High Quality GaN Epitaxy Based on Induced Nucleation Technology on Si Substrate

XU Kang, XU Sheng-rui, TAO Hong-chang, SU Hua-ke, GAO Yuan, YANG He, AN Xia, HUANG Jun, ZHANG Jin-cheng, HAO Yue

ACTA ELECTRONICA SINICA ›› 2024, Vol. 52 ›› Issue (12) : 3907-3913.

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ACTA ELECTRONICA SINICA ›› 2024, Vol. 52 ›› Issue (12) : 3907-3913. DOI: 10.12263/DZXB.20240662
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High Quality GaN Epitaxy Based on Induced Nucleation Technology on Si Substrate

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 52(12): 3907-3913. https://doi.org/10.12263/DZXB.20240662

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