A 2-D Potential Sub-Threshold Model for Sub-45nm MOSFETs with Ultra Shallow Junctions

doi:10.3969/j.issn.0372-2112.2015.01.015

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Acta Electronica Sinica ›› 2015, Vol. 43 ›› Issue (1) : 94-98. DOI: 10.3969/j.issn.0372-2112.2015.01.015

A 2-D Potential Sub-Threshold Model for Sub-45nm MOSFETs with Ultra Shallow Junctions

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2015, 43(1): 94-98 https://doi.org/10.3969/j.issn.0372-2112.2015.01.015

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Received	Revised	Published
2013-09-18	2014-01-20	2015-01-25
Issue Date
2015-01-25

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