The Electrical Mechanism Study of High-Ruggedness N-Channel RF-LDMOS Under TLP Stress

LI Hao, REN Jian-wei, DU Huan

ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (11) : 2317-2322.

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ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (11) : 2317-2322. DOI: 10.3969/j.issn.0372-2112.2019.11.012

The Electrical Mechanism Study of High-Ruggedness N-Channel RF-LDMOS Under TLP Stress

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2019, 47(11): 2317-2322. https://doi.org/10.3969/j.issn.0372-2112.2019.11.012

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