Failure Models and Comparison on Short-Circuit Performances for SiC JFET and SiC MOSFET

doi:10.3969/j.issn.0372-2112.2019.03.030

ZHOU Yu-ming, LIU Hang-zhi, YANG Ting-ting, CHEN Zhao-quan

ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (3) : 726-733.

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ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (3) : 726-733. DOI: 10.3969/j.issn.0372-2112.2019.03.030

Failure Models and Comparison on Short-Circuit Performances for SiC JFET and SiC MOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2019, 47(3): 726-733. https://doi.org/10.3969/j.issn.0372-2112.2019.03.030

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Received	Revised	Published
2018-03-26	2018-08-13	2019-03-25
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2019-03-25

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