Investigation on the Hot-Carrier-Induced Degradation for 1.8V pMOS Under Different Gate Voltage Stresses

LIU Si-yang, YU Chao-hui, ZHANG Chun-wei, SUN Wei-feng, SU Wei, ZHANG Ai-jun, LIU Yu-wei, WU Shi-li, HE Xiao-wei

ACTA ELECTRONICA SINICA ›› 2016, Vol. 44 ›› Issue (2) : 348-352.

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ACTA ELECTRONICA SINICA ›› 2016, Vol. 44 ›› Issue (2) : 348-352. DOI: 10.3969/j.issn.0372-2112.2016.02.015

Investigation on the Hot-Carrier-Induced Degradation for 1.8V pMOS Under Different Gate Voltage Stresses

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2016, 44(2): 348-352. https://doi.org/10.3969/j.issn.0372-2112.2016.02.015

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