The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress

HUANG Yu, LIU Si-yang, GU Chun-de, MA Rong-jing, SUN Wei-feng

ACTA ELECTRONICA SINICA ›› 2016, Vol. 44 ›› Issue (1) : 130-134.

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ACTA ELECTRONICA SINICA ›› 2016, Vol. 44 ›› Issue (1) : 130-134. DOI: 10.3969/j.issn.0372-2112.2016.01.019

The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2016, 44(1): 130-134. https://doi.org/10.3969/j.issn.0372-2112.2016.01.019

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