基于耦合三角型拓扑的IPD高选择性带通滤波器综合设计和实验研究

刘宝光; 黄开来; 濮佳成; 俞婷婷; 程勇; 程崇虎

doi:10.12263/DZXB.20250846

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基于耦合三角型拓扑的IPD高选择性带通滤波器综合设计和实验研究

学术论文 | 更新时间：2026-05-28

- 基于耦合三角型拓扑的IPD高选择性带通滤波器综合设计和实验研究
- Synthesis Design and Experimental Study of a High-Selectivity IPD Bandpass Filter Based on Coupled Triangular Topology
- 电子学报 2026年54卷第2期页码：653-660
- 作者机构：
  
  南京邮电大学电子与光学工程学院、柔性电子（未来技术）学院，江苏南京 210023
- 作者简介：
  
  刘宝光男，1993年10月出生于江苏省淮安市。现为南京邮电大学电子与光学工程学院、柔性电子（未来技术）学院讲师、硕士生导师。在国内外发表学术论文40余篇。主要研究方向为微波电路及片上器件。中国电子学会会员编号：E190159553M。E-mail: baoguangliu@njupt.edu.cn
  黄开来男，2001年8月出生于江苏省常州市。现为南京邮电大学电子与光学工程学院、柔性电子（未来技术）学院硕士研究生。主要研究方向为MMIC功率放大器、IPD射频无源器件等。E-mail: 1224024930@njupt.edu.cn
  濮佳成男，2000年11月出生于浙江省嘉兴市。现为南京邮电大学电子与光学工程学院、柔性电子（未来技术）学院硕士研究生。主要研究方向为基片集成波导滤波器件、LTCC工艺腔体无源微波器件等。E-mail: 1804850873@qq.com
  俞婷婷女，1994年8月出生于江苏省南通市。现为南京邮电大学工程实验教学部助理工程师。在国内外发表学术论文近10篇。主要研究方向为射频与微波电路设计等。E-mail: 2456053541@qq.com
  程勇男，1970年6月生于江苏省南京市。现为南京邮电大学电子与光学工程学院、柔性电子（未来技术）学院教授、硕士生导师。在国内外发表学术论文60余篇。主要研究方向为射频与微波电路设计等。E-mail: chengy@njupt.edu.cn
  程崇虎男，1962年12月生于江苏省扬州市。现为南京邮电大学电子与光学工程学院、柔性电子（未来技术）学院教授、博士生导师。在国内外发表学术论文100余篇。主要研究方向为射频与微波电路系统等。E-mail: chengch@njupt.edu.cn
- 基金信息：
  
  国家自然科学基金(62201278);中国博士后科学基金(2024M761494)
- DOI：10.12263/DZXB.20250846
  中图分类号： TN713;TN451
- 收稿：2025-09-25，
  
  录用：2026-01-26，
  
  纸质出版：2026-02-25
- 稿件说明：
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刘宝光, 黄开来, 濮佳成, 等. 基于耦合三角型拓扑的IPD高选择性带通滤波器综合设计和实验研究[J]. 电子学报, 2026, 54(02): 653-660.

LIU Baoguang, HUANG Kailai, PU Jiacheng, et al. Synthesis Design and Experimental Study of a High-Selectivity IPD Bandpass Filter Based on Coupled Triangular Topology[J]. Acta Electronica Sinica, 2026, 54(02): 653-660.
刘宝光, 黄开来, 濮佳成, 等. 基于耦合三角型拓扑的IPD高选择性带通滤波器综合设计和实验研究[J]. 电子学报, 2026, 54(02): 653-660. DOI：10.12263/DZXB.20250846

LIU Baoguang, HUANG Kailai, PU Jiacheng, et al. Synthesis Design and Experimental Study of a High-Selectivity IPD Bandpass Filter Based on Coupled Triangular Topology[J]. Acta Electronica Sinica, 2026, 54(02): 653-660. DOI：10.12263/DZXB.20250846

摘要

针对无线通信系统对滤波器高选择性、低损耗、高带外抑制与小尺寸的需求，本文提出一种采用三角型（CT）拓扑结构的片上带通滤波器综合设计方法。该方法首先通过耦合矩阵综合法构建三谐振器耦合结构，在相邻谐振器间设置直接耦合与非相邻谐振器间引入交叉耦合，构建出特定的归一化耦合矩阵。接着，通过精确调控交叉耦合的极性与强度，形成主辅双路径干涉机制，从而在通带两侧生成可控传输零点（TZs）。此外，利用接地通孔的寄生电感

gnd

与并联LC谐振单元的串联，在带外的上阻带处额外产生一个TZ，从而显著提升了滤波器的频率选择性与带外抑制能力。在物理实现上，本文基于90 μm砷化镓（GaAs）基板，使用集成无源器件（IPD）工艺流片加工，利用多层金属结构构建的高品质因数（

值）螺旋电感（最大值约32.2），并结合金属-绝缘层-金属（MIM）电容，实现整体片上带通滤波器的电磁（EM）建模。实物经过探针台和矢量网络分析仪的测试结果表明：该片上三阶带通滤波器中心频率4 GHz、相对带宽20%，插入损耗为2.35 dB，在DC~2 GHz的下阻带和6~11 GHz的上阻带抑制水平分别优于44 dB和31 dB，表现出优异的阻带抑制性能。片上带通滤波器整体尺寸仅为

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=109257133&type=

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36.23733139

2.28600001

。该片上三阶带通滤波器的实测数据在通带的带内及带外下阻带抑制方面与电磁仿真结果具有较好的吻合度。针对实测中带外上阻带传输零点向低频偏移及抑制水平轻微变差的现象，本文进行了深入的误差溯源分析，确定其主要诱因为IPD工艺中金属层的刻蚀精度公差对微小量级电容元件（

= 0.21 pF）的影响，导致实际容值偏离设计值。尽管存在制造工艺带来的

上阻带传输零点的局部偏差，但该片上带通滤波器在带外上阻带频率范围内仍保持了优异的整体性能，充分证明了所提三角型拓扑结构在高性能片上滤波器综合设计中的有效性及其实用价值。

Abstract

Aiming at the requirements for high selectivity

low loss

high out-of-band rejection and compact size of filters in wireless communication systems

this paper proposes a comprehensive design method for on-chip bandpass filters using a coupled triangular (CT) topology. Firstly

a three-resonator coupling structure is constructed through the coupling matrix (Coupling Matrix) synthesis method

where direct coupling between adjacent resonators and cross-coupling between non-adjacent resonators are established to form a specific normalized coupling matrix. Then

by precisely controlling the polarity and strength of the cross-coupling

a dual-path interference mechanism is created

generating controllable transmission zeros (TZs) on both sides of the passband. Furthermore

by further utilizing the parasitic inductance

gnd

of the ground via in series with the parallel LC resonant unit

an additional TZ can be generated in the upper stopband beyond the passband

thereby significantly enhancing the frequency selectivity and out-of-band suppression capability of the filter. For physical implementation

the filter is fabricated on a 90 μm Gallium Arsenide (GaAs) substrate using an integrated passive device (IPD) process. High quality-factor (

-factor) spiral inductors with the maximum value of approximately 32.2 are constructed using multi-layer metal structures

and high-precision lumped-parameter on-chip bandpass filter electromagnetic model is achieved in conjunction with metal-insulator-metal (MIM) capacitors. Measured results of the on-chip filter through the probe station and vector network analyzer show that the bandpass filter achieves a center frequency of 4 GHz

a fractional bandwidth of 20%

and an insertion loss of 2.35 dB. The stopband rejections are better than 44 dB from lower stopband DC to 2 GHz and 31 dB

from upper stopband 6~11 GHz

showing excellent stopband rejection performance. The overall size of the on-chip bandpass filter is only

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=109257136&type=

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=109257148&type=

36.23733139

2.28600001

. The measured data of on-chip third-order filter shows good agreement with the electromagnetic (EM) simulation results in terms of passband characteristics and low-stopband rejection. Regarding the phenomenon of the high-stopband transmission zero shifting toward lower frequencies and the degradation of rejection levels in measurements

an in-depth error tracing analysis (Error Tracing Analysis) is conducted. It is determined that the primary cause is the influence of etching precision (Etching Precision) tolerances in the IPD process on the tiny capacitor element (

= 0.21 pF)

leading to the actual capacitance deviating from the design value. Despite local deviation of upper stopband transmission zero caused by the manufacturing process

the on-chip filter maintains excellent overall performance across a wide frequency range

fully proving the effectiveness and practical value of the proposed triangular topology in the comprehen

sive design of high-performance on-chip filters.

关键词

Keywords

references

张薇 , 吴永乐 , 王卫民 , 等 . 一种新型基于交指电容和微带电感的单层低成本宽带带通滤波器 [J ] . 电子学报 , 2023 , 51 ( 6 ): 1413 - 1420 .

Zhang Wei , Wu Yongle , Wang Weimin , et al . A novel single-layer low-cost broadband bandpass filter based on interdigital capacitors and microstrip inductors [J ] . Acta Electronica Sinica , 2023 , 51 ( 6 ): 1413 - 1420 . (in Chinese)

张德伟 , 王树兴 , 刘庆 , 等 . 基于奇偶模分析法的四模谐振器结构的双通带带通滤波器设计 [J ] . 电子学报 , 2018 , 46 ( 2 ): 387 - 392 .

Zhang Dewei , Wang Shuxing , Liu Qing , et al . The design of dual-band bandpass filter using novel quadruple-mode resonator based on odd-and even-mode method [J ] . Acta Electronica Sinica , 2018 , 46 ( 2 ): 387 - 392 . (in Chinese)

刘唤 , 李郴 , 蔡捷玎 , 等 . 6G(B5G)毫米波通信用高选择性低损耗小型化LTCC滤波器设计与测试方法 [J ] . 电子学报 , 2025 , 53 ( 9 ): 3223 - 3232 .

Liu Huan , Li Chen , Cai Jieding , et al . Design and testing method of a miniaturized LTCC filter with high-selectivity and low-loss for 6G (B5G) millimeter-wave communication [J ] . Acta Electronica Sinica , 2025 , 53 ( 9 ): 3223 - 3232 . (in Chinese)

褚瑞 , 周亮 , 毛军发 . 一种新型双环双模带通滤波器 [J ] . 电子学报 , 2010 , 38 ( 3 ): 668 - 671 .

Chu Rui , Zhou Liang , Mao Junfa . A novel double loop dual-mode bandpass filter [J ] . Acta Electronica Sinica , 2010 , 38 ( 3 ): 668 - 671 . (in Chinese)

周春霞 , 夏侯海 , 季鲁 , 等 . 双模方形带通滤波器的分析、建模及设计 [J ] . 电子学报 , 2011 , 39 ( 6 ): 1364 - 1367 .

Zhou Chunxia , Xia Houhai , Ji Lu , et al . Analysis, modeling and design of quadrate dual-mode bandpass filters [J ] . Acta Electronica Sinica , 2011 , 39 ( 6 ): 1364 - 1367 . (in Chinese)

Zhang Jun , Xu Jinxu , Yao Cong , et al . Miniaturized high-selectivity high-resistivity-silicon IPD bandpass filter based on multiple transmission paths [J ] . IEEE Electron Device Letters , 2024 , 45 ( 4 ): 534 - 537 . DOI: 10.1109/led.2024.3364692 http://dx.doi.org/10.1109/led.2024.3364692

Jiang Yan , Feng Linping , Zhu Haoshen , et al . Bandpass filter with ultra-wide upper stopband on GaAs IPD technology [J ] . IEEE Transactions on Circuits and Systems II: Express Briefs , 2022 , 69 ( 2 ): 389 - 393 . DOI: 10.1109/tcsii.2021.3096936 http://dx.doi.org/10.1109/tcsii.2021.3096936

Zhang Xuejuan , Zhang Wenjuan , Sun Liguo , et al . A compact UWB BPF design using silicon-based IPD technology [C ] // ISAPE2012 . Piscataway : IEEE , 2012 : 1245 - 1247 .

Zheng Yan , Tian Hanyu , Dong Yuandan . Design of miniaturized and highly selective on-chip BPFs with mixed-coupled resonators [J ] . IEEE Microwave and Wireless Technology Letters , 2024 , 34 ( 11 ): 1235 - 1238 .

Kim Y S , Kang B G , Shin O C , et al . High out of band rejection BPF for GPS applications using aluminum integrated passive device technology [C ] // Asia-Pacific Microwave Conference 2011 . Piscataway : IEEE , 2011 : 421 - 424 . DOI: 10.1109/mwsym.2010.5516272 http://dx.doi.org/10.1109/mwsym.2010.5516272

Wang Guanhao , Wei Yuchen , Wang Cong , et al . A compact bandpass filter design based on GaAs IPD technology [C ] // 2022 IEEE MTT-S International Wireless Symposium . Piscataway : IEEE , 2022 : 1 - 3 . DOI: 10.1109/iws55252.2022.9977508 http://dx.doi.org/10.1109/iws55252.2022.9977508

Gu Lin , Zhou Xinyu , Dong Yuandan . Miniaturized IPD filter with multiple flexible transmission zeros and high attenuation [J ] . IEEE Microwave and Wireless Technology Letters , 2025 , 35 ( 7 ): 989 - 992 . DOI: 10.1109/lmwt.2025.3561157 http://dx.doi.org/10.1109/lmwt.2025.3561157

Xu Yao , Wu Yongle , Wu Haopeng , et al . Wideband high selectivity filter chips with adjustable bandwidth based on IPD technology [J ] . IEEE Transactions on Circuits and Systems II: Express Briefs , 2022 , 69 ( 11 ): 4273 - 4277 .

Zhang Jun , Xu Jinxu , Xia Yu , et al . Miniaturized high-selectivity bandpass filter with wide stopband based on through-glass-via IPD technology [J ] . IEEE Electron Device Letters , 2024 , 45 ( 8 ): 1536 - 1539 .

Chen Weijuan , Wu Yongle , Yang Yuhao , et al . IPD-based miniaturized wideband bandpass filter with frequency-dependent complex source and load [J ] . IEEE Transactions on Plasma Science , 2021 , 49 ( 3 ): 1115 - 1120 . DOI: 10.1109/tps.2021.3060111 http://dx.doi.org/10.1109/tps.2021.3060111

Yu Huiting , Wu Yongle , Yang Yuhao , et al . IPD millimeter-wave bandpass filter chip based on stepped-impedance coupled-line dual-mode resonator for 5G application [J ] . IEEE Transactions on Circuits and Systems II: Express Briefs , 2022 , 69 ( 12 ): 4744 - 4748 .

Zhang Gang , Yuan Chenyang , Ni Jinxuan , et al . Wideband on-chip bandpass filter in GaAs IPD technology with high frequency selectivity [J ] . IEEE Electron Device Letters , 2025 , 46 ( 1 ): 32 - 35 . DOI: 10.1109/led.2024.3505198 http://dx.doi.org/10.1109/led.2024.3505198

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