An Analytical Model of Threshold Voltage for the Asymmetrical Double-Material-Gate Strained Si HALO Doping Channel MOSFET

XIN Yan-hui, DUAN Mei-xia

ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (11) : 2432-2437.

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ACTA ELECTRONICA SINICA ›› 2019, Vol. 47 ›› Issue (11) : 2432-2437. DOI: 10.3969/j.issn.0372-2112.2019.11.027

An Analytical Model of Threshold Voltage for the Asymmetrical Double-Material-Gate Strained Si HALO Doping Channel MOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2019, 47(11): 2432-2437. https://doi.org/10.3969/j.issn.0372-2112.2019.11.027

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