A Dual-Trench-Gate Silicon on Insulator Device with a L-shaped Gate Field Plate

DAI Hong-li, ZHAO Hong-dong, WANG Luo-xin, SHI Yan-mei, LI Ming-ji

Acta Electronica Sinica ›› 2018, Vol. 46 ›› Issue (5) : 1146-1152.

PDF(1587 KB)
CIE Homepage  |  Join CIE  |  Login CIE  |  中文 
PDF(1587 KB)
Acta Electronica Sinica ›› 2018, Vol. 46 ›› Issue (5) : 1146-1152. DOI: 10.3969/j.issn.0372-2112.2018.05.019

A Dual-Trench-Gate Silicon on Insulator Device with a L-shaped Gate Field Plate

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2018, 46(5): 1146-1152 https://doi.org/10.3969/j.issn.0372-2112.2018.05.019

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(1587 KB)

Accesses

Citation

Detail
Sections
Recommended
Copyright © Acta Electronica Sinica, All Rights Reserved.
Tel: 010-68600735　
E-mail：new@ejournal.org.cn
Powered by Beijing Magtech Co. Ltd,.
Copyright © Acta Electronica Sinica, All Rights Reserved.

/

〈 〉