时间：2025-12-08
- 摘要：From the multi-longitudinal-mode rate equations of semiconductor laser diode,based on the assumption that the spectrum as a function of wavelength is of Gauss’s distribution shape,a simple circuit model for mulit-longitudinal-mode lasers is presented,This model is very suitable for the computer-aided analysis of OEIC.It can be introduced into the existing simulator and can be used to develop new simulator.By using this model,the DC,AC and transient characteristics of a TBH-LD are studied.The simulating results agree well with the reports.The dependence of threshold and mode spectra on the cavity length is also given.关键词：Multi-longitudinal-mode laser;Circuit model;Computer-aided analysis2|146|8更新时间：2025-12-08
- 摘要：The heterostructure intervalley transferred electron devices produced by a band mixing quantum well composed of direct gap GaAs and indirect gap AlAs is introduced in this paper.The structure of this new millimeter wave oscillating diodes and its main oscillating behavior are described briefly.It can produce up to 320mW at 8mm wave band with the highest conversion efficiency of 8%.Under the pulse operation the largest output power of 2W with efficiency of 10% has been achieved.The function of oscillating frequency and output power versus bias voltage are emphasized.At last we briefly describe the electric field computed by a computer simulation program and the microwave operation model for forward and reverse- biased devices,from which the oscillating behavior mentioned above has been explained. The heterostructure intervalley transferred electron effect and its devices have been thoroughly analyzed through this work.关键词：Heterostructure intervalley transferred electron device;Oscillating behavior for forward and reverse biased devices;Operation model of heterostructure intervalley transferred electron device2|66|0更新时间：2025-12-08
- 摘要：This paper describes the experimental equipment and technical process of laser-recrystallization for three dimensional integrated circuit（3D-IC）,reports the experimental results of local recrystallization by laser single scanning on samples with reflective-stripe structure,and makes some discussion about these results.The experimental results indicate that the quality of recrystallization is related to laser power.preheating temperature,width of stripes with high reflectivity and scanning velocity of laser.Also,the stability of technique affects the quality.With technology of local recrystallization by single laser scanning, long single-crystal SOI（silicon-on-insulator） stripes which can be used to make high-quality MOSFET have been obtained.关键词：Three-dimensional integrated circuits;Silicon-on-insulator;Laser-recrystallization2|25|3更新时间：2025-12-08
- 摘要：A new optimal parameter tolerance assignments model and method of integrated circuits are proposed in this paper.With an accuracy penalty function method,the new method can solve a special nondifferentiable optimization problem.This method can not only find a satisfactory feasiable point of DCTT statistical optimization problem,but also provide optimal results of tolerance assignments.It can be applied to solving the functional optimization problems of IC’s and other fields关键词：Integrated circuit design;Tolerance assignment;Statistical optimization.2|43|0更新时间：2025-12-08
- 摘要：The growth in chip densities threatens the effectiveness of today’s mask verification tools with prohibitive.runtime.This paper investigates a new architecture to accelerate VLSI mask checking and presents a hardware implementation of the edge sorting operation used in the scanline algorithm.The whole system is implemented on a print circuit board which can be inserted into one of the slots of the personal computers.The testing results show that the hardware can offer speedup of one magnitude.关键词：VLSI;Mask verification;Hardware2|45|1更新时间：2025-12-08
- 摘要：In view of inconsistency between absolute and relative indicators and no consideration for random life cycle,varying reliability and time value in static estimation , dynamic economic benefit from investment on reliability,is simulated and estimated by means of dynamic model for estimation and new indicator of investment on reliability in this paper.关键词：Reliability investment;dynamic;Economic benefit;Simulation estimation2|40|2更新时间：2025-12-08
- 摘要：The implementation techniques for hash-based parallel join algorithm against a novel generic parallel architecture is studied and a performance evaluation model is established,which models the overlap of operations of the three major system resources（CPU,disk and interconnection network）.In light of this model,the performance of the parallel hybrid hash join algorithm（called PHHJR）and its variation which replicates the smaller relation（called PHHJR） are intensively analysed.Based on symmmetry bit vector filter concept,a new technique for accelerating join operations is proposed and compared with the traditional bit vector filter.The analysis shows that the symmetry bit vector filter can outperform traditional bit vector filter.关键词：Parallel join;parallel architecture;Symmetry bit vector;performance evaluation;Overlap2|43|1更新时间：2025-12-08
- 摘要：SOI gate array is designed in Daisy Design System and developed on thin film fully depleted SIMOX materials in 1.5μm CMOS/SOI technology.Some frequency dividers and ring oscillators are built on it.The propagation delay time is 430ps.We find that the gate array can work perfectly at Vdd=2.5V.关键词：Gate array;TFD;SOI;SIMOX2|44|3更新时间：2025-12-08
- 摘要：A novel image memory system is proposd,which permits p×q block access at any location of the image array.The memory system,which is based on the new memory module assignment function and address assignment function,consists of pq memory modules.The address calculating circuit is very simple and consists of three adders and pq 4:1multiplexers,which calculates pq addresses for the pq memory modules in parallel.Only one data routing circuit is needed in the proposed memory system. which routes the data efficiently between the data register and the memory modules both in the write cycle and in the read cycle.Thus,the proposed memory system is more efficient and simple than other memory systems which permit p×q block access.关键词：image processing;Memory system;Address calculating circuit;Data routing circuit2|26|1更新时间：2025-12-08
- 摘要：The Si3N4 thin films have been prepared by the ECR-PECVD technology under different deposition temperatures.The refractive index and thickness of the Si3N4 thin film have been calculated with the transmittance curve of the Si3N4 thin film,and the results agree with experimental measure.The results show that the density and refractive index increase with the increasing deposition temperature,the radial thickness nonuniformity of the Si3N4 thin film is about ±5% in the range of φ60mm.The microhardness has been measured.The photoluminescence effect of the Si3N4 thin film has been measured by the fluorescence spectrophotometer.The application of the passivation film of the superfrequency large power semiconducting transistor has been preliminarily investigated.关键词：ECR-PECVD;Si3N4 passivation film;Optical properties2|145|8更新时间：2025-12-08
- 摘要：Based on the two dimensional simulations,the partitioned five regions of the forward I-V characteristics for Emitter-Switched Thyristor（EST） have been proposed.The relationships between the output I-V characteristics and the structual parameters of the device in each region have been analyzed in the view of the cross section and equivalent circuit of EST.It is shown that the simulation results and analytical results agree well with each other.By comparing of the experimental、analytical and simulation results,the reasons for the difference between the experimental results are given out.关键词：Emitter-Switched Thyristor;Two dimensional simulation;Analysis2|59|1更新时间：2025-12-08
- 摘要：Through numerical simulation of bidirectional negative resistance device（BNRD）,the internal picture of BNRD to produce negative resistance has been analyzed.The results show that:1.The amplitude of the negative resistance curve becomes large as the thickness of the high resistance collector region decreases or the dopant concentration of substrate increases.2.The peak of the negative resistance curve decreases as the dopant concentration of base region increases.关键词：Negative resistance device;numerical simulation2|29|4更新时间：2025-12-08
- 摘要：This paper reviews some classical methods on the theory of artificial neural networks and their applications in recent years.关键词：Attractor;Meanfield;Learning Law;Approximation theory;manifold3|1089|66更新时间：2025-12-08
- 摘要：The conventional reliability evaluation of lifetime tests is limited with the development of electron devices toward excellent performance,small size and high reliability.It is shown from a lot of recent evidences that noise in electron devices is a sensitive measure of various reliabilitydependent defects,and hence noise measurement is expected to be a general,fast and nondestructive tool to characterize reliability in these devices.A review of recent development on the new technique is presented in this papar.关键词：electron device;noise;reliability;defect2|279|31更新时间：2025-12-08
- 摘要：A procedure for omni-automatic design of MIC MES FET amplifiers is presested.All the initial considerations and the topology of matching networks,which usually must be determined by designer himself,can be computer-aided determined automatically by this knowledge-based intelligent design method,therefore,the design quality is improved.关键词：MIC;amplifier;Automatic design;Knowledge-based;Intelligent design2|34|0更新时间：2025-12-08
- 摘要：The formation of ultrashallow junction and ultrathin active layer is demanded for intergrated circuit development to satisfy the requirements of high speed and high densrty of device.Low-energy ion implantation is very effective in this usage.This paper presents the fabrication of silicon ultrashallow junction and GaAs ultrathin active layer with thickness no more than 0.1μm by lowenergy implantation as well as the results of their applications in some devices.关键词：Low-energy implantation;Ultrashallow junction;Ultrathin active layer2|102|0更新时间：2025-12-08
- 摘要：The improvement of the secondary electron emission coefficient and field emission characteristice of Cu,and suppression of emission from Mo grids by ion beam technology were investigated.The influence of work function on electron emission properties was measured and discussed.Results show that the ion beam technology is a prospective and practical process for improving the electron emission characteristics.关键词：Ion beam technology;Electron emission characteristics;work function2|58|5更新时间：2025-12-08
- 摘要：In order to remove irradiation damage and achieve the exact target resistivity,the annealing technology is usually used for NTDFZSi at 750～850℃- 2h.It is found in practice that the resistivrty of NTDFZSi annealed with normal technology decreases about 10%～30% by annealing above 1150℃-5h.The results indicate that the excess carriers are generated in NTDFZSi for the annealing temperature above 1150℃.In this paper,the generation mechanism of excess carriers has been investigated,and the relationship between the excess carriers and the irradiation flux,quality of asgrown FZSi has been discussed.The experimental results show that the concentration of excess carriers increase when the concentration of as-grown micro-defects and irradiation flux are high.We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation,and may be affected by the as-grown defects of FZSi.关键词：NTDFZSi;Irradiation damage;Micro-defects;Thermal stability of resistivity;Carrier3|29|0更新时间：2025-12-08
- 摘要：An "Integrated Device and Circuit Simulator"for thin film（50～400nm） submicron（0.5～1.0μm） and deep submicron（0.15,0.25 and 0.3.5μm）CMOS/SOI integrated circuits has been developed.This simulator combines device numerical simulation with circuit numerical simulation by coupling connecting stage of SOI MOSFET using integrated numerical model.The characteristics and mechanism of thin film submicron and deep submicron CMOS/SOI ring oscillators are discussed.The simulation results are identical with experimental results.关键词：Thin film;CMOS/SOI;Integrated numerical model;Ring oscillators2|42|0更新时间：2025-12-08
- 摘要：In this paper,the millimeter wave wide-bandwidth ultra-linear sweeping technique is studied,the new theory consisting of phase-locked technique and delay-line to improve the linearity is presented,the design principle of phase-locked sweeping loop（PLSL） is deduced,and the non-dispersion delay line, digital phase-locked loop,monolithic microwave components and high-performance millimeter-wave components are used.In structure,the high-density assembly technique and SMT are utilized.The sweeping source’s main performance indexes are as follows:Bandwidth is 500MHz,linearity is superior to 0.01 %.关键词：millimeter wave;Wide-bandwidth sweeping source;Phase-locked sweeping technique;Ultra-linear2|118|5更新时间：2025-12-08
- 摘要：The formal description is presented for well-balanced mapping of irregular task problems to an MIMD system.According to the characteristics of interconnection topology of processors and the problem to be solved,the cost function suitable for well-balanced mapping is derived. The simulated annealing algorithm is then employed to find the optimal mapping solutions.关键词：mapping;MIMD;simulated annealing algorithm;Cost function2|24|2更新时间：2025-12-08
- 摘要：A scheme of fuzzy controller is proposed based on MOS-DYL integrated circurte,by using advanced fuzzy algorithm.The high speed hardware system of fuzzy logic was designed,which consists of current circurt of MOS current mirror and DYL voltage circuit in one chip.The result proves that rt is possible to reach the speed of 2×107 FIPS（Fuzzy Inferences per second）.关键词：fuzzy controller;Fuzzy inferences;DYL circuit;MOS current mirror2|42|4更新时间：2025-12-08
- 摘要：The construction,characteristics and theory of a new type of thermionic photodetector are described.It is a maiority-carrier device,which differs from conventional p-i-n photodiodes,avalanche photodiodes and photo transistors in basic structure.The main differences between this detetor and other majority-carrier devices are:①There is a large central p+ n- juncture area,whose function is similar to a hole storehouse.②In perphery of pn diode,there is a special ring frame n++ p+ n- sandwich structure.The absolute responsivrty of the new device is 1.36A/W ,while that of the ordinary diode is 0.35A/W.关键词：Thermionic photodiode;Majority carrier transmission;Silicon semiconductor device2|36|0更新时间：2025-12-08
- 摘要：The oscillation mechanism of self-heating SnO2 sintered sensor in CO gas and air is discussed and the thermal equation of the sensor resistance is given.We have obtained the approximate expression of oscillation period for sensor resistance and the necessary condition of the cause of oscillation.We have also gotten the relationship between the frequency F,the CO concentration N and the working voltage V.关键词：Sensor resistance;Reacting thermalization;Oscillation mechanism2|30|2更新时间：2025-12-08
- 摘要：This paper presents mode indices as a function of time after proton-exchanged waveguides formed by immersing x-cut LiNbO3 into benzoic acid melts for certain period of time.The measured data show that there are instabilities in PE waveguieds. The instabilities depend on fabrication parameters and operation temperature.The reasons to cause the instabilities and measures to overcome them are proposed.The measurements of infrared absorption and secondary ion mass spectrometry（SIMS）identify that our views on PE waveguides instabilities are reasonable.关键词：Proton Exchanged optical waveguide;Instability;Concentration of proton;Middle phase;Coseparation.2|42|2更新时间：2025-12-08
- 摘要：The stability of VHF-GD a-Si:H for different deposition temperatures has been investigated by photothermal defection spectroscopy（PDS）.Parameters of the defects in a-Si:H,such as,correlation energy and density of gap states.have been obtained by the numerical simulation of PDS. The results indicate that the metastable defects shift toward to the deep of the gap and correlation energy increases with the light illumination time. The Fermi level and conductivity have been recursively calculated under the electroneutrality condition,which are in fairly agreement with the experiment.The validity and reality of the simulation have been discussed.关键词：Defects in a-Si:H;Photothermal deflection spectroscopy;stability2|86|2更新时间：2025-12-08
- 摘要：There are two traditional techniques for the realization of survivor memory unit in Viterbi decoder-register exchange（RE）and trace back（TB）method.RE is not practical for the Viterbi decoder with large number of trellis states dut to the very complicated interconnections.TB needs a large quantity of buffers and has long decoding delay.In this paper a novel technique-register/three-state-gate trace back method is presented,which combines the advantages of both RE and TB and overcomes their disadvantages.It’s very suitable for VLSI implementation.关键词：Viterbi decode;Survivor memory;Register exchange;Trace back2|138|21更新时间：2025-12-08
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