A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

WAN Xin-heng;ZHANG Xing;TAN Jing-rong;GAO Wen-yu;HUANG Ru;WANG Yang-yuan

ACTA ELECTRONICA SINICA ›› 2001, Vol. 29 ›› Issue (11) : 1519-1521.

PDF(225 KB)
CIE Homepage  |  Join CIE  |  Login CIE  |  中文 
PDF(225 KB)
ACTA ELECTRONICA SINICA ›› 2001, Vol. 29 ›› Issue (11) : 1519-1521.
论文

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2001, 29(11): 1519-1521.

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(225 KB)

Accesses

Citation

Detail
Sections
Recommended
Copyright © ACTA ELECTRONICA SINICA, All Rights Reserved.
E-mail：new@ejournal.org.cn
Powered by Beijing Magtech Co. Ltd,.
Copyright © ACTA ELECTRONICA SINICA, All Rights Reserved.

/

〈 〉