Effect of SiO2 Modification of Bi1.5Zn1.0Nb1.5O7 Gate Insulator on the Performance of ZnO-TFTs

YE Wei, CUI Li-kun, CHANG Hong-mei

ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (6) : 1344-1351.

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ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (6) : 1344-1351. DOI: 10.3969/j.issn.0372-2112.2019.06.023

Effect of SiO2 Modification of Bi1.5Zn1.0Nb1.5O7 Gate Insulator on the Performance of ZnO-TFTs

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2019, 47(6): 1344-1351. https://doi.org/10.3969/j.issn.0372-2112.2019.06.023

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