Surface Potential Based E-mode p-GaN HEMT Device Model

Surface Potential Based E-mode p-GaN HEMT Device Model

GE Chen, LI Sheng, ZHANG Chi, LIU Si-yang, SUN Wei-feng

ACTA ELECTRONICA SINICA ›› 2022, Vol. 50 ›› Issue (5) : 1227-1233.

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ACTA ELECTRONICA SINICA ›› 2022, Vol. 50 ›› Issue (5) : 1227-1233. DOI: 10.12263/DZXB.20210737

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Surface Potential Based E-mode p-GaN HEMT Device Model

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2022, 50(5): 1227-1233. https://doi.org/10.12263/DZXB.20210737

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