Effect of Channel Width on NBTI in 65nm PMOSFET

CUI Jiang-wei, ZHENG Qi-wen, YU De-zhao, ZHOU Hang, SU Dan-dan, MA Teng, WEI Ying, YU Xue-feng, GUO Qi

ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (5) : 1128-1132.

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ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (5) : 1128-1132. DOI: 10.3969/j.issn.0372-2112.2018.05.016

Effect of Channel Width on NBTI in 65nm PMOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2018, 46(5): 1128-1132. https://doi.org/10.3969/j.issn.0372-2112.2018.05.016

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