Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs

JI Qi-zheng, LIU Jun, YANG Ming, MA Gui-lei, HU Xiao-feng, LIU Shang-he

ACTA ELECTRONICA SINICA ›› 2023, Vol. 51 ›› Issue (6) : 1486-1492.

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ACTA ELECTRONICA SINICA ›› 2023, Vol. 51 ›› Issue (6) : 1486-1492. DOI: 10.12263/DZXB.20230004
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Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2023, 51(6): 1486-1492. https://doi.org/10.12263/DZXB.20230004

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