1.2kV 4H-SiC DMOSFET with Phosphorous Passivated Gate Dielectric

LIU Jia-jia, LIU Ying-kun, TAN Yong-liang, ZHANG Li-jiang, CUI Yu-xing

ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (8) : 2026-2029.

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ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (8) : 2026-2029. DOI: 10.3969/j.issn.0372-2112.2018.08.031

1.2kV 4H-SiC DMOSFET with Phosphorous Passivated Gate Dielectric

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2018, 46(8): 2026-2029. https://doi.org/10.3969/j.issn.0372-2112.2018.08.031

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