Development of 1200V High Capacity SiC MOSFET Devices

LIU Xin-yu, LI Cheng-zhan, LUO Ye-hui, CHEN Hong, GAO Xiu-xiu, BAI Yun

ACTA ELECTRONICA SINICA ›› 2020, Vol. 48 ›› Issue (12) : 2313-2318.

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ACTA ELECTRONICA SINICA ›› 2020, Vol. 48 ›› Issue (12) : 2313-2318. DOI: 10.3969/j.issn.0372-2112.2020.12.004

Development of 1200V High Capacity SiC MOSFET Devices

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2020, 48(12): 2313-2318. https://doi.org/10.3969/j.issn.0372-2112.2020.12.004

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