A 2-D Analytical Potential Model for the Oxide Layer and Space Charge Region of MOSFETs in Subthreshold

doi:10.3969/j.issn.0372-2112.2013.11.019

HAN Ming-jun, KE Dao-ming, WANG Bao-tong, WANG Min, XU Chun-xia

ACTA ELECTRONICA SINICA ›› 2013, Vol. 41 ›› Issue (11) : 2237-2241.

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ACTA ELECTRONICA SINICA ›› 2013, Vol. 41 ›› Issue (11) : 2237-2241. DOI: 10.3969/j.issn.0372-2112.2013.11.019

A 2-D Analytical Potential Model for the Oxide Layer and Space Charge Region of MOSFETs in Subthreshold

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2013, 41(11): 2237-2241. https://doi.org/10.3969/j.issn.0372-2112.2013.11.019

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Received	Revised	Published
2012-11-28	2013-04-11	2013-11-25
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2013-11-25

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