Study on Nitridation-Induced Residual Stress near Si/SiO2 Interface in n-MOSFETs

XU Jing-Ping;LI Pei-tao;LI Bin

ACTA ELECTRONICA SINICA ›› 2000, Vol. 28 ›› Issue (2) : 49-51.

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ACTA ELECTRONICA SINICA ›› 2000, Vol. 28 ›› Issue (2) : 49-51.
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Study on Nitridation-Induced Residual Stress near Si/SiO2 Interface in n-MOSFETs

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2000, 28(2): 49-51.

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