A Dual-Trench-Gate Silicon on Insulator Device with a L-shaped Gate Field Plate

DAI Hong-li, ZHAO Hong-dong, WANG Luo-xin, SHI Yan-mei, LI Ming-ji

ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (5) : 1146-1152.

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ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (5) : 1146-1152. DOI: 10.3969/j.issn.0372-2112.2018.05.019

A Dual-Trench-Gate Silicon on Insulator Device with a L-shaped Gate Field Plate

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2018, 46(5): 1146-1152. https://doi.org/10.3969/j.issn.0372-2112.2018.05.019

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