A Compact Large-Signal Model Topology for GaN High Electron Mobility Transistors

doi:10.3969/j.issn.0372-2112.2018.02.033

HAN Ke-feng, JIANG Hao, QIN Gui-xia, KONG Yue-chan

Acta Electronica Sinica ›› 2018, Vol. 46 ›› Issue (2) : 501-506.

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Acta Electronica Sinica ›› 2018, Vol. 46 ›› Issue (2) : 501-506. DOI: 10.3969/j.issn.0372-2112.2018.02.033

A Compact Large-Signal Model Topology for GaN High Electron Mobility Transistors

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2018, 46(2): 501-506 https://doi.org/10.3969/j.issn.0372-2112.2018.02.033

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Received	Revised	Published
2016-12-12	2017-07-15	2018-02-25
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2018-02-25

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