Improvement of HfO<sub>2</sub>/Ge Interface Properties by Using YON Interfacial Passivation Layer

doi:10.3969/j.issn.0372-2112.2017.11.031

Improvement of HfO₂/Ge Interface Properties by Using YON Interfacial Passivation Layer

CHENG Zhi-Xiang, XU Qin, LIU Lu

Acta Electronica Sinica ›› 2017, Vol. 45 ›› Issue (11) : 2810-2814.

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Acta Electronica Sinica ›› 2017, Vol. 45 ›› Issue (11) : 2810-2814. DOI: 10.3969/j.issn.0372-2112.2017.11.031

Improvement of HfO₂/Ge Interface Properties by Using YON Interfacial Passivation Layer

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2017, 45(11): 2810-2814 https://doi.org/10.3969/j.issn.0372-2112.2017.11.031

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Received	Revised	Published
2016-09-05	2016-11-15	2017-11-25
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2017-11-25

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