A 2-D Potential Sub-Threshold Model for Sub-45nm MOSFETs with Ultra Shallow Junctions

HAN Ming-jun, KE Dao-ming

ACTA ELECTRONICA SINICA ›› 2015, Vol. 43 ›› Issue (1) : 94-98.

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ACTA ELECTRONICA SINICA ›› 2015, Vol. 43 ›› Issue (1) : 94-98. DOI: 10.3969/j.issn.0372-2112.2015.01.015

A 2-D Potential Sub-Threshold Model for Sub-45nm MOSFETs with Ultra Shallow Junctions

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2015, 43(1): 94-98. https://doi.org/10.3969/j.issn.0372-2112.2015.01.015

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