Research on Total Ionizing Dose Effect Simulation Technology of Silicon-on-Insulator Device Based on TCAD

PENG Chao, LEI Zhi-feng, ZHANG Zhan-gang, HE Yu-juan, HUANG Yun, EN Yun-fei

ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (8) : 1755-1761.

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ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (8) : 1755-1761. DOI: 10.3969/j.issn.0372-2112.2019.08.020

Research on Total Ionizing Dose Effect Simulation Technology of Silicon-on-Insulator Device Based on TCAD

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2019, 47(8): 1755-1761. https://doi.org/10.3969/j.issn.0372-2112.2019.08.020

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