PDF(5832 KB)
Photonic Crystal with Electro-optic Polymer Defect for a Pulse Electric Field Sensor
LI Xian-li, WANG Dong-dong, LI Xiang-long, ZHAO Xiao-qing, ZHANG Hang, ZHANG Qi, JIANG Yun-feng
ACTA ELECTRONICA SINICA ›› 2021, Vol. 49 ›› Issue (9) : 1691-1700.
PDF(5832 KB)
PDF(5832 KB)
Photonic Crystal with Electro-optic Polymer Defect for a Pulse Electric Field Sensor
As for the measurement requirements of the pulse electric field with high intensity, wide frequency band and short duration, an all-dielectric electric field sensor based on photonic crystal with electro-optic polymer defect was proposed in this paper. The electro-optic polymer in the form of a defect layer was inserted in the periodic one-dimensional photonic crystal structure. The variations of refractive index of electro-optic polymer under the externally applied electric fields may induce the changes of the resonance wavelength of the defect mode. Accordingly, the applied electric field may be measured by monitoring the shift of the resonant wavelength. It is theoretically shown that the minimal detectable electric field of 30V/m can be achieved and the maximum detectable field could reach up to the order of MV/m.
electromagnetic pulse measurement / photonic crystal / optical sensor {{custom_keyword}} /
表1 光子晶体的结构参数不同时，对应的谐振谱半带宽、透过率和波长偏移灵敏度 |
| 序号 | 介质折射率 | 周期数N | 半带宽（pm） | 谐振峰透过率 | Δλ/Eex （pm/（MV/m）） |
|---|---|---|---|---|---|
| 1 | n A=4.1，nB=1.38，nC=2.0 | 3 | 400 | 1 | 389 |
| n A=4.1，nB=1.38，nC=2.0 | 4 | 50 | 1 | 389 | |
| n A=4.1，nB=1.38，nC=2.0 | 5 | 5 | 1 | 389 | |
| n A=4.1，nB=1.38，nC=2.0 | 6 | 0.5 | 1 | 389 | |
| n A=4.1，nB=1.38，nC=2.0 | 7 | 0.1 | 1 | 389 | |
| 2 | n A=4.1，nB=1.38，nC=2.0 | 3 | 400 | 1 | 389 |
| n A=3.48，nB=1.38，nC=2.0 | 3 | 900 | 1 | 370 | |
| n A=2.6，nB=1.45，nC=2.0 | 3 | 6000 | 1 | 305 | |
| 3 | n A=2.6，nB=1.45，nC=2.0 | N L=4，NR=3 | 4000 | 0.7 | — |
| n A=2.6，nB=1.45，nC=2.0 | N L=5，NR=3 | 3000 | 0.32 | — | |
| n A=2.6，nB=1.45，nC=2.0 | N L=6，NR=3 | 3000 | 0.12 | — | |
| n A=2.6，nB=1.45，nC=2.0 | N L=7，NR=3 | 2500 | 0.04 | — | |
| 4 | nA=3.48，nB=1.38，nC=1.4 | 4 | 160 | 1 | 438 |
| n A=3.48，nB=1.38，nC=1.6 | 4 | 155 | 1 | 413 | |
| n A=3.48，nB=1.38，nC=1.8 | 4 | 145 | 1 | 390 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 140 | 1 | 370 | |
| n A=3.48，nB=1.38，nC=2.2 | 4 | 125 | 1 | 353 | |
| 5 | n A=4.1，nB=1.38， nC=1.4 | 7 | 0.1 | 1 | 463 |
表2 入射角度不同时，TE模和TM模对应的谐振谱半带宽、透过率和波长偏移灵敏度 |
| 特征模 | 介质折射率 | 周期数 | 入射角度 | B/pm | 中心波长/nm | 消光比 | Δλ/Eex/ （pm/（MV/m）） |
|---|---|---|---|---|---|---|---|
| TE模 | n A=3.48，nB=1.38，nC=2.0 | 4 | 0 | 140 | 1550 | 1 | 387 |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 20 | 110 | 1519.74 | 1 | 382 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 40 | 50 | 1439.5 | 1 | 425 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 60 | 15 | 1341.6 | 1 | 481 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 70 | 7.5 | 1300.53 | 1 | 510 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 75 | 5 | 1284.75 | 1 | 518 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 80 | 3 | 1273 | 1 | 526 | |
| TM模 | n A=3.48，nB=1.38，nC=2.0 | 4 | 0 | 140 | 1550 | 1 | 387 |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 20 | 160 | 1519.73 | 1 | 370 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 40 | 350 | 1439.5 | 1 | 360 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 60 | 1100 | 1340.25 | 1 | 349 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 70 | 2400 | 1298 | 1 | 330 | |
| n A=3.48，nB=1.38，nC=2.0 | 4 | 80 | 5500 | 1268 | 1 | 322 |
| 1 |
张举丘, 梁志珊. 高空核爆电磁脉冲E2部分对架空管道的影响[J]. 电子学报, 2019, 47(8): 1762 - 1767.
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 2 |
刘钰, 韩峰, 陆希成, 等. 电子系统电磁脉冲易损性评估的分层贝叶斯网络模型[J]. 电子学报, 2016, 44(11): 2695 - 2703.
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 3 |
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 4 |
谢彦召, 孙蓓云, 周辉, 等. 地面附近的高空核爆电磁脉冲环境[J]. 强激光与粒子束, 2003, 15(7): 680 - 684.
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 5 |
吴克勤, 周炯, 徐得名, 等. 超快电磁脉冲辐射的产生与检测[J]. 电子学报, 1997, 25(9): 60 - 63.
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 6 |
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 7 |
任国斌, 王智, 娄淑琴, 等. 相移光纤布拉格光栅的光子晶体理论研究[J]. 电子学报, 2004, 32(3): 421 - 424.
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 8 |
方云团, 王誉雅, 夏景. 基于光学Parity-Time对称微腔结构的大范围电场传感器[J]. 物理学报, 2019, 68(19): 194201.
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 9 |
柏宁丰, 孙小菡. 基于耦合边界的紧凑型光子晶体定向耦合器的优化设计[J]. 电子学报, 2007, 35(2): 220 - 223.
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 10 |
于文兵, 田婕, 王英. 选择性填充光子晶体光纤应变特性研究[J]. 电子学报, 2016, 44(9): 2164 - 2167.
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 11 |
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| 12 |
{{custom_citation.content}}
{{custom_citation.annotation}}
|
| {{custom_ref.label}} |
{{custom_citation.content}}
{{custom_citation.annotation}}
|
PDF(5832 KB)
图1 电光聚合物缺陷光子晶体的电场传感器基本结构示意图图2 光子晶体的透射光谱(nA=3.48，nB=1.38，N=4)图3电场强度不同时透射光谱的变化图4 谐振中心波长偏移量与施加电场强度的标定曲线图5 波长-光强检测法图6 基元介质折射率不同时的透射谱曲线(nC=2.0, N=3)图7 周期数不同时的透射谱 (nA=2.6,nB=1.45)图8 缺陷层左右两侧介质的周期数不同时透射谱 (nA=2.6,nB=1.45)
表1 光子晶体的结构参数不同时，对应的谐振谱半带宽、透过率和波长偏移灵敏度图9 谐振峰透射中心波长随外加电场的变化(nA=4.1,nB=1.38, nC=1.4，N=7)图10 入射角度为60°时，TE模和TM模的传输光谱出现分离现象图11 入射角度不同时，TE模的传输光谱图12 入射角度不同时，TM模的传输光谱图表2 入射角度不同时，TE模和TM模对应的谐振谱半带宽、透过率和波长偏移灵敏度图13 光子晶体内部场强以及能流密度分布（A与B分别是为PbTe与MgF2，nA=4.1, nB=1.38）图14 基元介质折射率不同时的光子晶体内部场强以及能流密度分布(nC=2.0, N=3)
/
| 〈 |
|
〉 |
