ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor

LU Dai, WANG Wen-jie, WANG Qing-zhen, YU Ping-ping, JIANG Yan-feng

Acta Electronica Sinica ›› 2019, Vol. 47 ›› Issue (2) : 434-439.

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Acta Electronica Sinica ›› 2019, Vol. 47 ›› Issue (2) : 434-439. DOI: 10.3969/j.issn.0372-2112.2019.02.025

ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2019, 47(2): 434-439 https://doi.org/10.3969/j.issn.0372-2112.2019.02.025

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