The Influence of GeSi MOSFET Longitudinal Structure on Device Performance

The Influence of GeSi MOSFET Longitudinal Structure on Device Performance

DONG Zhi-wei;LI Chen;CHEN Pei-yi;Qian Pei-xin

ACTA ELECTRONICA SINICA ›› 2000, Vol. 28 ›› Issue (8) : 139-141.

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PDF(154 KB)

ACTA ELECTRONICA SINICA ›› 2000, Vol. 28 ›› Issue (8) : 139-141.

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The Influence of GeSi MOSFET Longitudinal Structure on Device Performance

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2000, 28(8): 139-141.

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