Novel SOI LDMOS with Step Width Drift Region Using High-k Dielectric

YAO Jia-fei, GUO Yu-feng, LI Man, WANG Zi-xuan, HU Shan-wen, XIA Tian

ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (7) : 1781-1786.

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ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (7) : 1781-1786. DOI: 10.3969/j.issn.0372-2112.2018.07.035

Novel SOI LDMOS with Step Width Drift Region Using High-k Dielectric

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2018, 46(7): 1781-1786. https://doi.org/10.3969/j.issn.0372-2112.2018.07.035

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