A Research of Two Kinds of Mechanism and Performance Improvement of Resistive Switching Access Memory

WANG Wei, CHEN Jin, YU Lin-feng, XUE Qun-hu, YANG Chun-li

ACTA ELECTRONICA SINICA ›› 2017, Vol. 45 ›› Issue (4) : 989-999.

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ACTA ELECTRONICA SINICA ›› 2017, Vol. 45 ›› Issue (4) : 989-999. DOI: 10.3969/j.issn.0372-2112.2017.04.031

A Research of Two Kinds of Mechanism and Performance Improvement of Resistive Switching Access Memory

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2017, 45(4): 989-999. https://doi.org/10.3969/j.issn.0372-2112.2017.04.031

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